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Construction and characterization of a 117 cm{sup 2} silicon pixel detector

Journal Article · · IEEE Transactions on Nuclear Science
DOI:https://doi.org/10.1109/23.467810· OSTI ID:129159
A silicon pixel detector, developed in RD19, and consisting of 4 planes, {approximately}30 cm{sup 2} each, is operating for the first time in the lead ion experiment WA97 at CERN. The 288 CMOS readout chips are bump-bonded to 48 Si detector matrices, assembled in 8 identical arrays. The total number of pixel cells is nearly 300,000 and each cell, 75 {micro}m x 500 {micro}m, contains a complete signal processing chain. Overall dead area is less than 3%.
OSTI ID:
129159
Report Number(s):
CONF-941061--
Journal Information:
IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 4Pt1 Vol. 42; ISSN 0018-9499; ISSN IETNAE
Country of Publication:
United States
Language:
English

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