Harsh Environment Silicon Carbide Sensor Technology for Geothermal Instrumentation
Technical Report
·
OSTI ID:1319620
- Univ. of California, Berkeley, CA (United States); UCSD Jacobs School of Engineering
This project utilizes Silicon Carbide (SiC) materials platform to fabricate advanced sensors to be used as high-temperature downhole instrumentation for the DOE’s Geothermal Technologies Program on Enhanced Geothermal Systems. The scope of the proposed research is to 1) develop a SiC pressure sensor that can operate in harsh supercritical conditions, 2) develop a SiC temperature sensor that can operate in harsh supercritical conditions, 3) develop a bonding process for adhering SiC sensor die to well casing couplers, and 4) perform experimental exposure testing of sensor materials and the sensor devices.
- Research Organization:
- Univ. of California, Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- EE0002753
- OSTI ID:
- 1319620
- Country of Publication:
- United States
- Language:
- English
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