Identification of lifetime limiting defects by temperature- and injection-dependent photoluminescence imaging

Schön, Jonas; Youssef, Amanda; Park, Sungeun; Mundt, Laura E.; Niewelt, Tim; Mack, Sebastian; Nakajima, Kazuo; Morishita, Kohei; Murai, Ryota; Jensen, Mallory A.; Buonassisi, Tonio; Schubert, Martin C.

doi:10.1063/1.4961465

Title: Identification of lifetime limiting defects by temperature- and injection-dependent photoluminescence imaging

Journal Article · Thu Sep 08 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4961465· OSTI ID:1322422

Schön, Jonas ^[1]; Youssef, Amanda ^[2]; Park, Sungeun ^[3]; Mundt, Laura E. ^[1]; Niewelt, Tim ^[1]; Mack, Sebastian ^[1]; Nakajima, Kazuo ^[4]; Morishita, Kohei ^[5]; Murai, Ryota ^[4]; Jensen, Mallory A. ^[2]; Buonassisi, Tonio ^[2]; Schubert, Martin C. ^[1]

Fraunhofer Institute for Solar Energy Systems, Heidenhofstraβe 2, D-79110 Freiburg, Germany
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 136-713, South Korea
FUTURE-PV Innovation, Koriyama, Fukushima 963-0215, Japan
Kyoto University, Yoshida-Honmachi, Sakyo-Ku, Kyoto 606-8501, Japan

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Sponsoring Organization:: USDOE

OSTI ID:: 1322422

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 120 Journal Issue: 10; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 20 works

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References (13)

Imaging of chromium point defects in p-type silicon Habenicht, Holger; Schubert, Martin C.; Warta, Wilhelm Journal of Applied Physics, Vol. 108, Issue 3 https://doi.org/10.1063/1.3459892	journal	August 2010
Detecting efficiency-limiting defects in Czochralski-grown silicon wafers in solar cell production using photoluminescence imaging Haunschild, Jonas; Reis, Isolde E.; Geilker, Juliane physica status solidi (RRL) - Rapid Research Letters, Vol. 5, Issue 5-6 https://doi.org/10.1002/pssr.201105183	journal	May 2011
Minority-carrier lifetime and defect content of n-type silicon grown by the noncontact crucible method Kivambe, Maulid; Powell, Douglas M.; Castellanos, Sergio Journal of Crystal Growth, Vol. 407 https://doi.org/10.1016/j.jcrysgro.2014.08.021	journal	December 2014
Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence Macdonald, D.; Tan, J.; Trupke, T. Journal of Applied Physics, Vol. 103, Issue 7 https://doi.org/10.1063/1.2903895	journal	April 2008
Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon Murphy, J. D.; Bothe, K.; Krain, R. Journal of Applied Physics, Vol. 111, Issue 11 https://doi.org/10.1063/1.4725475	journal	June 2012
Imaging of Metastable Defects in Silicon Schubert, Martin C.; Habenicht, Holger; Warta, Wilhelm IEEE Journal of Photovoltaics, Vol. 1, Issue 2 https://doi.org/10.1109/JPHOTOV.2011.2169942	journal	October 2011
Rapid Thermal Processing and the Control of Oxygen Precipitation Behaviour in Silicon Wafers Falster, Robert J.; Voronkov, Vladimir V. Materials Science Forum, Vol. 573-574 https://doi.org/10.4028/www.scientific.net/MSF.573-574.45	journal	March 2008
On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing Falster, R.; Voronkov, V. V.; Quast, F. physica status solidi (b), Vol. 222, Issue 1 https://doi.org/10.1002/1521-3951(200011)222:1<219::AID-PSSB219>3.0.CO;2-U	journal	November 2000
Growth of Si Bulk Crystals with Large Diameter Ratio Using Small Crucibles by Creating a Large Low-Temperature Region Inside a Si Melt Contained in an NOC Furnace Developed Using Two Zone Heaters Nakajima, Kazuo; Ono, Satoshi; Murai, Ryota Journal of Electronic Materials, Vol. 45, Issue 6 https://doi.org/10.1007/s11664-016-4463-z	journal	March 2016
Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation Murphy, J. D.; McGuire, R. E.; Bothe, K. Solar Energy Materials and Solar Cells, Vol. 120 https://doi.org/10.1016/j.solmat.2013.06.018	journal	January 2014
Improved quantitative description of Auger recombination in crystalline silicon Richter, Armin; Glunz, Stefan W.; Werner, Florian Physical Review B, Vol. 86, Issue 16 https://doi.org/10.1103/PhysRevB.86.165202	journal	October 2012
Lifetime spectroscopy for defect characterization: Systematic analysis of the possibilities and restrictions Rein, S.; Rehrl, T.; Warta, W. Journal of Applied Physics, Vol. 91, Issue 4 https://doi.org/10.1063/1.1428095	journal	February 2002
Shape and quality of Si single bulk crystals grown inside Si melts using the noncontact crucible method Nakajima, Kazuo; Murai, Ryota; Ono, Satoshi Japanese Journal of Applied Physics, Vol. 54, Issue 1 https://doi.org/10.7567/JJAP.54.015504	journal	December 2014

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