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Title: Highly oxidized graphene oxide and methods for production thereof

Abstract

A highly oxidized form of graphene oxide and methods for production thereof are described in various embodiments of the present disclosure. In general, the methods include mixing a graphite source with a solution containing at least one oxidant and at least one protecting agent and then oxidizing the graphite source with the at least one oxidant in the presence of the at least one protecting agent to form the graphene oxide. Graphene oxide synthesized by the presently described methods is of a high structural quality that is more oxidized and maintains a higher proportion of aromatic rings and aromatic domains than does graphene oxide prepared in the absence of at least one protecting agent. Methods for reduction of graphene oxide into chemically converted graphene are also disclosed herein. The chemically converted graphene of the present disclosure is significantly more electrically conductive than is chemically converted graphene prepared from other sources of graphene oxide.

Inventors:
;
Publication Date:
Research Org.:
WILLIAM MARSH RICE UNIVERSITY, Houston, TX (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1312733
Patent Number(s):
9,428,394
Application Number:
13/321,623
Assignee:
WILLIAM MARSH RICE UNIVERSITY (Houston, TX) GFO
DOE Contract Number:
FC36-05GO15073
Resource Type:
Patent
Resource Relation:
Patent File Date: 2010 May 14
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Tour, James M., and Kosynkin, Dmitry V. Highly oxidized graphene oxide and methods for production thereof. United States: N. p., 2016. Web.
Tour, James M., & Kosynkin, Dmitry V. Highly oxidized graphene oxide and methods for production thereof. United States.
Tour, James M., and Kosynkin, Dmitry V. 2016. "Highly oxidized graphene oxide and methods for production thereof". United States. doi:. https://www.osti.gov/servlets/purl/1312733.
@article{osti_1312733,
title = {Highly oxidized graphene oxide and methods for production thereof},
author = {Tour, James M. and Kosynkin, Dmitry V.},
abstractNote = {A highly oxidized form of graphene oxide and methods for production thereof are described in various embodiments of the present disclosure. In general, the methods include mixing a graphite source with a solution containing at least one oxidant and at least one protecting agent and then oxidizing the graphite source with the at least one oxidant in the presence of the at least one protecting agent to form the graphene oxide. Graphene oxide synthesized by the presently described methods is of a high structural quality that is more oxidized and maintains a higher proportion of aromatic rings and aromatic domains than does graphene oxide prepared in the absence of at least one protecting agent. Methods for reduction of graphene oxide into chemically converted graphene are also disclosed herein. The chemically converted graphene of the present disclosure is significantly more electrically conductive than is chemically converted graphene prepared from other sources of graphene oxide.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2016,
month = 8
}

Patent:

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  • Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or othermore » opto-electronic properties.« less
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  • In one embodiment, a melt-castable energetic material comprises at least one of: 3,5-bis(4-nitro-1,2,5-oxadiazol-3-yl)-1,2,4-oxadiazole (DNFO), and 3-(4-amino-1,2,5-oxadiazol-3-yl)-5-(4-nitro-1,2,5-oxadiazol-3-yl)-1,2- ,4-oxadiazole (ANFO). In another embodiment, a method for forming a melt-castable energetic material includes reacting 3,5-bis(4-amino-1,2,5-oxadiazol-3-yl)-1,2,4-oxadiazole (DAFO) with oxygen or an oxygen-containing compound to form a mixture of at least: DNFO, and ANFO.
  • In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memorymore » applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.« less