Ionic liquid versus SiO2 gated a-IGZO thin film transistors: A direct comparison

Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; Haglund, Amanda V.; Dai, Sheng; Ward, Thomas Zac; Mandrus, David; Rack, Philip D.

doi:10.1149/2.0141509jss

Title: Ionic liquid versus SiO₂ gated a-IGZO thin film transistors: A direct comparison

Journal Article · Wed Aug 12 00:00:00 EDT 2015 · ECS Journal of Solid State Science and Technology

DOI:https://doi.org/10.1149/2.0141509jss· OSTI ID:1286908

Pudasaini, Pushpa Raj ^[1]; Noh, Joo Hyon ^[1]; Wong, Anthony T. ^[2]; Haglund, Amanda V. ^[2]; Dai, Sheng ^[3]; Ward, Thomas Zac ^[3]; Mandrus, David ^[2]; Rack, Philip D. ^[2]

Univ. of Tennessee, Knoxville, TN (United States)
Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Here, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO₂ gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ~10⁵, a promising field effect mobility of 14.20 cm²V^–1s^–1, and a threshold voltage of 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm²V^–1s^–1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be “frozen-in” by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZO TFT “ON” and “OFF” state, respectively, which could lead to new switching and possibly non-volatile memory applications.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1286908

Journal Information:: ECS Journal of Solid State Science and Technology, Vol. 4, Issue 9; ISSN 2162-8769

Publisher:: Electrochemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 20 works

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References (32)

Ionic Liquids for Electrolyte-Gating of ZnO Field-Effect Transistors Thiemann, S.; Sachnov, S.; Porscha, S. The Journal of Physical Chemistry C, Vol. 116, Issue 25 https://doi.org/10.1021/jp3024233	journal	June 2012
Suppression of Ionic Liquid Gate-Induced Metallization of SrTiO ₃ (001) by Oxygen Li, Mingyang; Han, Wei; Jiang, Xin Nano Letters, Vol. 13, Issue 10 https://doi.org/10.1021/nl402088f	journal	September 2013
High-mobility, low-power, and fast-switching organic field-effect transistors with ionic liquids Ono, S.; Seki, S.; Hirahara, R. Applied Physics Letters, Vol. 92, Issue 10 https://doi.org/10.1063/1.2898203	journal	March 2008
High-Speed, Low-Voltage, and Environmentally Stable Operation of Electrochemically Gated Zinc Oxide Nanowire Field-Effect Transistors Nasr, Babak; Wang, Di; Kruk, Robert Advanced Functional Materials, Vol. 23, Issue 14 https://doi.org/10.1002/adfm.201202500	journal	November 2012
Liquid-gated interface superconductivity on an atomically flat film Ye, J. T.; Inoue, S.; Kobayashi, K. Nature Materials, Vol. 9, Issue 2 https://doi.org/10.1038/nmat2587	journal	November 2009
Electrolyte Gate-Controlled Kondo Effect in ${SrTiO}_{3}$ Lee, Menyoung; Williams, J. R.; Zhang, Sipei Physical Review Letters, Vol. 107, Issue 25 https://doi.org/10.1103/PhysRevLett.107.256601	journal	December 2011
High Mobility WSe ₂ p - and n - Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts Chuang, Hsun-Jen; Tan, Xuebin; Ghimire, Nirmal Jeevi Nano Letters, Vol. 14, Issue 6 https://doi.org/10.1021/nl501275p	journal	May 2014
High-performance organic field-effect transistors with binary ionic liquids Ono, S.; Miwa, K.; Seki, S. Organic Electronics, Vol. 10, Issue 8 https://doi.org/10.1016/j.orgel.2009.09.004	journal	December 2009
High transconductance organic electrochemical transistors Khodagholy, Dion; Rivnay, Jonathan; Sessolo, Michele Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms3133	journal	July 2013
Ionic liquids and catalysis: Recent progress from knowledge to applications Olivier-Bourbigou, H.; Magna, L.; Morvan, D. Applied Catalysis A: General, Vol. 373, Issue 1-2 https://doi.org/10.1016/j.apcata.2009.10.008	journal	January 2010
Transition Metal Nanoparticle Catalysis in Ionic Liquids Scholten, Jackson D.; Leal, Bárbara Caroline; Dupont, Jairton ACS Catalysis, Vol. 2, Issue 1 https://doi.org/10.1021/cs200525e	journal	December 2011
Ionic Liquids in Electrochemical Devices and Processes: Managing Interfacial Electrochemistry MacFarlane, Douglas R.; Forsyth, Maria; Howlett, Patrick C. Accounts of Chemical Research, Vol. 40, Issue 11 https://doi.org/10.1021/ar7000952	journal	November 2007
Suppression of Metal-Insulator Transition in VO2 by Electric Field-Induced Oxygen Vacancy Formation Jeong, J.; Aetukuri, N.; Graf, T. Science, Vol. 339, Issue 6126 https://doi.org/10.1126/science.1230512	journal	March 2013
Collective bulk carrier delocalization driven by electrostatic surface charge accumulation Nakano, M.; Shibuya, K.; Okuyama, D. Nature, Vol. 487, Issue 7408 https://doi.org/10.1038/nature11296	journal	July 2012
Electric-field-induced superconductivity at 9.4 K in a layered transition metal disulphide MoS ₂ Taniguchi, Kouji; Matsumoto, Akiyo; Shimotani, Hidekazu Applied Physics Letters, Vol. 101, Issue 4 https://doi.org/10.1063/1.4740268	journal	July 2012
Ionic liquid gating reveals trap-filled limit mobility in low temperature amorphous zinc oxide Bubel, S.; Meyer, S.; Kunze, F. Applied Physics Letters, Vol. 103, Issue 15 https://doi.org/10.1063/1.4824022	journal	October 2013
Electrolyte-gated polymer thin film transistors making use of ionic liquids and ionic liquid-solvent mixtures Sayago, Jonathan; Meng, Xiang; Quenneville, Francis Journal of Applied Physics, Vol. 117, Issue 11 https://doi.org/10.1063/1.4913835	journal	March 2015
Solvothermal Synthesis of Gallium–Indium-Zinc-Oxide Nanoparticles for Electrolyte-Gated Transistors Santos, Lídia; Nunes, Daniela; Calmeiro, Tomás ACS Applied Materials & Interfaces, Vol. 7, Issue 1 https://doi.org/10.1021/am506814t	journal	December 2014
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors Nomura, Kenji; Ohta, Hiromichi; Takagi, Akihiro Nature, Vol. 432, Issue 7016, p. 488-492 https://doi.org/10.1038/nature03090	journal	November 2004
Stable room temperature deposited amorphous InGaZnO[sub 4] thin film transistors Lim, Wantae; Kim, S. -H.; Wang, Yu-Lin Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 26, Issue 3 https://doi.org/10.1116/1.2917075	journal	January 2008
Effects of gate insulators on the performance of a-IGZO TFT fabricated at room-temperature Chun, Yoon Soo; Chang, Seongpil; Lee, Sang Yeol Microelectronic Engineering, Vol. 88, Issue 7 https://doi.org/10.1016/j.mee.2011.01.076	journal	July 2011
Low-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition Kim, J. B.; Fuentes-Hernandez, C.; Potscavage, W. J. Applied Physics Letters, Vol. 94, Issue 14 https://doi.org/10.1063/1.3118575	journal	April 2009
Printable ion-gel gate dielectrics for low-voltage polymer thin-film transistors on plastic Cho, Jeong Ho; Lee, Jiyoul; Xia, Yu Nature Materials, Vol. 7, Issue 11, p. 900-906 https://doi.org/10.1038/nmat2291	journal	October 2008
Impact of Oxygen Plasma Treatment on the Device Performance of Zinc Oxide Nanoparticle-Based Thin-Film Transistors Faber, Hendrik; Hirschmann, Johannes; Klaumünzer, Martin ACS Applied Materials & Interfaces, Vol. 4, Issue 3 https://doi.org/10.1021/am2018223	journal	February 2012
Printed and Electrochemically Gated, High-Mobility, Inorganic Oxide Nanoparticle FETs and Their Suitability for High-Frequency Applications Dasgupta, Subho; Stoesser, Ganna; Schweikert, Nina Advanced Functional Materials, Vol. 22, Issue 23 https://doi.org/10.1002/adfm.201200951	journal	July 2012
Physical Properties of Ionic Liquids: Database and Evaluation Zhang, Suojiang; Sun, Ning; He, Xuezhong Journal of Physical and Chemical Reference Data, Vol. 35, Issue 4, p. 1475-1517 https://doi.org/10.1063/1.2204959	journal	December 2006
Electric field gating with ionic liquids Misra, Rajiv; McCarthy, Mitchell; Hebard, Arthur F. Applied Physics Letters, Vol. 90, Issue 5 https://doi.org/10.1063/1.2437663	journal	January 2007
Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium–gallium–zinc oxide thin film transistors Huang, Xiaoming; Wu, Chenfei; Lu, Hai Solid-State Electronics, Vol. 86 https://doi.org/10.1016/j.sse.2013.04.025	journal	August 2013
A self‐consistent analysis of temperature‐dependent field‐effect measurements in hydrogenated amorphous silicon thin‐film transistors Schropp, R. E. I.; Snijder, J.; Verwey, J. F. Journal of Applied Physics, Vol. 60, Issue 2 https://doi.org/10.1063/1.337407	journal	July 1986
Electronic Transport in Amorphous Silicon Films Le Comber, P. G.; Spear, W. E. Physical Review Letters, Vol. 25, Issue 8 https://doi.org/10.1103/PhysRevLett.25.509	journal	August 1970
Back-channel-oxidized a-Si:H thin-film transistors Takechi, Kazushige; Hirano, Naoto; Hayama, Hiroshi Journal of Applied Physics, Vol. 84, Issue 7 https://doi.org/10.1063/1.368579	journal	October 1998
“Ionic liquids-in-salt” – a promising electrolyte concept for high-temperature lithium batteries? Marczewski, Maciej J.; Stanje, Bernhard; Hanzu, Ilie Phys. Chem. Chem. Phys., Vol. 16, Issue 24 https://doi.org/10.1039/c4cp01133c	journal	January 2014

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Ultralow Voltage Driving Circuits Based on Coplanar a‐InGaZnO TFTs with Photopatternable Ionic Polymer Gate Dielectric Lee, Dayoon; Kim, Yongchan; Kim, So Young Advanced Electronic Materials, Vol. 5, Issue 10 https://doi.org/10.1002/aelm.201900359	journal	July 2019
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