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U.S. Department of Energy
Office of Scientific and Technical Information

SiGe Growth on Strained Silicon-on-Insulator en route to STM-based Device Fabrication.

Conference ·
OSTI ID:1326576
Abstract not provided.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1326576
Report Number(s):
SAND2015-8104C; 603970
Country of Publication:
United States
Language:
English

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