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Title: Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4953153· OSTI ID:1281671
 [1];  [1];  [1];  [2];  [1];  [1]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  2. Oregon State Univ., Corvallis, OR (United States)
+ Show Author Affiliations

Sputter deposited amorphous Ge thin films had their nanostructure altered by irradiation with high-energy Ar+ ions. The change in the structure resulted in a reduction in medium range order (MRO) characterized using fluctuation electron microscopy. The pulsed laser crystallization kinetics of the as-deposited versus irradiated materials were investigated using the dynamic transmission electron microscope operated in the multi-frame movie mode. In conclusion, the propagation rate of the crystallization front for the irradiated material was lower; the changes were correlated to the MRO difference and formation of a thin liquid layer during crystallization.

Research Organization:
Lawrence Livermore National Lab., Livermore, CA (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
AC52-07NA27344; AC02-05CH11231
OSTI ID:
1281671
Alternate ID(s):
OSTI ID: 1255463
Report Number(s):
LLNL-JRNL-689356
Journal Information:
Applied Physics Letters, Vol. 108, Issue 22; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 10 works
Citation information provided by
Web of Science

References (25)

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journal June 2010
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Cited By (3)

High-Speed Electron Microscopy book January 2019
In situ dynamic transmission electron microscopy characterization of liquid-mediated crystallization of amorphous Ge journal September 2019
Si-integrated ultrathin films of phase-pure Y 3 Fe 5 O 12 (YIG) via novel two-step rapid thermal anneal journal March 2017

Figures / Tables (4)

Figure 1(p. 15)figure Figure 1
Figure 2(p. 16)figure Figure 2
Figure 3(p. 17)figure Figure 3
Figure 4(p. 18)figure Figure 4

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Related Subjects

36 MATERIALS SCIENCE
crystallization
liquid crystal layers
amorphous semiconductors
crystal growth
thin film growth