Spatially-resolved mapping of history-dependent coupled electrochemical and electronical behaviors of electroresistive NiO

Sugiyama, Issei; Kim, Yunseok; Jesse, Stephen; Strelcov, Evgheni; Kumar, Amit; Tselev, Alexander; Rahani, Ehasan Kabiri; Shenoy, Vivek B.; Yamamoto, Takahisa; Shibata, Naoya; Ikuhara, Yuichi; Kalinin, Sergei V.

doi:10.1038/srep06725

Title: Spatially-resolved mapping of history-dependent coupled electrochemical and electronical behaviors of electroresistive NiO

Journal Article · Wed Oct 22 00:00:00 EDT 2014 · Scientific Reports

DOI:https://doi.org/10.1038/srep06725· OSTI ID:1259685

Sugiyama, Issei ^[1]; Kim, Yunseok ^[2]; Jesse, Stephen ^[3]; Strelcov, Evgheni ^[3]; Kumar, Amit ^[4]; Tselev, Alexander ^[3]; Rahani, Ehasan Kabiri ^[5]; Shenoy, Vivek B. ^[5]; Yamamoto, Takahisa ^[6]; Shibata, Naoya ^[7]; Ikuhara, Yuichi ^[8]; Kalinin, Sergei V. ^[3]

The Univ. of Tokyo, Tokyo (Japan)
Sungkyunkwan Univ., Suwon (Republic of Korea)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Queen's Univ. Belfast, Northern Ireland (United Kingdom)
Univ. of Pennsylvania, Philadelphia, PA (United States)
The Univ. of Tokyo, Tokyo (Japan); Nagoya Univ., Aichi (Japan); Japan Fine Ceramics Center, Aichi (Japan)
The Univ. of Tokyo, Tokyo (Japan); PRESTO Japan Science and Technology Agency, Saitama (Japan)
The Univ. of Tokyo, Tokyo (Japan); Japan Fine Ceramics Center, Aichi (Japan); Tohoku Univ., Miyagi (Japan)

We report that bias-induced oxygen ion dynamics underpins a broad spectrum of electroresistive and memristive phenomena in oxide materials. Although widely studied by device-level and local voltage-current spectroscopies, the relationship between electroresistive phenomena, local electrochemical behaviors, and microstructures remains elusive. Here, the interplay between history-dependent electronic transport and electrochemical phenomena in a NiO single crystalline thin filmwith a number of well-defined defect types is explored on the nanometer scale using an atomic force microscopy-based technique. A variety of electrochemically-active regions were observed and spatially resolved relationship between the electronic and electrochemical phenomena was revealed. The regions with pronounced electroresistive activity were further correlated with defects identified by scanning transmission electron microscopy. Using fully coupled mechanical-electrochemical modeling, we illustrate that the spatial distribution of strain plays an important role in electrochemical and electroresistive phenomena. These studies illustrate an approach for simultaneous mapping of the electronic and ionic transport on a single defective structure level such as dislocations or interfaces, and pave the way for creating libraries of defect-specific electrochemical responses.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: CNMS2012-230; 12024046; 2368093l 25106003; AC05-00OR22725; 2368093; 25106003

OSTI ID:: 1259685

Alternate ID(s):: OSTI ID: 1286785

Journal Information:: Scientific Reports, Vol. 4; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 9 works

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References (53)

Resistive switching in transition metal oxides Sawa, Akihito Materials Today, Vol. 11, Issue 6 https://doi.org/10.1016/S1369-7021(08)70119-6	journal	June 2008
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges Waser, Rainer; Dittmann, Regina; Staikov, Georgi Advanced Materials, Vol. 21, Issue 25-26, p. 2632-2663 https://doi.org/10.1002/adma.200900375	journal	July 2009
Nanoionics-based resistive switching memories Waser, Rainer; Aono, Masakazu Nature Materials, Vol. 6, Issue 11, p. 833-840 https://doi.org/10.1038/nmat2023	journal	November 2007
The missing memristor found Strukov, Dmitri B.; Snider, Gregory S.; Stewart, Duncan R. Nature, Vol. 453, Issue 7191 https://doi.org/10.1038/nature06932	journal	May 2008
Nanoscale Memristor Device as Synapse in Neuromorphic Systems Jo, Sung Hyun; Chang, Ting; Ebong, Idongesit Nano Letters, Vol. 10, Issue 4, p. 1297-1301 https://doi.org/10.1021/nl904092h	journal	April 2010
Memristor-based neural networks Thomas, Andy Journal of Physics D: Applied Physics, Vol. 46, Issue 9 https://doi.org/10.1088/0022-3727/46/9/093001	journal	February 2013
Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories Schulman, A.; Rozenberg, M. J.; Acha, C. Physical Review B, Vol. 86, Issue 10 https://doi.org/10.1103/PhysRevB.86.104426	journal	September 2012
Synaptic Modification by Correlated Activity: Hebb's Postulate Revisited Bi, Guo-qiang; Poo, Mu-ming Annual Review of Neuroscience, Vol. 24, Issue 1 https://doi.org/10.1146/annurev.neuro.24.1.139	journal	March 2001
Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device Seo, Kyungah; Kim, Insung; Jung, Seungjae Nanotechnology, Vol. 22, Issue 25 https://doi.org/10.1088/0957-4484/22/25/254023	journal	May 2011
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory Kwon, Deok-Hwang; Kim, Kyung Min; Jang, Jae Hyuck Nature Nanotechnology, Vol. 5, Issue 2 https://doi.org/10.1038/nnano.2009.456	journal	January 2010
Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching IEEE Transactions on Nanotechnology, Vol. 9, Issue 2 https://doi.org/10.1109/TNANO.2010.2041670	journal	March 2010
In-situ transmission electron microscopy of conductive filaments in NiO resistance random access memory and its analysis Fujii, Takashi; Arita, Masashi; Hamada, Kouichi Journal of Applied Physics, Vol. 113, Issue 8 https://doi.org/10.1063/1.4792732	journal	February 2013
Observation of conducting filament growth in nanoscale resistive memories Yang, Yuchao; Gao, Peng; Gaba, Siddharth Nature Communications, Vol. 3, Issue 1 https://doi.org/10.1038/ncomms1737	journal	January 2012
Quantized conductance atomic switch Terabe, K.; Hasegawa, T.; Nakayama, T. Nature, Vol. 433, Issue 7021 https://doi.org/10.1038/nature03190	journal	January 2005
Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers Hasegawa, Tsuyoshi; Terabe, Kazuya; Tsuruoka, Tohru Advanced Materials, Vol. 24, Issue 2 https://doi.org/10.1002/adma.201102597	journal	September 2011
Controlling the Synaptic Plasticity of a Cu2S Gap-Type Atomic Switch Nayak, Alpana; Ohno, Takeo; Tsuruoka, Tohru Advanced Functional Materials, Vol. 22, Issue 17 https://doi.org/10.1002/adfm.201200640	journal	May 2012
Resistive switching behaviors of NiO films with controlled number of conducting filaments Kim, Y. S.; Kim, J. -S.; Choi, J. S. Applied Physics Letters, Vol. 98, Issue 19 https://doi.org/10.1063/1.3589825	journal	May 2011
Direct observation of conducting filaments on resistive switching of NiO thin films Son, J. Y.; Shin, Y. -H. Applied Physics Letters, Vol. 92, Issue 22 https://doi.org/10.1063/1.2931087	journal	June 2008
Scanning probe based observation of bipolar resistive switching NiO films Lee, Min Hwan; Song, Seul Ji; Kim, Kyung Min Applied Physics Letters, Vol. 97, Issue 6 https://doi.org/10.1063/1.3479526	journal	August 2010
Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy Lee, Min Hwan; Kim, Kyung Min; Song, Seul Ji Applied Physics A, Vol. 102, Issue 4 https://doi.org/10.1007/s00339-011-6266-7	journal	January 2011
Switching of nanosized filaments in NiO by conductive atomic force microscopy Nardi, F.; Deleruyelle, D.; Spiga, S. Journal of Applied Physics, Vol. 112, Issue 6 https://doi.org/10.1063/1.4752032	journal	September 2012
Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 Szot, Krzysztof; Speier, Wolfgang; Bihlmayer, Gustav Nature Materials, Vol. 5, Issue 4 https://doi.org/10.1038/nmat1614	journal	March 2006
Identification of screw dislocations as fast-forming sites in Fe-doped SrTiO ₃ Lenser, Ch.; Connell, Z.; Kovács, A. Applied Physics Letters, Vol. 102, Issue 18 https://doi.org/10.1063/1.4804364	journal	May 2013
Nonstoichiometric Dislocation Cores in -Alumina Shibata, N.; Chisholm, M. F.; Nakamura, A. Science, Vol. 316, Issue 5821 https://doi.org/10.1126/science.1136155	journal	April 2007
Direct Evidence for Cation Non-Stoichiometry and Cottrell Atmospheres Around Dislocation Cores in Functional Oxide Interfaces Arredondo, Miryam; Ramasse, Quentin M.; Weyland, Matthew Advanced Materials, Vol. 22, Issue 22 https://doi.org/10.1002/adma.200903631	journal	June 2010
Atomic Structure of a CeO ₂ Grain Boundary: The Role of Oxygen Vacancies Hojo, Hajime; Mizoguchi, Teruyasu; Ohta, Hiromichi Nano Letters, Vol. 10, Issue 11 https://doi.org/10.1021/nl1029336	journal	November 2010
Dislocation pipe diffusion Love, G. R. Acta Metallurgica, Vol. 12, Issue 6 https://doi.org/10.1016/0001-6160(64)90220-2	journal	June 1964
Diffusion Along Dislocations Luther, Lars C. The Journal of Chemical Physics, Vol. 43, Issue 7 https://doi.org/10.1063/1.1697112	journal	October 1965
Real Space Mapping of Li-Ion Transport in Amorphous Si Anodes with Nanometer Resolution Balke, Nina; Jesse, Stephen; Kim, Yoongu Nano Letters, Vol. 10, Issue 9 https://doi.org/10.1021/nl101439x	journal	September 2010
Li-ion dynamics and reactivity on the nanoscale Kalinin, Sergei; Balke, Nina; Jesse, Stephen Materials Today, Vol. 14, Issue 11 https://doi.org/10.1016/S1369-7021(11)70280-2	journal	November 2011
Electrochemical strain microscopy: Probing ionic and electrochemical phenomena in solids at the nanometer level Jesse, Stephen; Kumar, Amit; Arruda, Thomas M. MRS Bulletin, Vol. 37, Issue 7 https://doi.org/10.1557/mrs.2012.144	journal	July 2012
Correlative Multimodal Probing of Ionically-Mediated Electromechanical Phenomena in Simple Oxides Kim, Yunseok; Strelcov, Evgheni; Hwang, In Rok Scientific Reports, Vol. 3, Issue 1 https://doi.org/10.1038/srep02924	journal	October 2013
Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide Kinoshita, K.; Tamura, T.; Aoki, M. Applied Physics Letters, Vol. 89, Issue 10 https://doi.org/10.1063/1.2339032	journal	September 2006
Electrical observations of filamentary conductions for the resistive memory switching in NiO films Kim, D. C.; Seo, S.; Ahn, S. E. Applied Physics Letters, Vol. 88, Issue 20 https://doi.org/10.1063/1.2204649	journal	May 2006
Resistive memory switching in epitaxially grown NiO Lee, S. R.; Char, K.; Kim, D. C. Applied Physics Letters, Vol. 91, Issue 20 https://doi.org/10.1063/1.2815658	journal	November 2007
Interface mediated resistive switching in epitaxial NiO nanostructures Sullaphen, Jivika; Bogle, Kashinath; Cheng, Xuan Applied Physics Letters, Vol. 100, Issue 20 https://doi.org/10.1063/1.4714888	journal	May 2012
Improvement of resistive switching in NiO-based nanowires by inserting Pt layers Huang, Yen-Chun; Chen, Po-Yuan; Chin, Tsung-Shune Applied Physics Letters, Vol. 101, Issue 15 https://doi.org/10.1063/1.4758482	journal	October 2012
Investigation of Interface Formed between Top Electrodes and Epitaxial NiO Films for Bipolar Resistance Switching Lee, Seung Ran; Kim, Hoon Min; Bak, Jung Hoon Japanese Journal of Applied Physics, Vol. 49, Issue 3 https://doi.org/10.1143/JJAP.49.031102	journal	March 2010
Ferromagnetic dislocations in antiferromagnetic NiO Sugiyama, Issei; Shibata, Naoya; Wang, Zhongchang Nature Nanotechnology, Vol. 8, Issue 4 https://doi.org/10.1038/nnano.2013.45	journal	March 2013
Electronic Structure of Lithium Nickel Oxides by Electron Energy Loss Spectroscopy Koyama, Yukinori; Mizoguchi, Teruyasu; Ikeno, Hidekazu The Journal of Physical Chemistry B, Vol. 109, Issue 21 https://doi.org/10.1021/jp050486b	journal	June 2005
Structure of NiO and Li-doped NiO single crystalline thin layers with atomically flat surface Joshi, U. S.; Takahashi, R.; Matsumoto, Y. Thin Solid Films, Vol. 486, Issue 1-2 https://doi.org/10.1016/j.tsf.2004.11.219	journal	August 2005
Nanoscale mapping of ion diffusion in a lithium-ion battery cathode Balke, N.; Jesse, S.; Morozovska, A. N. Nature Nanotechnology, Vol. 5, Issue 10 https://doi.org/10.1038/nnano.2010.174	journal	August 2010
Measuring oxygen reduction/evolution reactions on the nanoscale Kumar, Amit; Ciucci, Francesco; Morozovska, Anna N. Nature Chemistry, Vol. 3, Issue 9 https://doi.org/10.1038/nchem.1112	journal	August 2011
The band excitation method in scanning probe microscopy for rapid mapping of energy dissipation on the nanoscale Jesse, Stephen; Kalinin, Sergei V.; Proksch, Roger Nanotechnology, Vol. 18, Issue 43 https://doi.org/10.1088/0957-4484/18/43/435503	journal	September 2007
Band excitation in scanning probe microscopy: sines of change Jesse, Stephen; Kalinin, Sergei V. Journal of Physics D: Applied Physics, Vol. 44, Issue 46 https://doi.org/10.1088/0022-3727/44/46/464006	journal	November 2011
Probing Local Ionic Dynamics in Functional Oxides at the Nanoscale Strelcov, Evgheni; Kim, Yunseok; Jesse, Stephen Nano Letters, Vol. 13, Issue 8 https://doi.org/10.1021/nl400780d	journal	July 2013
Observation of electric-field induced Ni filament channels in polycrystalline NiOx film Park, Gyeong-Su; Li, Xiang-Shu; Kim, Dong-Chirl Applied Physics Letters, Vol. 91, Issue 22 https://doi.org/10.1063/1.2813617	journal	November 2007
Growth of NiO on Ag(001): Atomic Environment, Strain, and Interface Relaxations Studied by Polarization Dependent Extended X-ray Absorption Fine Structure Groppo, E.; Prestipino, C.; Lamberti, C. The Journal of Physical Chemistry B, Vol. 107, Issue 19 https://doi.org/10.1021/jp027788n	journal	May 2003
Role of oxygen vacancies formed between top electrodes and epitaxial NiO films in bipolar resistance switching Lee, S. R.; Kim, H. M.; Char, K. Current Applied Physics, Vol. 12, Issue 2 https://doi.org/10.1016/j.cap.2011.07.033	journal	March 2012
Publisher's Note: Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories [Phys. Rev. B86, 104426 (2012)] Schulman, A.; Rozenberg, M. J.; Acha, C. Physical Review B, Vol. 86, Issue 9 https://doi.org/10.1103/physrevb.86.099902	journal	September 2012
Space Charge Induced Surface Stresses: Implications in Ceria and Other Ionic Solids Sheldon, Brian W.; Shenoy, Vivek B. Physical Review Letters, Vol. 106, Issue 21 https://doi.org/10.1103/physrevlett.106.216104	journal	May 2011
Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories Ielmini, D.; Nardi, F.; Cagli, C. IEEE Electron Device Letters, Vol. 31, Issue 4 https://doi.org/10.1109/led.2010.2040799	journal	April 2010
Development of Quantized Conductance Atomic Switch Terabe, Kazuya; Hasegawa, Tsuyoshi; Nakayama, Tomonobu Materia Japan, Vol. 44, Issue 9 https://doi.org/10.2320/materia.44.757	journal	January 2005

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Title: Spatially-resolved mapping of history-dependent coupled electrochemical and electronical behaviors of electroresistive NiO

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