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Title: Low profile, highly configurable, current sharing paralleled wide band gap power device power module

Abstract

A power module with multiple equalized parallel power paths supporting multiple parallel bare die power devices constructed with low inductance equalized current paths for even current sharing and clean switching events. Wide low profile power contacts provide low inductance, short current paths, and large conductor cross section area provides for massive current carrying. An internal gate & source kelvin interconnection substrate is provided with individual ballast resistors and simple bolted construction. Gate drive connectors are provided on either left or right size of the module. The module is configurable as half bridge, full bridge, common source, and common drain topologies.

Inventors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Cree Fayetteville, Inc. Fayetteville, AR (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1303252
Patent Number(s):
9,426,883
Application Number:
14/609,629
Assignee:
Cree Fayetteville, Inc. (Fayetteville, AR) DOEEE
DOE Contract Number:
EE0006429
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Jan 30
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 24 POWER TRANSMISSION AND DISTRIBUTION

Citation Formats

McPherson, Brice, Killeen, Peter D., Lostetter, Alex, Shaw, Robert, Passmore, Brandon, Hornberger, Jared, and Berry, Tony M. Low profile, highly configurable, current sharing paralleled wide band gap power device power module. United States: N. p., 2016. Web.
McPherson, Brice, Killeen, Peter D., Lostetter, Alex, Shaw, Robert, Passmore, Brandon, Hornberger, Jared, & Berry, Tony M. Low profile, highly configurable, current sharing paralleled wide band gap power device power module. United States.
McPherson, Brice, Killeen, Peter D., Lostetter, Alex, Shaw, Robert, Passmore, Brandon, Hornberger, Jared, and Berry, Tony M. Tue . "Low profile, highly configurable, current sharing paralleled wide band gap power device power module". United States. doi:. https://www.osti.gov/servlets/purl/1303252.
@article{osti_1303252,
title = {Low profile, highly configurable, current sharing paralleled wide band gap power device power module},
author = {McPherson, Brice and Killeen, Peter D. and Lostetter, Alex and Shaw, Robert and Passmore, Brandon and Hornberger, Jared and Berry, Tony M},
abstractNote = {A power module with multiple equalized parallel power paths supporting multiple parallel bare die power devices constructed with low inductance equalized current paths for even current sharing and clean switching events. Wide low profile power contacts provide low inductance, short current paths, and large conductor cross section area provides for massive current carrying. An internal gate & source kelvin interconnection substrate is provided with individual ballast resistors and simple bolted construction. Gate drive connectors are provided on either left or right size of the module. The module is configurable as half bridge, full bridge, common source, and common drain topologies.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 23 00:00:00 EDT 2016},
month = {Tue Aug 23 00:00:00 EDT 2016}
}

Patent:

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  • The H{sub 2} dilution technique at a high deposition rate (R{sub D}) was investigated by depositing hydrogenated amorphous silicon (a-Si:H) under a high rf power density of 750 mW/cm{sup 2}, which is 20 times as large as that of conventional conditions. It was found that the H{sub 2} dilution ratio {gamma}(=[H{sub 2} gas flow rate]/[SiH{sub 4} gas flow rate]) tendency of the film properties, such as the H content (C{sub H}), optical gap (E{sub opt}), SiH{sub 2}/SiH and photoconductivity ({sigma}{sub ph}) of a-Si:H is different for the high rf power (750 mW/cm{sup 2}) and the medium rf power (75 mW/cm{supmore » 2}) conditions. Under medium rf power, the C{sub H}, E{sub opt} and SiH{sub 2}/SiH decrease as {gamma} increases. Under the high rf power, on the contrary, the C{sub H} and E{sub opt} monotonously increase while maintaining a low SiH{sub 2}/SiH and a high {sigma}{sub ph} of 10{sup {minus}6} S/cm as {gamma} increases. These results suggest that increasing the rf power enhances the H incorporation reactions due to H{sub 2} dilution. It is thought that a high rf power causes the depletion of SiH{sub 4} and hence the extinction of H radicals, expressed by SiH{sub 4} + H* {yields} SiH{sub 3}* + H{sub 2}, is suppressed. A high H radical density enhances the incorporation of H into a-Si:H, resulting in very wide-gap a-Si:H with a high C{sub H}. Consequently, very wide-gap a-Si:H with device-quality (E{sub opt} of 1.82 eV with an ({alpha}h{nu}){sup 1/3} plot, corresponding to > 2.1 eV with Tauc's plot, and {sigma}{sub ph} of 10{sup {minus}6} S/cm) can be obtained at a high R{sub D} of 12 {angstrom}/s without carbon alloying.« less
  • This invention relates to novel and comparatively inexpensive semiconductor devices utilizing semiconducting alkaline-earth-oxide crystals doped with alkali metal. The semiconducting crystals are produced by a simple and relatively inexpensive process. As a specific example, a high-purity lithium-doped MgO crystal is grown by conventional techniques. The crystal then is heated in an oxygen-containing atmosphere to form many [Li].degree. defects therein, and the resulting defect-rich hot crystal is promptly quenched to render the defects stable at room temperature and temperatures well above the same. Quenching can be effected conveniently by contacting the hot crystal with room-temperature air.
  • A method that combines alternate low/medium ion dose implantation with rapid thermal annealing at relatively low temperatures. At least one dopant is implanted in one of a single crystal and an epitaxial film of the wide band gap compound by a plurality of implantation cycles. The number of implantation cycles is sufficient to implant a predetermined concentration of the dopant in one of the single crystal and the epitaxial film. Each of the implantation cycles includes the steps of: implanting a portion of the predetermined concentration of the one dopant in one of the single crystal and the epitaxial film;more » annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time to repair damage to one of the single crystal and the epitaxial film caused by implantation and activates the implanted dopant; and cooling the annealed single crystal and implanted portion to a temperature of less than about 100.degree. C. This combination produces high concentrations of dopants, while minimizing the defect concentration.« less
  • The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.
  • This invention relates to novel and comparatively inexpensive semiconductor devices utilizing semiconducting alkaline-earth oxide crystals doped with alkali metal. The semiconducting crystals are produced by a simple and relatively inexpensive process. As a specific example, a high-purity lithium-doped MgO crystal is grown by conventional techniques. The crystal then is heated in an oxygen-containing atmosphere to form many (Li)* defects therein, and the resulting defect-rich hot crystal is promptly quenched to render the defects stable at room temperature and temperatures well above the same. Quenching can be effected conveniently by contacting the hot crystal with room temperature air.