Novel and Enhanced Optoelectronic Performances of Multilayer MoS 2 -WS 2 Heterostructure Transistors
Journal Article
·
· Advanced Functional Materials
- Country State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912 Beijing 100083 China
- Nano-Science Center & Department of Chemistry, University of Copenhagen, Universitetsparken 5 DK-2100 Copenhagen Ø Denmark
- National Renewable Energy Laboratory, 1617 Cole Boulevard Golden CO 80401 USA
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE; National Basic Research Program of China; National Natural Science Foundation of China (NNSFC)
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1274107
- Report Number(s):
- NREL/JA-5K00-63309
- Journal Information:
- Advanced Functional Materials, Vol. 24, Issue 44; ISSN 1616-301X
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
Similar Records
Photocarrier Dynamics in TlGaS2 Nanoflakes and van der Waals Heterostructures with Hexagonal Boron Nitride and WS2 Nanoflakes: Implications for Optoelectronic Applications
Enhancement-mode operation of multilayer MoS{sub 2} transistors with a fluoropolymer gate dielectric layer
High performance and transparent multilayer MoS{sub 2} transistors: Tuning Schottky barrier characteristics
Journal Article
·
Thu Aug 06 00:00:00 EDT 2020
· ACS Applied Nano Materials
·
OSTI ID:1274107
+4 more
Enhancement-mode operation of multilayer MoS{sub 2} transistors with a fluoropolymer gate dielectric layer
Journal Article
·
Mon Jun 27 00:00:00 EDT 2016
· Applied Physics Letters
·
OSTI ID:1274107
+2 more
High performance and transparent multilayer MoS{sub 2} transistors: Tuning Schottky barrier characteristics
Journal Article
·
Sun May 15 00:00:00 EDT 2016
· AIP Advances
·
OSTI ID:1274107
+7 more