Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Atmospheric Pressure Growth of Bulk GaN for Substrates for High Temperature Electronics and Optoelectronics.

Conference ·
OSTI ID:1264009

Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1264009
Report Number(s):
SAND2006-4144C; 525550
Country of Publication:
United States
Language:
English

Similar Records

Atmospheric Pressure Molten Salt-Based Growth of Bulk III-N's.
Conference · Sun May 01 00:00:00 EDT 2005 · OSTI ID:1728559

The Growth of Vertically Conducting AlGaN Heterostructures on Patterned GaN Substrates.
Conference · Wed Nov 01 00:00:00 EDT 2017 · OSTI ID:1484085

The Growth of Vertically Conducting AlGaN Heterostructures on Patterned GaN Substrates (invited).
Conference · Wed Aug 01 00:00:00 EDT 2018 · OSTI ID:1582257

Related Subjects