Synthesis of Freestanding Single-crystal Perovskite Films and Heterostructures by Etching of Sacrificial Water-soluble Layers

Technical Report · Mon Aug 22 04:00:00 EDT 2016

DOI:https://doi.org/10.2172/1310026· OSTI ID:1310026

Lu, Di ^[1]; Baek, David J. ^[2]; Hong, Seung Sae ^[3]; Kourkoutis, Lena F. ^[4]; Hikita, Yasuyuki ^[5]; Hwang, Harold Y. ^[3]

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1. Stanford Univ., CA (United States). Dept. of Physics; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences
2. Cornell Univ., Ithaca, NY (United States). School of Electrical and Computer Engineering
3. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences; Stanford Univ., CA (United States). Dept. of Applied Physics
4. Cornell Univ., Ithaca, NY (United States). School of Applied and Engineering Physics; Cornell Univ., Ithaca, NY (United States). Kavli Inst. at Cornell for Nanoscale Science
5. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences

The ability to create and manipulate materials in two-dimensional (2D) form has repeatedly had transformative impact on science and technology. In parallel with the exfoliation and stacking of intrinsically layered crystals, atomic-scale thin film growth of complex materials has enabled the creation of artificial 2D heterostructures with novel functionality and emergent phenomena, as seen in perovskite heterostructures. However, separation of these layers from the growth substrate has proven challenging, limiting the manipulation capabilities of these heterostructures with respect to exfoliated materials. Here we present a general method to create freestanding perovskite membranes. The key is the epitaxial growth of water-soluble Sr₃Al₂O₆ on perovskite substrates, followed by in situ growth of films and heterostructures. Millimetre-size single-crystalline membranes are produced by etching the Sr₃Al₂O₆ layer in water, providing the opportunity to transfer them to arbitrary substrates and integrate them with heterostructures of semiconductors and layered compounds.

• Research Organization: SLAC National Accelerator Laboratory (SLAC)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); Gordon and Betty Moore Foundation (United States); National Science Foundation (NSF) (United States)
• DOE Contract Number: AC02-76SF00515
• OSTI ID: 1310026
• Report Number(s): SLAC-PUB-16802
• Country of Publication: United States
• Language: English

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