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Engineered gate oxides for wide bandgap semiconductor MOSFETs.

Conference ·
OSTI ID:1294061
Abstract not provided.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1294061
Report Number(s):
SAND2012-7685C; 504927
Country of Publication:
United States
Language:
English

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