Resistive switching phenomena: A review of statistical physics approaches

Lee, Jae Sung; Lee, Shinbuhm; Noh, Tae Won

doi:10.1063/1.4929512

Title: Resistive switching phenomena: A review of statistical physics approaches

Journal Article · Mon Aug 31 00:00:00 EDT 2015 · Applied Physics Reviews

DOI:https://doi.org/10.1063/1.4929512· OSTI ID:1263835

Lee, Jae Sung ^[1]; Lee, Shinbuhm ^[2]; Noh, Tae Won ^[3]

Korea Inst. for Advanced Study, Seoul (South Korea). School of Physics
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
Center for Correlated Electron Systems, Seoul (South Korea) ; Seoul National Univ. (Korea, Republic of)

Here we report that resistive switching (RS) phenomena are reversible changes in the metastable resistance state induced by external electric fields. After discovery ~50 years ago, RS phenomena have attracted great attention due to their potential application in next-generation electrical devices. Considerable research has been performed to understand the physical mechanisms of RS and explore the feasibility and limits of such devices. There have also been several reviews on RS that attempt to explain the microscopic origins of how regions that were originally insulators can change into conductors. However, little attention has been paid to the most important factor in determining resistance: how conducting local regions are interconnected. Here, we provide an overview of the underlying physics behind connectivity changes in highly conductive regions under an electric field. We first classify RS phenomena according to their characteristic current–voltage curves: unipolar, bipolar, and threshold switchings. Second, we outline the microscopic origins of RS in oxides, focusing on the roles of oxygen vacancies: the effect of concentration, the mechanisms of channel formation and rupture, and the driving forces of oxygen vacancies. Third, we review RS studies from the perspective of statistical physics to understand connectivity change in RS phenomena. We discuss percolation model approaches and the theory for the scaling behaviors of numerous transport properties observed in RS. Fourth, we review various switching-type conversion phenomena in RS: bipolar-unipolar, memory-threshold, figure-of-eight, and counter-figure-of-eight conversions. Finally, we review several related technological issues, such as improvement in high resistance fluctuations, sneak-path problems, and multilevel switching problems.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1263835

Alternate ID(s):: OSTI ID: 1229652

Journal Information:: Applied Physics Reviews, Vol. 2, Issue 3; ISSN 1931-9401

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 305 works

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References (383)

Electrical phenomena in amorphous oxide films Dearnaley, G.; Stoneham, A. M.; Morgan, D. V. Reports on Progress in Physics, Vol. 33, Issue 3 https://doi.org/10.1088/0034-4885/33/3/306	journal	September 1970
Perovskite Oxides as Resistive Switching Memories: A Review Panda, Debashis; Tseng, Tseung-Yuen Ferroelectrics, Vol. 471, Issue 1 https://doi.org/10.1080/00150193.2014.922389	journal	October 2014
Large resistive-switching phenomena observed in Ag/Si ₃ N ₄ /Al memory cells Kim, Hee-Dong; An, Ho-Myoung; Kim, Kyoung Chan Semiconductor Science and Technology, Vol. 25, Issue 6 https://doi.org/10.1088/0268-1242/25/6/065002	journal	April 2010
Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices Kim, Hee-Dong; An, Ho-Myoung; Lee, Eui Bok IEEE Transactions on Electron Devices, Vol. 58, Issue 10 https://doi.org/10.1109/TED.2011.2162518	journal	October 2011
Phase-change memories Lacaita, Andrea L.; Wouters, Dirk J. physica status solidi (a), Vol. 205, Issue 10 https://doi.org/10.1002/pssa.200723561	journal	October 2008
Cation-based resistance change memory Valov, Ilia; Kozicki, Michael N. Journal of Physics D: Applied Physics, Vol. 46, Issue 7 https://doi.org/10.1088/0022-3727/46/7/074005	journal	February 2013
Nonvolatile Memory Elements Based on Organic Materials Scott, J. C.; Bozano, L. D. Advanced Materials, Vol. 19, Issue 11 https://doi.org/10.1002/adma.200602564	journal	June 2007
Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures Cho, Byungjin; Song, Sunghun; Ji, Yongsung Advanced Functional Materials, Vol. 21, Issue 15 https://doi.org/10.1002/adfm.201100686	journal	July 2011
Low‐Frequency Negative Resistance in Thin Anodic Oxide Films Hickmott, T. W. Journal of Applied Physics, Vol. 33, Issue 9 https://doi.org/10.1063/1.1702530	journal	September 1962
Bistable Switching in Niobium Oxide Diodes Hiatt, W. R.; Hickmott, T. W. Applied Physics Letters, Vol. 6, Issue 6 https://doi.org/10.1063/1.1754187	journal	March 1965
Metal-insulator-metal sandwich structures with anomalous properties Biederman, H. Vacuum, Vol. 26, Issue 12 https://doi.org/10.1016/S0042-207X(76)81130-X	journal	January 1976
Possible highT c superconductivity in the Ba?La?Cu?O system Bednorz, J. G.; M�ller, K. A. Zeitschrift f�r Physik B Condensed Matter, Vol. 64, Issue 2 https://doi.org/10.1007/BF01303701	journal	June 1986
Electrodynamics of correlated electron materials Basov, D. N.; Averitt, Richard D.; van der Marel, Dirk Reviews of Modern Physics, Vol. 83, Issue 2 https://doi.org/10.1103/RevModPhys.83.471	journal	June 2011
Cramming More Components Onto Integrated Circuits Moore, G.E. Proceedings of the IEEE, Vol. 86, Issue 1, p. 82-85 https://doi.org/10.1109/JPROC.1998.658762	journal	January 1998
Moore's law: the future of Si microelectronics Thompson, Scott E.; Parthasarathy, Srivatsan Materials Today, Vol. 9, Issue 6 https://doi.org/10.1016/S1369-7021(06)71539-5	journal	June 2006
Reproducible switching effect in thin oxide films for memory applications Beck, A.; Bednorz, J. G.; Gerber, Ch. Applied Physics Letters, Vol. 77, Issue 1 https://doi.org/10.1063/1.126902	journal	July 2000
Electric-pulse-induced reversible resistance change effect in magnetoresistive films Liu, S. Q.; Wu, N. J.; Ignatiev, A. Applied Physics Letters, Vol. 76, Issue 19 https://doi.org/10.1063/1.126464	journal	May 2000
Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses Baek, I. G.; Lee, M. S.; Sco, S. IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. https://doi.org/10.1109/IEDM.2004.1419228	conference	January 2004
Novel colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM) Zhuang, W. W.; Pan, W.; Ulrich, B. D. IEEE International Electron Devices Meeting, Digest. International Electron Devices Meeting, https://doi.org/10.1109/IEDM.2002.1175811	conference	January 2002
A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories Lee, M. -J.; Seo, S.; Kim, D. -C. Advanced Materials, Vol. 19, Issue 1 https://doi.org/10.1002/adma.200601025	journal	January 2007
Electrical observations of filamentary conductions for the resistive memory switching in NiO films Kim, D. C.; Seo, S.; Ahn, S. E. Applied Physics Letters, Vol. 88, Issue 20 https://doi.org/10.1063/1.2204649	journal	May 2006
Observation of electric-field induced Ni filament channels in polycrystalline NiOx film Park, Gyeong-Su; Li, Xiang-Shu; Kim, Dong-Chirl Applied Physics Letters, Vol. 91, Issue 22 https://doi.org/10.1063/1.2813617	journal	November 2007
Conductivity switching characteristics and reset currents in NiO films Seo, S.; Lee, M. J.; Seo, D. H. Applied Physics Letters, Vol. 86, Issue 9 https://doi.org/10.1063/1.1872217	journal	February 2005
Reproducible resistance switching in polycrystalline NiO films Seo, S.; Lee, M. J.; Seo, D. H. Applied Physics Letters, Vol. 85, Issue 23 https://doi.org/10.1063/1.1831560	journal	December 2004
Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory Lee, Myoung-Jae; Han, Seungwu; Jeon, Sang Ho Nano Letters, Vol. 9, Issue 4 https://doi.org/10.1021/nl803387q	journal	April 2009
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta₂O_5−x/TaO_2−x bilayer structures Lee, Myoung-Jae; Lee, Chang Bum; Lee, Dongsoo Nature Materials, Vol. 10, Issue 8, p. 625-630 https://doi.org/10.1038/nmat3070	journal	July 2011
Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory Lee, Myoung-Jae; Kim, Sun I.; Lee, Chang B. Advanced Functional Materials, Vol. 19, Issue 10 https://doi.org/10.1002/adfm.200801032	journal	May 2009
Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory Ahn, S. -E.; Lee, M. -J.; Park, Y. Advanced Materials, Vol. 20, Issue 5 https://doi.org/10.1002/adma.200702081	journal	March 2008
Electrode dependence of resistance switching in polycrystalline NiO films Seo, S.; Lee, M. J.; Kim, D. C. Applied Physics Letters, Vol. 87, Issue 26 https://doi.org/10.1063/1.2150580	journal	December 2005
‘Memristive’ switches enable ‘stateful’ logic operations via material implication Borghetti, Julien; Snider, Gregory S.; Kuekes, Philip J. Nature, Vol. 464, Issue 7290 https://doi.org/10.1038/nature08940	journal	April 2010
Direct Identification of the Conducting Channels in a Functioning Memristive Device Strachan, John Paul; Pickett, Matthew D.; Yang, J. Joshua Advanced Materials, Vol. 22, Issue 32, p. 3573-3577 https://doi.org/10.1002/adma.201000186	journal	June 2010
The missing memristor found Strukov, Dmitri B.; Snider, Gregory S.; Stewart, Duncan R. Nature, Vol. 453, Issue 7191 https://doi.org/10.1038/nature06932	journal	May 2008
Memristor−CMOS Hybrid Integrated Circuits for Reconfigurable Logic Xia, Qiangfei; Robinett, Warren; Cumbie, Michael W. Nano Letters, Vol. 9, Issue 10 https://doi.org/10.1021/nl901874j	journal	October 2009
The mechanism of electroforming of metal oxide memristive switches Joshua Yang, J.; Miao, Feng; Pickett, Matthew D. Nanotechnology, Vol. 20, Issue 21 https://doi.org/10.1088/0957-4484/20/21/215201	journal	May 2009
Memristive switching mechanism for metal/oxide/metal nanodevices Yang, J. Joshua; Pickett, Matthew D.; Li, Xuema Nature Nanotechnology, Vol. 3, Issue 7 https://doi.org/10.1038/nnano.2008.160	journal	June 2008
Memristive devices for computing Yang, J. Joshua; Strukov, Dmitri B.; Stewart, Duncan R. Nature Nanotechnology, Vol. 8, Issue 1, p. 13-24 https://doi.org/10.1038/nnano.2012.240	journal	January 2013
A scalable neuristor built with Mott memristors Pickett, Matthew D.; Medeiros-Ribeiro, Gilberto; Williams, R. Stanley Nature Materials, Vol. 12, Issue 2 https://doi.org/10.1038/nmat3510	journal	December 2012
Nanoionics-based resistive switching memories Waser, Rainer; Aono, Masakazu Nature Materials, Vol. 6, Issue 11, p. 833-840 https://doi.org/10.1038/nmat2023	journal	November 2007
Bistable switching in electroformed metal–insulator–metal devices Pagnia, H.; Sotnik, N. Physica Status Solidi (a), Vol. 108, Issue 1 https://doi.org/10.1002/pssa.2211080102	journal	July 1988
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges Waser, Rainer; Dittmann, Regina; Staikov, Georgi Advanced Materials, Vol. 21, Issue 25-26, p. 2632-2663 https://doi.org/10.1002/adma.200900375	journal	July 2009
Resistive switching in transition metal oxides Sawa, Akihito Materials Today, Vol. 11, Issue 6 https://doi.org/10.1016/S1369-7021(08)70119-6	journal	June 2008
Resistive non-volatile memory devices (Invited Paper) Waser, Rainer Microelectronic Engineering, Vol. 86, Issue 7-9 https://doi.org/10.1016/j.mee.2009.03.132	journal	July 2009
Adaptive oxide electronics: A review Ha, Sieu D.; Ramanathan, Shriram Journal of Applied Physics, Vol. 110, Issue 7 https://doi.org/10.1063/1.3640806	journal	October 2011
Memory materials: a unifying description Di Ventra, Massimiliano; Pershin, Yuriy V. Materials Today, Vol. 14, Issue 12 https://doi.org/10.1016/S1369-7021(11)70299-1	journal	December 2011
Resistive Random Access Memory (ReRAM) Based on Metal Oxides Akinaga, Hiroyuki; Shima, Hisashi Proceedings of the IEEE, Vol. 98, Issue 12 https://doi.org/10.1109/JPROC.2010.2070830	journal	December 2010
Memory effects in complex materials and nanoscale systems Pershin, Yuriy V.; Di Ventra, Massimiliano Advances in Physics, Vol. 60, Issue 2 https://doi.org/10.1080/00018732.2010.544961	journal	April 2011
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook Kim, Kyung Min; Jeong, Doo Seok; Hwang, Cheol Seong Nanotechnology, Vol. 22, Issue 25 https://doi.org/10.1088/0957-4484/22/25/254002	journal	May 2011
Electrochemical metallization memories—fundamentals, applications, prospects Valov, Ilia; Waser, Rainer; Jameson, John R. Nanotechnology, Vol. 22, Issue 25 https://doi.org/10.1088/0957-4484/22/25/254003	journal	May 2011
Metal–Oxide RRAM Wong, H.-S. Philip; Lee, Heng-Yuan; Yu, Shimeng Proceedings of the IEEE, Vol. 100, Issue 6, p. 1951-1970 https://doi.org/10.1109/JPROC.2012.2190369	journal	June 2012
Emerging memories: resistive switching mechanisms and current status Jeong, Doo Seok; Thomas, Reji; Katiyar, R. S. Reports on Progress in Physics, Vol. 75, Issue 7 https://doi.org/10.1088/0034-4885/75/7/076502	journal	June 2012
A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View Seok, Jun Yeong; Song, Seul Ji; Yoon, Jung Ho Advanced Functional Materials, Vol. 24, Issue 34 https://doi.org/10.1002/adfm.201303520	journal	July 2014
Nanocrystals for silicon-based light-emitting and memory devices Ray, S. K.; Maikap, S.; Banerjee, W. Journal of Physics D: Applied Physics, Vol. 46, Issue 15 https://doi.org/10.1088/0022-3727/46/15/153001	journal	March 2013
Transition metal oxide thin films for nonvolatile resistive random access memory applications Bao, Dinghua Journal of the Ceramic Society of Japan, Vol. 117, Issue 1369 https://doi.org/10.2109/jcersj2.117.929	journal	January 2009
Current Status of Nonvolatile Semiconductor Memory Technology Fujisaki, Yoshihisa Japanese Journal of Applied Physics, Vol. 49, Issue 10 https://doi.org/10.1143/JJAP.49.100001	journal	October 2010
Atomic switches: atomic-movement-controlled nanodevices for new types of computing Hino, Takami; Hasegawa, Tsuyoshi; Terabe, Kazuya Science and Technology of Advanced Materials, Vol. 12, Issue 1 https://doi.org/10.1088/1468-6996/12/1/013003	journal	February 2011
Thermochemical resistive switching: materials, mechanisms, and scaling projections Ielmini, Daniele; Bruchhaus, Rainer; Waser, Rainer Phase Transitions, Vol. 84, Issue 7 https://doi.org/10.1080/01411594.2011.561478	journal	July 2011
Resistive Switching Phenomena in Complex Oxide Heterostructures Jin, Yu-Ling; Jin, Kui-Juan; Ge, Chen Modern Physics Letters B, Vol. 27, Issue 29 https://doi.org/10.1142/S0217984913300214	journal	November 2013
A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope Lanza, Mario Materials, Vol. 7, Issue 3 https://doi.org/10.3390/ma7032155	journal	March 2014
Resistive switching memory: observations with scanning probe microscopy Lee, Min Hwan; Hwang, Cheol Seong Nanoscale, Vol. 3, Issue 2 https://doi.org/10.1039/C0NR00580K	journal	January 2011
Emerging memory technologies: Trends, challenges, and modeling methods Makarov, A.; Sverdlov, V.; Selberherr, S. Microelectronics Reliability, Vol. 52, Issue 4 https://doi.org/10.1016/j.microrel.2011.10.020	journal	April 2012
Challenges and opportunities for future non-volatile memory technology Nishi, Yoshio Current Applied Physics, Vol. 11, Issue 2 https://doi.org/10.1016/j.cap.2011.01.022	journal	March 2011
Resistance switching in oxides with inhomogeneous conductivity Shang, Da-Shan; Sun, Ji-Rong; Shen, Bao-Gen Chinese Physics B, Vol. 22, Issue 6 https://doi.org/10.1088/1674-1056/22/6/067202	journal	June 2013
Resistive Switching Effect in Titanium Oxides Tang, Zhensen; Chi, Yaqing; Fang, Liang Journal of Nanoscience and Nanotechnology, Vol. 14, Issue 2 https://doi.org/10.1166/jnn.2014.9116	journal	February 2014
Redox-Based Resistive Switching Memories Waser, Rainer Journal of Nanoscience and Nanotechnology, Vol. 12, Issue 10 https://doi.org/10.1166/jnn.2012.6652	journal	October 2012
Nanoscale resistive switching devices: mechanisms and modeling Yang, Yuchao; Lu, Wei Nanoscale, Vol. 5, Issue 21 https://doi.org/10.1039/c3nr03472k	journal	January 2013
Memristor-The missing circuit element Chua, L. IEEE Transactions on Circuit Theory, Vol. 18, Issue 5 https://doi.org/10.1109/TCT.1971.1083337	journal	January 1971
Memristive devices and systems Chua, L. O. Proceedings of the IEEE, Vol. 64, Issue 2 https://doi.org/10.1109/PROC.1976.10092	journal	January 1976
Carbon nanotube composites with high dielectric constant at low percolation threshold Wang, Lan; Dang, Zhi-Min Applied Physics Letters, Vol. 87, Issue 4 https://doi.org/10.1063/1.1996842	journal	July 2005
Decrease in switching voltage fluctuation of Pt∕NiOx∕Pt structure by process control Jung, Ranju; Lee, Myoung-Jae; Seo, Sunae Applied Physics Letters, Vol. 91, Issue 2 https://doi.org/10.1063/1.2755712	journal	July 2007
Improvement of resistive memory switching in NiO using IrO2 Kim, D. C.; Lee, M. J.; Ahn, S. E. Applied Physics Letters, Vol. 88, Issue 23 https://doi.org/10.1063/1.2210087	journal	June 2006
Predictability of reset switching voltages in unipolar resistance switching Lee, S. B.; Chae, S. C.; Chang, S. H. Applied Physics Letters, Vol. 94, Issue 17 https://doi.org/10.1063/1.3126019	journal	April 2009
Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode Liu, Qi; Long, Shibing; Lv, Hangbing ACS Nano, Vol. 4, Issue 10 https://doi.org/10.1021/nn1017582	journal	September 2010
Random Circuit Breaker Network Model for Unipolar Resistance Switching Chae, Seung Chul; Lee, Jae Sung; Kim, Sejin Advanced Materials, Vol. 20, Issue 6 https://doi.org/10.1002/adma.200702024	journal	March 2008
Highly Improved Uniformity in the Resistive Switching Parameters of TiO ₂ Thin Films by Inserting Ru Nanodots Yoon, Jung Ho; Han, Jeong Hwan; Jung, Ji Sim Advanced Materials, Vol. 25, Issue 14 https://doi.org/10.1002/adma.201204572	journal	February 2013
Improvement of resistive switching memory achieved by using arc-shaped bottom electrode Wang, Zhongqiang; Zhao, Kaidong; Xu, Haiyang Applied Physics Express, Vol. 8, Issue 1 https://doi.org/10.7567/APEX.8.014101	journal	December 2014
Improvement of Resistive Switching in $\hbox{Cu}_{x} \hbox{O}$ Using New RESET Mode Yin, M.; Zhou, P.; Lv, H. B. IEEE Electron Device Letters, Vol. 29, Issue 7 https://doi.org/10.1109/LED.2008.923319	journal	July 2008
Enhanced endurance reliability and low current operation for AlOx/HfOx based unipolar RRAM with Ni electrode Chen, Yu-Sheng; Chen, Pang-Shiu; Lee, Heng-Yuan Solid-State Electronics, Vol. 94 https://doi.org/10.1016/j.sse.2014.01.003	journal	April 2014
Improvement of resistive switching in NiO-based nanowires by inserting Pt layers Huang, Yen-Chun; Chen, Po-Yuan; Chin, Tsung-Shune Applied Physics Letters, Vol. 101, Issue 15 https://doi.org/10.1063/1.4758482	journal	October 2012
Improvement of Resistive Switching Characteristics in $\hbox{SrZrO}_{3}$ Thin Films With Embedded Cr Layer Lin, Chih-Yang; Lin, Meng-Han; Wu, Ming-Chi IEEE Electron Device Letters, Vol. 29, Issue 10 https://doi.org/10.1109/LED.2008.2002879	journal	October 2008
Improvement of switching uniformity in HfO _x -based resistive random access memory with a titanium film and effects of titanium on resistive switching behaviors Ban, Sanghyun; Kim, Ohyun Japanese Journal of Applied Physics, Vol. 53, Issue 6S https://doi.org/10.7567/JJAP.53.06JE15	journal	May 2014
Improved Resistive Switching Dispersion of NiO _x Thin Film by Cu-Doping Method Liu, Chih-Yi; Lin, Xin-Jie; Wang, Hung-Yu Japanese Journal of Applied Physics, Vol. 49, Issue 5 https://doi.org/10.1143/JJAP.49.056507	journal	May 2010
Reset Current Reduction with Excellent Filament Controllability by Using Area Minimized and Field Enhanced Unipolar Resistive Random Access Memory Structure Ryoo, Kyung-Chang; Oh, Jeong-Hoon; Jung, Sunghun Japanese Journal of Applied Physics, Vol. 51, Issue 4S https://doi.org/10.7567/JJAP.51.04DD07	journal	April 2012
$\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode IEEE Electron Device Letters, Vol. 30, Issue 7 https://doi.org/10.1109/LED.2009.2021004	journal	July 2009
MATERIALS SCIENCE: Who Wins the Nonvolatile Memory Race? Meijer, G. I. Science, Vol. 319, Issue 5870 https://doi.org/10.1126/science.1153909	journal	March 2008
Fractal Concepts in Surface Growth Barabási, A. - L.; Stanley, H. E. https://doi.org/10.1017/CBO9780511599798	book	January 1995
Universality classes in nonequilibrium lattice systems Ódor, Géza Reviews of Modern Physics, Vol. 76, Issue 3 https://doi.org/10.1103/RevModPhys.76.663	journal	August 2004
Percolation models for gate oxide breakdown Stathis, J. H. Journal of Applied Physics, Vol. 86, Issue 10 https://doi.org/10.1063/1.371590	journal	November 1999
1/ f noise in random resistor networks: Fractals and percolating systems Rammal, R.; Tannous, C.; Tremblay, A. -M. S. Physical Review A, Vol. 31, Issue 4 https://doi.org/10.1103/PhysRevA.31.2662	journal	April 1985
Measurement of the fourth moment of the current distribution in two-dimensional random resistor networks Dubson, M. A.; Hui, Y. C.; Weissman, M. B. Physical Review B, Vol. 39, Issue 10 https://doi.org/10.1103/PhysRevB.39.6807	journal	April 1989
ac conduction and 1/f noise in a Cr-film lattice-percolation system Song, Yi; Lee, Sung-Ik; Gaines, James R. Physical Review B, Vol. 46, Issue 1 https://doi.org/10.1103/PhysRevB.46.14	journal	July 1992
Electrical breakdown measurements of semicontinuous metal films Yagil, Yoad; Deutscher, Guy; Bergman, David J. Physical Review Letters, Vol. 69, Issue 9 https://doi.org/10.1103/PhysRevLett.69.1423	journal	August 1992
Interface-modified random circuit breaker network model applicable to both bipolar and unipolar resistance switching Lee, S. B.; Lee, J. S.; Chang, S. H. Applied Physics Letters, Vol. 98, Issue 3 https://doi.org/10.1063/1.3543776	journal	January 2011
High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application Yoshida, Chikako; Tsunoda, Kohji; Noshiro, Hideyuki Applied Physics Letters, Vol. 91, Issue 22 https://doi.org/10.1063/1.2818691	journal	November 2007
Coexistence of Bipolar and Unipolar Resistive Switching Behaviors in a Pt∕TiO[sub 2]∕Pt Stack Jeong, Doo Seok; Schroeder, Herbert; Waser, Rainer Electrochemical and Solid-State Letters, Vol. 10, Issue 8 https://doi.org/10.1149/1.2742989	journal	January 2007
Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers Goux, L.; Lisoni, J. G.; Jurczak, M. Journal of Applied Physics, Vol. 107, Issue 2 https://doi.org/10.1063/1.3275426	journal	January 2010
Reversible alternation between bipolar and unipolar resistive switching in polycrystalline barium strontium titanate thin films Shen, Wan; Dittmann, Regina; Waser, Rainer Journal of Applied Physics, Vol. 107, Issue 9 https://doi.org/10.1063/1.3369285	journal	May 2010
Resistive switching in a Pt/TiO2/Pt thin film stack – a candidate for a non-volatile ReRAM Schroeder, Herbert; Jeong, Doo Seok Microelectronic Engineering, Vol. 84, Issue 9-10 https://doi.org/10.1016/j.mee.2007.04.042	journal	September 2007
A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO ₂ /Pt structure Kim, Kyung Min; Choi, Byung Joon; Lee, Min Hwan Nanotechnology, Vol. 22, Issue 25 https://doi.org/10.1088/0957-4484/22/25/254010	journal	May 2011
Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO ₂ /Pt cell Yoon, Kyung Jean; Lee, Min Hwan; Kim, Gun Hwan Nanotechnology, Vol. 23, Issue 18 https://doi.org/10.1088/0957-4484/23/18/185202	journal	April 2012
Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction Cagli, C.; Ielmini, D.; Nardi, F. 2008 IEEE International Electron Devices Meeting (IEDM) https://doi.org/10.1109/IEDM.2008.4796678	conference	December 2008
Effects of heat dissipation on unipolar resistance switching in Pt∕NiO∕Pt capacitors Chang, S. H.; Chae, S. C.; Lee, S. B. Applied Physics Letters, Vol. 92, Issue 18 https://doi.org/10.1063/1.2924304	journal	May 2008
Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film Chang, S. H.; Lee, J. S.; Chae, S. C. Physical Review Letters, Vol. 102, Issue 2 https://doi.org/10.1103/PhysRevLett.102.026801	journal	January 2009
Memory and Threshold Resistance Switching in Ni/NiO Core–Shell Nanowires He, Li; Liao, Zhi-Min; Wu, Han-Chun Nano Letters, Vol. 11, Issue 11 https://doi.org/10.1021/nl202017k	journal	November 2011
Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation Peng, Hai Yang; Li, Yong Feng; Lin, Wei Nan Scientific Reports, Vol. 2, Issue 1 https://doi.org/10.1038/srep00442	journal	June 2012
Dielectric breakdown I: A review of oxide breakdown Verweij, J. F.; Klootwijk, J. H. Microelectronics Journal, Vol. 27, Issue 7 https://doi.org/10.1016/0026-2692(95)00104-2	journal	October 1996
Role of Oxygen Vacancies in Cr-Doped SrTiO3 for Resistance-Change Memory Janousch, M.; Meijer, G. I.; Staub, U. Advanced Materials, Vol. 19, Issue 17 https://doi.org/10.1002/adma.200602915	journal	September 2007
Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices Fujiwara, Kohei; Nemoto, Takumi; Rozenberg, Marcelo J. Japanese Journal of Applied Physics, Vol. 47, Issue 8 https://doi.org/10.1143/JJAP.47.6266	journal	August 2008
In situ imaging of the conducting filament in a silicon oxide resistive switch Yao, Jun; Zhong, Lin; Natelson, Douglas Scientific Reports, Vol. 2, Issue 1 https://doi.org/10.1038/srep00242	journal	January 2012
Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories Bocquet, Marc; Deleruyelle, Damien; Muller, Christophe Applied Physics Letters, Vol. 98, Issue 26 https://doi.org/10.1063/1.3605591	journal	June 2011
Resistive-Switching Crossbar Memory Based on Ni-NiO Core-Shell Nanowires Cagli, Carlo; Nardi, Federico; Harteneck, Bruce Small, Vol. 7, Issue 20 https://doi.org/10.1002/smll.201101157	journal	August 2011
Temperature dependence of high- and low-resistance bistable states in polycrystalline NiO films Jung, Kyooho; Seo, Hongwoo; Kim, Yongmin Applied Physics Letters, Vol. 90, Issue 5 https://doi.org/10.1063/1.2437668	journal	January 2007
Filamentary Resistive Switching Localized at Cathode Interface in NiO Thin Films Kim, Kyung Min; Choi, Byung Joon; Song, Seul Ji Journal of The Electrochemical Society, Vol. 156, Issue 12 https://doi.org/10.1149/1.3240201	journal	January 2009
Study of Transport and Dielectric of Resistive Memory States in NiO Thin Film Kim, Min Gyu; Kim, Sun Man; Choi, Eun Jip Japanese Journal of Applied Physics, Vol. 44, Issue No. 42 https://doi.org/10.1143/JJAP.44.L1301	journal	October 2005
Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide Kinoshita, K.; Tamura, T.; Aoki, M. Applied Physics Letters, Vol. 89, Issue 10 https://doi.org/10.1063/1.2339032	journal	September 2006
Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance Kinoshita, K.; Tsunoda, K.; Sato, Y. Applied Physics Letters, Vol. 93, Issue 3 https://doi.org/10.1063/1.2959065	journal	July 2008
Scaling behaviors of reset voltages and currents in unipolar resistance switching Lee, S. B.; Chae, S. C.; Chang, S. H. Applied Physics Letters, Vol. 93, Issue 21 https://doi.org/10.1063/1.3036532	journal	November 2008
Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices Russo, Ugo; Ielmini, Daniele; Cagli, Carlo IEEE Transactions on Electron Devices, Vol. 56, Issue 2 https://doi.org/10.1109/TED.2008.2010584	journal	February 2009
Direct observation of conducting filaments on resistive switching of NiO thin films Son, J. Y.; Shin, Y. -H. Applied Physics Letters, Vol. 92, Issue 22 https://doi.org/10.1063/1.2931087	journal	June 2008
Random and localized resistive switching observation in Pt/NiO/Pt Yun, Jung-Bin; Kim, Sejin; Seo, Sunae physica status solidi (RRL) – Rapid Research Letters, Vol. 1, Issue 6 https://doi.org/10.1002/pssr.200701205	journal	November 2007
Multilevel unipolar resistance switching in TiO2 thin films Lee, J. S.; Choi, W. S.; Lee, S. B. Applied Physics Letters, Vol. 95, Issue 9 https://doi.org/10.1063/1.3224185	journal	August 2009
Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films Kim, Kyung Min; Choi, Byung Joon; Shin, Yong Cheol Applied Physics Letters, Vol. 91, Issue 1 https://doi.org/10.1063/1.2749846	journal	July 2007
Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors Strukov, Dmitri B.; Alibart, Fabien; Stanley Williams, R. Applied Physics A, Vol. 107, Issue 3 https://doi.org/10.1007/s00339-012-6902-x	journal	March 2012
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory Kwon, Deok-Hwang; Kim, Kyung Min; Jang, Jae Hyuck Nature Nanotechnology, Vol. 5, Issue 2 https://doi.org/10.1038/nnano.2009.456	journal	January 2010
Study on the resistive switching time of TiO2 thin films Choi, Byung Joon; Choi, Seol; Kim, Kyung Min Applied Physics Letters, Vol. 89, Issue 1 https://doi.org/10.1063/1.2219726	journal	July 2006
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition Choi, B. J.; Jeong, D. S.; Kim, S. K. Journal of Applied Physics, Vol. 98, Issue 3 https://doi.org/10.1063/1.2001146	journal	August 2005
Resistance-switching Characteristics of polycrystalline Nb/sub 2/O/sub 5/ for nonvolatile memory application IEEE Electron Device Letters, Vol. 26, Issue 5 https://doi.org/10.1109/LED.2005.846592	journal	May 2005
Nanoscale resistive switching in SrTiO3 thin films Szot, K.; Dittmann, R.; Speier, W. physica status solidi (RRL) – Rapid Research Letters, Vol. 1, Issue 2 https://doi.org/10.1002/pssr.200701003	journal	March 2007
Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface Sawa, A.; Fujii, T.; Kawasaki, M. Applied Physics Letters, Vol. 85, Issue 18 https://doi.org/10.1063/1.1812580	journal	November 2004
Resistance switching in perovskite thin films Ignatiev, A.; Wu, N. J.; Chen, X. physica status solidi (b), Vol. 243, Issue 9 https://doi.org/10.1002/pssb.200666805	journal	July 2006
Effect of top electrode on resistance switching of (Pr, Ca)MnO3 thin films Kim, Chang Jung; Chen, I-Wei Thin Solid Films, Vol. 515, Issue 4 https://doi.org/10.1016/j.tsf.2006.03.031	journal	December 2006
Interface resistance switching at a few nanometer thick perovskite manganite active layers Sawa, A.; Fujii, T.; Kawasaki, M. Applied Physics Letters, Vol. 88, Issue 23 https://doi.org/10.1063/1.2211147	journal	June 2006
Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode Shen, Wan; Dittmann, Regina; Breuer, Uwe Applied Physics Letters, Vol. 93, Issue 22 https://doi.org/10.1063/1.3039809	journal	December 2008
Nonvolatile resistive switching in metal/La-doped BiFeO ₃ /Pt sandwiches Li, Mi; Zhuge, Fei; Zhu, Xiaojian Nanotechnology, Vol. 21, Issue 42 https://doi.org/10.1088/0957-4484/21/42/425202	journal	September 2010
Evidence for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Transition-Metal Oxides Nian, Y. B.; Strozier, J.; Wu, N. J. Physical Review Letters, Vol. 98, Issue 14 https://doi.org/10.1103/PhysRevLett.98.146403	journal	April 2007
Solid-state memories based on ferroelectric tunnel junctions Chanthbouala, André; Crassous, Arnaud; Garcia, Vincent Nature Nanotechnology, Vol. 7, Issue 2 https://doi.org/10.1038/nnano.2011.213	journal	December 2011
A ferroelectric memristor Chanthbouala, André; Garcia, Vincent; Cherifi, Ryan O. Nature Materials, Vol. 11, Issue 10 https://doi.org/10.1038/nmat3415	journal	September 2012
Ferroelectric Tunnel Memristor Kim, D. J.; Lu, H.; Ryu, S. Nano Letters, Vol. 12, Issue 11 https://doi.org/10.1021/nl302912t	journal	October 2012
Electrical current distribution across a metal–insulator–metal structure during bistable switching Rossel, C.; Meijer, G. I.; Brémaud, D. Journal of Applied Physics, Vol. 90, Issue 6 https://doi.org/10.1063/1.1389522	journal	September 2001
Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions Wen, Zheng; Li, Chen; Wu, Di Nature Materials, Vol. 12, Issue 7 https://doi.org/10.1038/nmat3649	journal	May 2013
Resistance switching in polycrystalline BiFeO3 thin films Yin, Kuibo; Li, Mi; Liu, Yiwei Applied Physics Letters, Vol. 97, Issue 4 https://doi.org/10.1063/1.3467838	journal	July 2010
Forming mechanism of the bipolar resistance switching in double-layer memristive nanodevices Lee, S. B.; Yoo, H. K.; Kim, K. Nanotechnology, Vol. 23, Issue 31 https://doi.org/10.1088/0957-4484/23/31/315202	journal	July 2012
In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure Park, Gyeong-Su; Kim, Young Bae; Park, Seong Yong Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms3382	journal	September 2013
Modeling for bipolar resistive memory switching in transition-metal oxides Hur, Ji Hyun; Lee, Myoung-Jae; Lee, Chang Bum Physical Review B, Vol. 82, Issue 15 https://doi.org/10.1103/PhysRevB.82.155321	journal	October 2010
Effect of Scaling $\hbox{WO}_{x}$-Based RRAMs on Their Resistive Switching Characteristics IEEE Electron Device Letters, Vol. 32, Issue 5 https://doi.org/10.1109/LED.2011.2114320	journal	May 2011
Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing Shang, D. S.; Shi, L.; Sun, J. R. Applied Physics Letters, Vol. 96, Issue 7 https://doi.org/10.1063/1.3300637	journal	February 2010
Pt/Ti/Al2O3/Al tunnel junctions exhibiting electroforming-free bipolar resistive switching behavior Jeong, Doo Seok; Cheong, Byung-ki; Kohlstedt, Hermann Solid-State Electronics, Vol. 63, Issue 1 https://doi.org/10.1016/j.sse.2011.05.028	journal	September 2011
Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory Chang, Seo Hyoung; Lee, Shin Buhm; Jeon, Dae Young Advanced Materials, Vol. 23, Issue 35, p. 4063-4067 https://doi.org/10.1002/adma.201102395	journal	August 2011
Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiO _x /TiO _y /TiO _x and Hetero TiO _x /TiON/TiO _x Triple Multilayer Frameworks Bae, Yoon Cheol; Lee, Ah Rahm; Lee, Ja Bin Advanced Functional Materials, Vol. 22, Issue 4 https://doi.org/10.1002/adfm.201102362	journal	December 2011
Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films Shang, Da-Shan; Shi, Lei; Sun, Ji-Rong Nanotechnology, Vol. 22, Issue 25 https://doi.org/10.1088/0957-4484/22/25/254008	journal	May 2011
Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor Miao, Feng; Strachan, John Paul; Yang, J. Joshua Advanced Materials, Vol. 23, Issue 47, p. 5633-5640 https://doi.org/10.1002/adma.201103379	journal	November 2011
Bipolar resistive switching of chromium oxide for resistive random access memory Chen, Shih-Cheng; Chang, Ting-Chang; Chen, Shih-Yang Solid-State Electronics, Vol. 62, Issue 1 https://doi.org/10.1016/j.sse.2010.12.014	journal	August 2011
Electrical Performance and Scalability of Pt Dispersed SiO ₂ Nanometallic Resistance Switch Choi, Byung Joon; Torrezan, Antonio C.; Norris, Kate J. Nano Letters, Vol. 13, Issue 7 https://doi.org/10.1021/nl401283q	journal	June 2013
Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM Ielmini, Daniele; Nardi, Federico; Balatti, Simone IEEE Transactions on Electron Devices, Vol. 59, Issue 8 https://doi.org/10.1109/TED.2012.2199497	journal	August 2012
Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications Jeong, Hu Young; Kim, Jong Yun; Kim, Jeong Won Nano Letters, Vol. 10, Issue 11 https://doi.org/10.1021/nl101902k	journal	November 2010
A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory Lee, Myoung-Jae; Lee, Dongsoo; Cho, Seong-Ho Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms3629	journal	October 2013
Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices Lin, Chih-Yang; Lee, Dai-Ying; Wang, Sheng-Yi Surface and Coatings Technology, Vol. 203, Issue 5-7 https://doi.org/10.1016/j.surfcoat.2008.06.133	journal	December 2008
Continuous Electrical Tuning of the Chemical Composition of TaO_x-Based Memristors Miao, Feng; Yi, Wei; Goldfarb, Ilan ACS Nano, Vol. 6, Issue 3, p. 2312-2318 https://doi.org/10.1021/nn2044577	journal	February 2012
Resistive Switching Behavior and Multiple Transmittance States in Solution-Processed Tungsten Oxide Wu, Wei-Ting; Wu, Jih-Jen; Chen, Jen-Sue ACS Applied Materials & Interfaces, Vol. 3, Issue 7 https://doi.org/10.1021/am200430y	journal	June 2011
Effect of electrode material on the resistance switching of Cu2O film Yang, Woo-Young; Rhee, Shi-Woo Applied Physics Letters, Vol. 91, Issue 23 https://doi.org/10.1063/1.2822403	journal	December 2007
Cause and Prevention of Moisture-Induced Degradation of Resistance Random Access Memory Nanodevices Yang, Xiang; Choi, Byung Joon; Chen, Albert B. K. ACS Nano, Vol. 7, Issue 3 https://doi.org/10.1021/nn3054544	journal	February 2013
Oxide Heterostructure Resistive Memory Yang, Yuchao; Choi, ShinHyun; Lu, Wei Nano Letters, Vol. 13, Issue 6 https://doi.org/10.1021/nl401287w	journal	May 2013
Hysteretic current–voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3∕SrTi0.99Nb0.01O3 Fujii, T.; Kawasaki, M.; Sawa, A. Applied Physics Letters, Vol. 86, Issue 1 https://doi.org/10.1063/1.1845598	journal	January 2005
Electrical properties and colossal electroresistance of heteroepitaxial $Sr Ru O_{3} ∕ Sr {Ti}_{1 - x} {Nb}_{x} O_{3}$ $(0.0002 ⩽ x ⩽ 0.02)$ Schottky junctions Fujii, T.; Kawasaki, M.; Sawa, A. Physical Review B, Vol. 75, Issue 16 https://doi.org/10.1103/PhysRevB.75.165101	journal	April 2007
Excellent resistance switching characteristics of Pt/SrTiO/sub 3/ schottky junction for multi-bit nonvolatile memory application IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. https://doi.org/10.1109/IEDM.2005.1609464	conference	January 2005
Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals Watanabe, Y.; Bednorz, J. G.; Bietsch, A. Applied Physics Letters, Vol. 78, Issue 23 https://doi.org/10.1063/1.1377617	journal	June 2001
Metal and annealing atmospheres dependence of resistive switching in metal/Nb0.7wt%-SrTiO3 interfaces Zhong, Shuai; Cui, Yimin Current Applied Physics, Vol. 13, Issue 5 https://doi.org/10.1016/j.cap.2013.01.021	journal	July 2013
Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 Szot, Krzysztof; Speier, Wolfgang; Bihlmayer, Gustav Nature Materials, Vol. 5, Issue 4 https://doi.org/10.1038/nmat1614	journal	March 2006
Investigation of the electroforming process in resistively switching TiO2 nanocrosspoint junctions Nauenheim, C.; Kuegeler, C.; Ruediger, A. Applied Physics Letters, Vol. 96, Issue 12 https://doi.org/10.1063/1.3367752	journal	March 2010
Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3 Menke, T.; Meuffels, P.; Dittmann, R. Journal of Applied Physics, Vol. 105, Issue 6 https://doi.org/10.1063/1.3100209	journal	March 2009
Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO₃ Thin-Film Memristive Devices Muenstermann, Ruth; Menke, Tobias; Dittmann, Regina Advanced Materials, Vol. 22, Issue 43, p. 4819-4822 https://doi.org/10.1002/adma.201001872	journal	August 2010
Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM Lee, H. Y.; Chen, P. S.; Wu, T. Y. 2008 IEEE International Electron Devices Meeting (IEDM) https://doi.org/10.1109/IEDM.2008.4796677	conference	December 2008
Study on Thermochromic VO ₂ Films Grown on ZnO-Coated Glass Substrates for “Smart Windows” Kato, Kazuhiro; Song, Pung Keun; Odaka, Hidehumi Japanese Journal of Applied Physics, Vol. 42, Issue Part 1, No. 10 https://doi.org/10.1143/JJAP.42.6523	journal	October 2003
Active Terahertz Nanoantennas Based on VO ₂ Phase Transition Seo, Minah; Kyoung, Jisoo; Park, Hyeongryeol Nano Letters, Vol. 10, Issue 6 https://doi.org/10.1021/nl1002153	journal	June 2010
Memory Metamaterials Driscoll, T.; Kim, H. -T.; Chae, B. -G. Science, Vol. 325, Issue 5947 https://doi.org/10.1126/science.1176580	journal	August 2009
Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory Lee, M. -J.; Park, Y.; Suh, D. -S. Advanced Materials, Vol. 19, Issue 22 https://doi.org/10.1002/adma.200700251	journal	November 2007
Oxygen vacancies in ZnO Janotti, Anderson; Van de Walle, Chris G. Applied Physics Letters, Vol. 87, Issue 12 https://doi.org/10.1063/1.2053360	journal	September 2005
Electrical and defect thermodynamic properties of nanocrystalline titanium dioxide Knauth, P.; Tuller, H. L. Journal of Applied Physics, Vol. 85, Issue 2 https://doi.org/10.1063/1.369208	journal	January 1999
HPHA Effect on Reversible Resistive Switching of Pt∕Nb-Doped SrTiO[sub 3] Schottky Junction for Nonvolatile Memory Application Seong, Dong-jun; Jo, Minseok; Lee, Dongsoo Electrochemical and Solid-State Letters, Vol. 10, Issue 6 https://doi.org/10.1149/1.2718396	journal	January 2007
Polarity‐dependent memory switching and behavior of Ag dendrite in Ag‐photodoped amorphous As ₂ S ₃ films Hirose, Yooichi; Hirose, Haruo Journal of Applied Physics, Vol. 47, Issue 6 https://doi.org/10.1063/1.322942	journal	June 1976
Observation of conducting filament growth in nanoscale resistive memories Yang, Yuchao; Gao, Peng; Gaba, Siddharth Nature Communications, Vol. 3, Issue 1 https://doi.org/10.1038/ncomms1737	journal	January 2012
Atomic-scale imaging of nanoengineered oxygen vacancy profiles in SrTiO3 Muller, David A.; Nakagawa, Naoyuki; Ohtomo, Akira Nature, Vol. 430, Issue 7000 https://doi.org/10.1038/nature02756	journal	August 2004
Imaging oxygen defects and their motion at a manganite surface Bryant, B.; Renner, Ch.; Tokunaga, Y. Nature Communications, Vol. 2, Issue 1 https://doi.org/10.1038/ncomms1219	journal	March 2011
Surface and Defect Structure of Oxide Nanowires on ${SrTiO}_{3}$ Marshall, Matthew S. J.; Becerra-Toledo, Andres E.; Marks, Laurence D. Physical Review Letters, Vol. 107, Issue 8 https://doi.org/10.1103/PhysRevLett.107.086102	journal	August 2011
Oxygen Vacancy: The Invisible Agent on Oxide Surfaces Pacchioni, Gianfranco ChemPhysChem, Vol. 4, Issue 10 https://doi.org/10.1002/cphc.200300835	journal	October 2003
Oxygen-Mediated Diffusion of Oxygen Vacancies on the TiO2(110) Surface Schaub, R. Science, Vol. 299, Issue 5605 https://doi.org/10.1126/science.1078962	journal	December 2002
Imaging Intrinsic Diffusion of Bridge-Bonded Oxygen Vacancies on ${TiO}_{2} (110)$ Zhang, Zhenrong; Ge, Qingfeng; Li, Shao-Chun Physical Review Letters, Vol. 99, Issue 12 https://doi.org/10.1103/PhysRevLett.99.126105	journal	September 2007
Anomalous effect due to oxygen vacancy accumulation below the electrode in bipolar resistance switching Pt/Nb:SrTiO ₃ cells Lee, Shinbuhm; Lee, Jae Sung; Park, Jong-Bong APL Materials, Vol. 2, Issue 6 https://doi.org/10.1063/1.4884215	journal	June 2014
Electrocoloration in SrTi $O_{3}$ : Vacancy Drift and Oxidation-Reduction of Transition Metals Blanc, Joseph; Staebler, David L. Physical Review B, Vol. 4, Issue 10 https://doi.org/10.1103/PhysRevB.4.3548	journal	November 1971
Electrocoloration and oxygen vacancy mobility of BaTiO3 Yoo, H. -I.; Chang, M. -W.; Oh, T. -S. Journal of Applied Physics, Vol. 102, Issue 9 https://doi.org/10.1063/1.2802290	journal	November 2007
dc Electrical Degradation of Perovskite-Type Titanates: II, Single Crystals Waser, Rainer; Baiatu, Tudor; Hardtl, Karl-Heinz Journal of the American Ceramic Society, Vol. 73, Issue 6 https://doi.org/10.1111/j.1151-2916.1990.tb09810.x	journal	June 1990
Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers Hasegawa, Tsuyoshi; Terabe, Kazuya; Tsuruoka, Tohru Advanced Materials, Vol. 24, Issue 2 https://doi.org/10.1002/adma.201102597	journal	September 2011
Electrochemical metallization cells—blending nanoionics into nanoelectronics? Lu, Wei; Jeong, Doo Seok; Kozicki, Michael MRS Bulletin, Vol. 37, Issue 2 https://doi.org/10.1557/mrs.2012.5	journal	February 2012
Quantized conductance atomic switch Terabe, K.; Hasegawa, T.; Nakayama, T. Nature, Vol. 433, Issue 7021 https://doi.org/10.1038/nature03190	journal	January 2005
Nanobatteries in redox-based resistive switches require extension of memristor theory Valov, I.; Linn, E.; Tappertzhofen, S. Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms2784	journal	April 2013
Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches Tsuruoka, Tohru; Terabe, Kazuya; Hasegawa, Tsuyoshi Advanced Functional Materials, Vol. 22, Issue 1 https://doi.org/10.1002/adfm.201101846	journal	October 2011
Mechanism for resistive switching in an oxide-based electrochemical metallization memory Peng, Shanshan; Zhuge, Fei; Chen, Xinxin Applied Physics Letters, Vol. 100, Issue 7 https://doi.org/10.1063/1.3683523	journal	February 2012
Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories Schindler, C.; Staikov, G.; Waser, R. Applied Physics Letters, Vol. 94, Issue 7 https://doi.org/10.1063/1.3077310	journal	February 2009
Low current resistive switching in Cu–SiO2 cells Schindler, C.; Weides, M.; Kozicki, M. N. Applied Physics Letters, Vol. 92, Issue 12 https://doi.org/10.1063/1.2903707	journal	March 2008
Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems Guo, Xin; Schindler, Christina; Menzel, Stephan Applied Physics Letters, Vol. 91, Issue 13 https://doi.org/10.1063/1.2793686	journal	September 2007
On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt Guan, Weihua; Liu, Ming; Long, Shibing Applied Physics Letters, Vol. 93, Issue 22 https://doi.org/10.1063/1.3039079	journal	December 2008
Time-dependent current-voltage curves during the forming process in unipolar resistance switching Lee, S. B.; Yoo, H. K.; Chang, S. H. Applied Physics Letters, Vol. 98, Issue 5 https://doi.org/10.1063/1.3552676	journal	January 2011
Two opposite hysteresis curves in semiconductors with mobile dopants Sung Lee, Jae; Buhm Lee, Shin; Kahng, Byungnam Applied Physics Letters, Vol. 102, Issue 25 https://doi.org/10.1063/1.4811556	journal	June 2013
Multiscale simulation on electromigration of the oxygen vacancies in metal oxides Jeon, Sang Ho; Son, Won-Joon; Park, Bae Ho Applied Physics A, Vol. 102, Issue 4 https://doi.org/10.1007/s00339-011-6272-9	journal	January 2011
Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches Menzel, Stephan; Waters, Matthias; Marchewka, Astrid Advanced Functional Materials, Vol. 21, Issue 23 https://doi.org/10.1002/adfm.201101117	journal	September 2011
Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells Schroeder, Herbert; Zhirnov, Victor V.; Cavin, Ralph K. Journal of Applied Physics, Vol. 107, Issue 5 https://doi.org/10.1063/1.3319591	journal	March 2010
Exponential ionic drift: fast switching and low volatility of thin-film memristors Strukov, Dmitri B.; Williams, R. Stanley Applied Physics A, Vol. 94, Issue 3 https://doi.org/10.1007/s00339-008-4975-3	journal	November 2008
Study of the negative resistance phenomenon in transition metal oxide films from a statistical mechanics point of view Jeong, Doo Seok; Choi, Byung Joon; Hwang, Cheol Seong Journal of Applied Physics, Vol. 100, Issue 11 https://doi.org/10.1063/1.2399332	journal	January 2006
The switching location of a bipolar memristor: chemical, thermal and structural mapping Strachan, John Paul; Strukov, Dmitri B.; Borghetti, Julien Nanotechnology, Vol. 22, Issue 25 https://doi.org/10.1088/0957-4484/22/25/254015	journal	May 2011
Current-controlled negative differential resistance due to Joule heating in TiO ₂ Alexandrov, A. S.; Bratkovsky, A. M.; Bridle, B. Applied Physics Letters, Vol. 99, Issue 20 https://doi.org/10.1063/1.3660229	journal	November 2011
Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM Liu, Qi; Sun, Jun; Lv, Hangbing Advanced Materials, Vol. 24, Issue 14 https://doi.org/10.1002/adma.201104104	journal	March 2012
Molecular dynamics simulations of oxide memristors: thermal effects Savel’ev, S. E.; Alexandrov, A. S.; Bratkovsky, A. M. Applied Physics A, Vol. 102, Issue 4 https://doi.org/10.1007/s00339-011-6293-4	journal	February 2011
Molecular dynamics simulations of oxide memristors: Crystal field effects Savel’ev, S. E.; Alexandrov, A. S.; Bratkovsky, A. M. Applied Physics Letters, Vol. 99, Issue 5 https://doi.org/10.1063/1.3622665	journal	August 2011
Large 1/f noise of unipolar resistance switching and its percolating nature Lee, S. B.; Park, S.; Lee, J. S. Applied Physics Letters, Vol. 95, Issue 12 https://doi.org/10.1063/1.3237167	journal	September 2009
Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution Inoue, I. H.; Yasuda, S.; Akinaga, H. Physical Review B, Vol. 77, Issue 3 https://doi.org/10.1103/PhysRevB.77.035105	journal	January 2008
Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications Cao, Xun; Li, Xiaomin; Gao, Xiangdong Journal of Applied Physics, Vol. 106, Issue 7 https://doi.org/10.1063/1.3236573	journal	October 2009
Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications Chang, Wen-Yuan; Lai, Yen-Chao; Wu, Tai-Bor Applied Physics Letters, Vol. 92, Issue 2 https://doi.org/10.1063/1.2834852	journal	January 2008
Unipolar resistive switching behavior of BiFeO3 thin films prepared by chemical solution deposition Chen, Shih-Wei; Wu, Jenn-Ming Thin Solid Films, Vol. 519, Issue 1 https://doi.org/10.1016/j.tsf.2010.08.004	journal	October 2010
Resistive switching of silicon-rich-oxide featuring high compatibility with CMOS technology for 3D stackable and embedded applications Huang, Ru; Zhang, Lijie; Gao, Dejin Applied Physics A, Vol. 102, Issue 4 https://doi.org/10.1007/s00339-011-6310-7	journal	March 2011
Resistive Switching in Pt∕Al[sub 2]O[sub 3]∕TiO[sub 2]∕Ru Stacked Structures Kim, Kyung Min; Choi, Byung Joon; Koo, Bon Wook Electrochemical and Solid-State Letters, Vol. 9, Issue 12 https://doi.org/10.1149/1.2353899	journal	January 2006
Effects of Ultraviolet Illumination on Resistive Switching Properties of Cu _x O Thin Film Liu, Chih-Yi; Hsu, Jing-Ming Japanese Journal of Applied Physics, Vol. 49, Issue 8 https://doi.org/10.1143/JJAP.49.084202	journal	August 2010
Resistive switching characteristics of MnO _x -based ReRAM Zhang, Sen; Long, Shibing; Guan, Weihua Journal of Physics D: Applied Physics, Vol. 42, Issue 5 https://doi.org/10.1088/0022-3727/42/5/055112	journal	February 2009
Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories Chen, Jui-Yuan; Hsin, Cheng-Lun; Huang, Chun-Wei Nano Letters, Vol. 13, Issue 8 https://doi.org/10.1021/nl4015638	journal	July 2013
Collective Motion of Conducting Filaments in Pt/n-Type TiO2/p-Type NiO/Pt Stacked Resistance Switching Memory Kim, Kyung Min; Song, Seul Ji; Kim, Gun Hwan Advanced Functional Materials, Vol. 21, Issue 9 https://doi.org/10.1002/adfm.201002282	journal	March 2011
Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching IEEE Transactions on Nanotechnology, Vol. 9, Issue 2 https://doi.org/10.1109/TNANO.2010.2041670	journal	March 2010
Scaling Theory for Unipolar Resistance Switching Lee, J. S.; Lee, S. B.; Chang, S. H. Physical Review Letters, Vol. 105, Issue 20 https://doi.org/10.1103/PhysRevLett.105.205701	journal	November 2010
Resistance switching in the metal deficient-type oxides: NiO and CoO Shima, Hisashi; Takano, Fumiyoshi; Akinaga, Hiro Applied Physics Letters, Vol. 91, Issue 1 https://doi.org/10.1063/1.2753101	journal	July 2007
Relations between the concentrations of imperfections in solids Kröger, F. A.; Vink, H. J. Journal of Physics and Chemistry of Solids, Vol. 5, Issue 3 https://doi.org/10.1016/0022-3697(58)90069-6	journal	May 1958
Reversible changes between bipolar and unipolar resistance-switching phenomena in a Pt/SrTiOx/Pt cell Lee, Shin Buhm; Chang, Seo Hyoung; Yoo, Hyang Keun Current Applied Physics, Vol. 12, Issue 6 https://doi.org/10.1016/j.cap.2012.04.030	journal	November 2012
The conical shape filament growth model in unipolar resistance switching of TiO2 thin film Kim, Kyung Min; Hwang, Cheol Seong Applied Physics Letters, Vol. 94, Issue 12 https://doi.org/10.1063/1.3108088	journal	March 2009
Dual Conical Conducting Filament Model in Resistance Switching TiO2 Thin Films Kim, Kyung Min; Park, Tae Hyung; Hwang, Cheol Seong Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep07844	journal	January 2015
The Art and Science of Constructing a Memristor Model Williams, R. Stanley; Pickett, Matthew D. Memristors and Memristive Systems https://doi.org/10.1007/978-1-4614-9068-5_3	book	November 2013
Isothermal Switching and Detailed Filament Evolution in Memristive Systems Mickel, Patrick R.; Lohn, Andrew J.; James, Conrad D. Advanced Materials, Vol. 26, Issue 26, p. 4486-4490 https://doi.org/10.1002/adma.201306182	journal	April 2014
Phenomenological modeling of memristive devices Merrikh Bayat, F.; Hoskins, B.; Strukov, D. B. Applied Physics A, Vol. 118, Issue 3 https://doi.org/10.1007/s00339-015-8993-7	journal	January 2015
Low voltage two-state-variable memristor model of vacancy-drift resistive switches Zhang, Lu; Ge, Ning; Joshua Yang, J. Applied Physics A, Vol. 119, Issue 1 https://doi.org/10.1007/s00339-015-9033-3	journal	February 2015
A physical model of switching dynamics in tantalum oxide memristive devices Mickel, Patrick R.; Lohn, Andrew J.; Joon Choi, Byung Applied Physics Letters, Vol. 102, Issue 22, Article No. 223502 https://doi.org/10.1063/1.4809530	journal	June 2013
Heat Dissipation in Resistive Switching Devices: Comparison of Thermal Simulations and Experimental Results Yalon, Eilam; Riess, Ilan; Ritter, Dan IEEE Transactions on Electron Devices, Vol. 61, Issue 4 https://doi.org/10.1109/TED.2014.2305175	journal	April 2014
A Control Strategy for Parallel Operation of Single-Phase Voltage Source Inverters: Analysis, Design and Experimental Results Lazzarin, Telles B.; Bauer, Guilherme A. T.; Barbi, Ivo IEEE Transactions on Industrial Electronics, Vol. 60, Issue 6 https://doi.org/10.1109/TIE.2012.2193856	journal	June 2013
O-Ti (Oxygen-Titanium) Okamoto, H. Journal of Phase Equilibria, Vol. 22, Issue 4 https://doi.org/10.1361/105497101770338635	journal	August 2001
Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM Russo, U.; Ielmini, D.; Cagli, C. 2007 IEEE International Electron Devices Meeting https://doi.org/10.1109/IEDM.2007.4419062	conference	December 2007
First-principles modeling of resistance switching in perovskite oxide material Jeon, Sang Ho; Park, Bae Ho; Lee, Jaichan Applied Physics Letters, Vol. 89, Issue 4 https://doi.org/10.1063/1.2234840	journal	July 2006
Mechanism for bipolar switching in a $Pt / {TiO}_{2} / Pt$ resistive switching cell Jeong, Doo Seok; Schroeder, Herbert; Waser, Rainer Physical Review B, Vol. 79, Issue 19 https://doi.org/10.1103/PhysRevB.79.195317	journal	May 2009
Intrinsic Mechanisms of Memristive Switching Nagashima, Kazuki; Yanagida, Takeshi; Oka, Keisuke Nano Letters, Vol. 11, Issue 5 https://doi.org/10.1021/nl200707n	journal	May 2011
Magnetoelectric Devices for Spintronics Fusil, S.; Garcia, V.; Barthélémy, A. Annual Review of Materials Research, Vol. 44, Issue 1 https://doi.org/10.1146/annurev-matsci-070813-113315	journal	July 2014
Ferroelectric tunnel junctions for information storage and processing Garcia, Vincent; Bibes, Manuel Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms5289	journal	July 2014
Lowering the Temperature of Solid Oxide Fuel Cells Wachsman, E. D.; Lee, K. T. Science, Vol. 334, Issue 6058 https://doi.org/10.1126/science.1204090	journal	November 2011
Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films Yang, C. -H.; Seidel, J.; Kim, S. Y. Nature Materials, Vol. 8, Issue 6 https://doi.org/10.1038/nmat2432	journal	April 2009
An ionic bottle for high-speed, long-retention memristive devices Strukov, Dmitri B.; Williams, R. Stanley Applied Physics A, Vol. 102, Issue 4 https://doi.org/10.1007/s00339-011-6321-4	journal	February 2011
Atomic-Scale Analysis of the Oxygen Configuration at a ${SrTiO}_{3}$ Dislocation Core Jia, C. L.; Thust, A.; Urban, K. Physical Review Letters, Vol. 95, Issue 22 https://doi.org/10.1103/PhysRevLett.95.225506	journal	November 2005
Localized Metallic Conductivity and Self-Healing during Thermal Reduction of ${SrTiO}_{3}$ Szot, K.; Speier, W.; Carius, R. Physical Review Letters, Vol. 88, Issue 7 https://doi.org/10.1103/PhysRevLett.88.075508	journal	February 2002
Atomic and electronic characterization of the $a [100]$ dislocation core in ${SrTiO}_{3}$ Zhang, Zaoli; Sigle, Wilfried; Rühle, Manfred Physical Review B, Vol. 66, Issue 9 https://doi.org/10.1103/PhysRevB.66.094108	journal	September 2002
Colossal Ionic Conductivity at Interfaces of Epitaxial ZrO2:Y2O3/SrTiO3 Heterostructures Garcia-Barriocanal, J.; Rivera-Calzada, A.; Varela, M. Science, Vol. 321, Issue 5889 https://doi.org/10.1126/science.1156393	journal	August 2008
Electrical Modulation of the Local Conduction at Oxide Tubular Interfaces Hsieh, Ying-Hui; Strelcov, Evgheni; Liou, Jia-Ming ACS Nano, Vol. 7, Issue 10 https://doi.org/10.1021/nn402763w	journal	September 2013
Novel Electroforming-Free Nanoscaffold Memristor with Very High Uniformity, Tunability, and Density Lee, Shinbuhm; Sangle, Abhijeet; Lu, Ping Advanced Materials, Vol. 26, Issue 36 https://doi.org/10.1002/adma.201401917	journal	July 2014
Elastic strain at interfaces and its influence on ionic conductivity in nanoscaled solid electrolyte thin films—theoretical considerations and experimental studies Schichtel, N.; Korte, C.; Hesse, D. Physical Chemistry Chemical Physics, Vol. 11, Issue 17 https://doi.org/10.1039/b900148d	journal	January 2009
Vertically aligned nanocomposite electrolytes with superior out-of-plane ionic conductivity for solid oxide fuel cells Su, Qing; Yoon, Daeil; Chen, Aiping Journal of Power Sources, Vol. 242 https://doi.org/10.1016/j.jpowsour.2013.05.137	journal	November 2013
“Stretching” the energy landscape of oxides—Effects on electrocatalysis and diffusion Yildiz, Bilge MRS Bulletin, Vol. 39, Issue 2 https://doi.org/10.1557/mrs.2014.8	journal	February 2014
A Review on Conduction Mechanisms in Dielectric Films Chiu, Fu-Chien Advances in Materials Science and Engineering, Vol. 2014 https://doi.org/10.1155/2014/578168	journal	January 2014
Physics of Semiconductor Devices Sze, S. M.; Ng, Kwok K. https://doi.org/10.1002/0470068329	book	January 2007
Bipolar Resistance Switching in Transparent ITO/LaAlO ₃ /SrTiO ₃ Memristors Wu, Shuxiang; Ren, Lizhu; Qing, Jian ACS Applied Materials & Interfaces, Vol. 6, Issue 11 https://doi.org/10.1021/am501387w	journal	May 2014
Modeling of leakage currents in high-κ dielectrics: Three-dimensional approach via kinetic Monte Carlo Jegert, Gunther; Kersch, Alfred; Weinreich, Wenke Applied Physics Letters, Vol. 96, Issue 6 https://doi.org/10.1063/1.3310065	journal	February 2010
Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for $\hbox{SiO}_{2}$-Based Structure Chen, Yu-Ting; Chang, Ting-Chang; Yang, Po-Chun IEEE Electron Device Letters, Vol. 34, Issue 2 https://doi.org/10.1109/LED.2012.2232276	journal	February 2013
Resistive switching characteristics and mechanism of thermally grown WO _x thin films Biju, Kuyyadi P.; Liu, Xinjun; Siddik, Manzar Journal of Applied Physics, Vol. 110, Issue 6 https://doi.org/10.1063/1.3633227	journal	September 2011
Trap-controlled space-charge-limited current mechanism in resistance switching at Al∕Pr0.7Ca0.3MnO3 interface Harada, T.; Ohkubo, I.; Tsubouchi, K. Applied Physics Letters, Vol. 92, Issue 22 https://doi.org/10.1063/1.2938049	journal	June 2008
Field-induced resistive switching based on space-charge-limited current Xia, Yidong; He, Weiye; Chen, Liang Applied Physics Letters, Vol. 90, Issue 2 https://doi.org/10.1063/1.2430912	journal	January 2007
Conduction Mechanism and Low Frequency Noise Analysis in Al/Pr _0.7 Ca _0.3 MnO ₃ for Bipolar Resistive Switching Lee, Myoung-Sun; Lee, Jung-Kyu; Hwang, Hyun-Sang Japanese Journal of Applied Physics, Vol. 50, Issue 1R https://doi.org/10.7567/JJAP.50.011501	journal	January 2011
Trap-assisted tunneling resistance switching effect in CeO ₂ /La _0.7 (Sr _0.1 Ca _0.9 ) _0.3 MnO ₃ heterostructure Chen, X. G.; Fu, J. B.; Liu, S. Q. Applied Physics Letters, Vol. 101, Issue 15 https://doi.org/10.1063/1.4760221	journal	October 2012
Conduction mechanism of TiN/HfO _x /Pt resistive switching memory: A trap-assisted-tunneling model Yu, Shimeng; Guan, Ximeng; Wong, H. -S. Philip Applied Physics Letters, Vol. 99, Issue 6 https://doi.org/10.1063/1.3624472	journal	August 2011
Bipolar resistive switching based on SrTiO ₃ /YBa ₂ Cu ₃ O ₇ epi-layers Li, Kun; Wen, Zheng; Wu, Di Journal of Physics D: Applied Physics, Vol. 46, Issue 3 https://doi.org/10.1088/0022-3727/46/3/035308	journal	December 2012
Carrier Transport and Multilevel Switching Mechanism for Chromium Oxide Resistive Random-Access Memory Chen, Shih-Cheng; Chang, Ting-Chang; Chen, Shih-Yang Electrochemical and Solid-State Letters, Vol. 14, Issue 2 https://doi.org/10.1149/1.3518710	journal	January 2011
Colossal electroresistance of a $\Pr_{0.7} {Ca}_{0.3} Mn O_{3}$ thin film at room temperature Odagawa, A.; Sato, H.; Inoue, I. H. Physical Review B, Vol. 70, Issue 22 https://doi.org/10.1103/PhysRevB.70.224403	journal	December 2004
Effect of carrier trapping on the hysteretic current-voltage characteristics in $Ag ∕ {La}_{0.7} {Ca}_{0.3} {MnO}_{3} ∕ Pt$ heterostructures Shang, D. S.; Wang, Q.; Chen, L. D. Physical Review B, Vol. 73, Issue 24 https://doi.org/10.1103/PhysRevB.73.245427	journal	June 2006
Temperature dependence of current-voltage characteristics of Ag–La0.7Ca0.3MnO3–Pt heterostructures Shang, D. S.; Chen, L. D.; Wang, Q. Applied Physics Letters, Vol. 89, Issue 17 https://doi.org/10.1063/1.2364055	journal	October 2006
Bipolar resistive switching behavior of La _0.5 Sr _0.5 CoO _3−σ films for nonvolatile memory applications Fu, Y. J.; Xia, F. J.; Jia, Y. L. Applied Physics Letters, Vol. 104, Issue 22 https://doi.org/10.1063/1.4881720	journal	June 2014
Electrically configurable electroforming and bipolar resistive switching in Pt/TiO ₂ /Pt structures Kim, Kyung Min; Kim, Gun Hwan; Song, Seul Ji Nanotechnology, Vol. 21, Issue 30 https://doi.org/10.1088/0957-4484/21/30/305203	journal	July 2010
Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device Chen, C.; Yang, Y. C.; Zeng, F. Applied Physics Letters, Vol. 97, Issue 8 https://doi.org/10.1063/1.3483158	journal	August 2010
Scaling limits of resistive memories Zhirnov, Victor V.; Meade, Roy; Cavin, Ralph K. Nanotechnology, Vol. 22, Issue 25 https://doi.org/10.1088/0957-4484/22/25/254027	journal	May 2011
Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere Jeong, Doo Seok; Schroeder, Herbert; Breuer, Uwe Journal of Applied Physics, Vol. 104, Issue 12 https://doi.org/10.1063/1.3043879	journal	December 2008
Nanostructured resistive memory cells based on 8-nm-thin TiO2 films deposited by atomic layer deposition Kügeler, C.; Zhang, J.; Hoffmann-Eifert, S. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 29, Issue 1 https://doi.org/10.1116/1.3536487	journal	January 2011
Resistive Switching in Single Epitaxial ZnO Nanoislands Qi, Jing; Olmedo, Mario; Ren, Jingjian ACS Nano, Vol. 6, Issue 2 https://doi.org/10.1021/nn204809a	journal	January 2012
A Family of Electronically Reconfigurable Nanodevices Yang, J. Joshua; Borghetti, Julien; Murphy, David Advanced Materials, Vol. 21, Issue 37 https://doi.org/10.1002/adma.200900822	journal	October 2009
Interpretation of set and reset switching in nickel oxide thin films Yoo, In Kyeong; Lee, Myoung-Jae; Seo, David H. Applied Physics Letters, Vol. 104, Issue 22 https://doi.org/10.1063/1.4880796	journal	June 2014
Percolation processes: I. Crystals and mazes Broadbent, S. R.; Hammersley, J. M. Mathematical Proceedings of the Cambridge Philosophical Society, Vol. 53, Issue 3 https://doi.org/10.1017/S0305004100032680	journal	July 1957
Classical Transport in Disordered Media: Scaling and Effective-Medium Theories Kirkpatrick, Scott Physical Review Letters, Vol. 27, Issue 25 https://doi.org/10.1103/PhysRevLett.27.1722	journal	December 1971
Breakdown properties of quenched random systems: The random-fuse network Duxbury, P. M.; Leath, P. L.; Beale, Paul D. Physical Review B, Vol. 36, Issue 1 https://doi.org/10.1103/PhysRevB.36.367	journal	July 1987
A physics/circuit-based switching model for carbon-based resistive memory with sp2/sp3 cluster conversion Qin, Shengjun; Zhang, Jinyu; Fu, Di Nanoscale, Vol. 4, Issue 20 https://doi.org/10.1039/c2nr31180a	journal	January 2012
Abnormal resistance switching behaviours of NiO thin films: possible occurrence of both formation and rupturing of conducting channels Liu, Chunli; Chae, S. C.; Lee, J. S. Journal of Physics D: Applied Physics, Vol. 42, Issue 1 https://doi.org/10.1088/0022-3727/42/1/015506	journal	December 2008
Statistical properties of the electrically induced contact resistance between two stainless steel balls Kim, Sang-Kuk; Sung Lee, Jae; Kwak, Han Applied Physics Letters, Vol. 102, Issue 24 https://doi.org/10.1063/1.4811354	journal	June 2013
Dual random circuit breaker network model with equivalent thermal circuit network Kim, Kwanyong; Yoon, Seong Jun; Choi, Woo Young Applied Physics Express, Vol. 7, Issue 2 https://doi.org/10.7567/APEX.7.024203	journal	January 2014
A unified model for unipolar resistive random access memory Lee, Kwangseok; Jang, Jung-Shik; Kwon, Yongwoo Applied Physics Letters, Vol. 100, Issue 8 https://doi.org/10.1063/1.3688944	journal	February 2012
Area and Thickness Scaling of Forming Voltage of Resistive Switching Memories Chen, An IEEE Electron Device Letters, Vol. 35, Issue 1 https://doi.org/10.1109/LED.2013.2288262	journal	January 2014
Statistical Model and Rapid Prediction of RRAM SET Speed–Disturb Dilemma Luo, Wun-Cheng; Liu, Jen-Chieh; Lin, Yen-Chuan IEEE Transactions on Electron Devices, Vol. 60, Issue 11 https://doi.org/10.1109/TED.2013.2281991	journal	November 2013
Analysis and modeling of resistive switching statistics Long, Shibing; Cagli, Carlo; Ielmini, Daniele Journal of Applied Physics, Vol. 111, Issue 7 https://doi.org/10.1063/1.3699369	journal	April 2012
Evaluation of the lifetime and failure probability for inter-poly oxides from RVS measurements Martin, Andreas; O'Sullivan, Paula; Mathewson, Alan Microelectronics Journal, Vol. 25, Issue 7 https://doi.org/10.1016/0026-2692(94)90040-X	journal	October 1994
Low-frequency fluctuations in solids: $\frac{1}{f}$ noise Dutta, P.; Horn, P. M. Reviews of Modern Physics, Vol. 53, Issue 3 https://doi.org/10.1103/RevModPhys.53.497	journal	July 1981
$\frac{1}{f}$ noise and other slow, nonexponential kinetics in condensed matter Weissman, M. B. Reviews of Modern Physics, Vol. 60, Issue 2 https://doi.org/10.1103/RevModPhys.60.537	journal	April 1988
Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis Yu, Shimeng; Jeyasingh, Rakesh 2011 IEEE International Electron Devices Meeting (IEDM), 2011 International Electron Devices Meeting https://doi.org/10.1109/IEDM.2011.6131537	conference	December 2011
Nonlinear behavior and 1/ f noise near a conductivity threshold: Effects of local microgeometry Bergman, David J. Physical Review B, Vol. 39, Issue 7 https://doi.org/10.1103/PhysRevB.39.4598	journal	March 1989
Flicker ( $\frac{1}{f}$ ) Noise in Percolation Networks: A New Hierarchy of Exponents Rammal, R.; Tannous, C.; Breton, P. Physical Review Letters, Vol. 54, Issue 15 https://doi.org/10.1103/PhysRevLett.54.1718	journal	April 1985
Resistance noise in nonlinear resistor networks Rammal, R.; Tremblay, A. -M. S. Physical Review Letters, Vol. 58, Issue 4 https://doi.org/10.1103/PhysRevLett.58.415	journal	January 1987
Effects of compliance currents on the formation and rupture of conducting filaments in unipolar resistive switching of CoO film Wang, Z. Q.; Li, X. H.; Xu, H. Y. Journal of Physics D: Applied Physics, Vol. 43, Issue 38 https://doi.org/10.1088/0022-3727/43/38/385105	journal	September 2010
Third-harmonic generation in semicontinuous metal films Yagil, Yoad; Deutscher, Guy Physical Review B, Vol. 46, Issue 24 https://doi.org/10.1103/PhysRevB.46.16115	journal	December 1992
Scaling behaviors for resistive memory switching in NiO nanowire devices In Kim, Sung; Ho Sa, Young; Kim, Joo-Hyung Applied Physics Letters, Vol. 104, Issue 2 https://doi.org/10.1063/1.4862751	journal	January 2014
Structure and growth mechanism of mineral dendrites Chopard, B.; Herrmann, H. J.; Vicsek, T. Nature, Vol. 353, Issue 6343 https://doi.org/10.1038/353409a0	journal	October 1991
Fractal Dimension of Dielectric Breakdown Niemeyer, L.; Pietronero, L.; Wiesmann, H. J. Physical Review Letters, Vol. 52, Issue 12 https://doi.org/10.1103/PhysRevLett.52.1033	journal	March 1984
Fractal growth processes Sander, Leonard M. Nature, Vol. 322, Issue 6082 https://doi.org/10.1038/322789a0	journal	August 1986
Mass transport in chalcogenide electrolyte films – materials and applications Kozicki, Michael N.; Mitkova, Maria Journal of Non-Crystalline Solids, Vol. 352, Issue 6-7, p. 567-577 https://doi.org/10.1016/j.jnoncrysol.2005.11.065	journal	May 2006
Theory of Fractal Growth Pietronero, L.; Erzan, A.; Evertsz, C. Physical Review Letters, Vol. 61, Issue 7 https://doi.org/10.1103/PhysRevLett.61.861	journal	August 1988
Simulation of Electric Breakdown and Resulting Variant of Percolation Fractals Takayasu, Hideki Physical Review Letters, Vol. 54, Issue 11 https://doi.org/10.1103/PhysRevLett.54.1099	journal	March 1985
Diffusion-limited aggregation as branched growth Halsey, Thomas C. Physical Review Letters, Vol. 72, Issue 8 https://doi.org/10.1103/PhysRevLett.72.1228	journal	February 1994
Application of experimental and numerical models to the physics of multiparticle systems Meakin, Paul; Skjeltorp, Arne T. Advances in Physics, Vol. 42, Issue 1 https://doi.org/10.1080/00018739300101464	journal	February 1993
Diffusion-Limited Aggregation, a Kinetic Critical Phenomenon Witten, T. A.; Sander, L. M. Physical Review Letters, Vol. 47, Issue 19 https://doi.org/10.1103/PhysRevLett.47.1400	journal	November 1981
Logarithmic voltage anomalies in random resistor networks Kahng, B.; Batrouni, G. G.; Redner, S. Journal of Physics A: Mathematical and General, Vol. 20, Issue 13 https://doi.org/10.1088/0305-4470/20/13/004	journal	September 1987
Threshold Switching and Conductance Quantization in Al/HfO ₂ /Si(p) Structures Saura, Xavier; Miranda, Enrique; Jiménez, David Japanese Journal of Applied Physics, Vol. 52, Issue 4S https://doi.org/10.7567/JJAP.52.04CD06	journal	April 2013
Coexistence of the bipolar and unipolar resistive switching behaviors in vanadium doped ZnO films Xu, Dinglin; Xiong, Ying; Tang, Minghua Journal of Alloys and Compounds, Vol. 584 https://doi.org/10.1016/j.jallcom.2013.09.073	journal	January 2014
Coexistence of unipolar and bipolar resistive switching in Pt/NiO/Pt Choi, Dooho; Soo Kim, Chang Applied Physics Letters, Vol. 104, Issue 19 https://doi.org/10.1063/1.4875918	journal	May 2014
Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model Sato, Yoshihiro; Kinoshita, Kentaro; Aoki, Masaki Applied Physics Letters, Vol. 90, Issue 3 https://doi.org/10.1063/1.2431792	journal	January 2007
Resistive Switching Properties of Sol–Gel-Derived V-Doped SrTiO3 Thin Films Tang, Zhen Hua; Xiong, Ying; Xu, Ding Lin Journal of Electronic Materials, Vol. 42, Issue 8 https://doi.org/10.1007/s11664-013-2600-5	journal	April 2013
Coexistence of the bipolar and unipolar resistive switching behaviours in Au/SrTiO ₃ /Pt cells Sun, Xianwen; Li, Guoqiang; Zhang, Xin'an Journal of Physics D: Applied Physics, Vol. 44, Issue 12 https://doi.org/10.1088/0022-3727/44/12/125404	journal	March 2011
Bipolar and unipolar resistive switching in Zn _0.98 Cu _0.02 O films Xu, Qingyu; Wen, Zheng; Wu, Di Journal of Physics D: Applied Physics, Vol. 44, Issue 33 https://doi.org/10.1088/0022-3727/44/33/335104	journal	August 2011
Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices Lee, Seunghyup; Kim, Heejin; Yun, Dong-Jin Applied Physics Letters, Vol. 95, Issue 26 https://doi.org/10.1063/1.3280864	journal	December 2009
Bipolar and unipolar resistive switching modes in Pt/Zn _0.99 Zr _0.01 O/Pt structure for multi-bit resistance random access memory Xu, D. L.; Xiong, Y.; Tang, M. H. Applied Physics Letters, Vol. 104, Issue 18 https://doi.org/10.1063/1.4875383	journal	May 2014
Polarity dependence of forming step on improved performance in Ti/HfOx/W with dual resistive switching mode Chen, Pang-Shiu; Chen, Yu-Sheng; Tsai, Kan-Hsueh Microelectronic Engineering, Vol. 112 https://doi.org/10.1016/j.mee.2013.04.005	journal	December 2013
Self-Selection Unipolar $\hbox{HfO}_{x}$ -Based RRAM Tran, X. A.; Zhu, W.; Liu, W. J. IEEE Transactions on Electron Devices, Vol. 60, Issue 1 https://doi.org/10.1109/TED.2012.2223821	journal	January 2013
Coexistence of Bipolar and Unipolar Switching of Cu and Oxygen Vacancy Nanofilaments in Cu/TaOx/Pt Resistive Devices Liu, T.; Verma, M.; Kang, Y. ECS Solid State Letters, Vol. 1, Issue 1 https://doi.org/10.1149/2.012201ssl	journal	January 2012
Coexistence of unipolar and bipolar resistive switching in BiFeO ₃ and Bi _0.8 Ca _0.2 FeO ₃ films Liu, Lu; Zhang, Shantao; Luo, Ying Journal of Applied Physics, Vol. 111, Issue 10 https://doi.org/10.1063/1.4716867	journal	May 2012
Nonvolatile Memory with Multilevel Switching: A Basic Model Rozenberg, M. J.; Inoue, I. H.; Sánchez, M. J. Physical Review Letters, Vol. 92, Issue 17 https://doi.org/10.1103/PhysRevLett.92.178302	journal	April 2004
High-Throughput Characterization of Metal Electrode Performance for Electric-Field-Induced Resistance Switching in Metal/Pr0.7Ca0.3MnO3/Metal Structures Tsubouchi, K.; Ohkubo, I.; Kumigashira, H. Advanced Materials, Vol. 19, Issue 13 https://doi.org/10.1002/adma.200601957	journal	July 2007
Conversion from unipolar to bipolar resistance switching by inserting Ta2O5 layer in Pt/TaOx/Pt cells Yoo, H. K.; Lee, S. B.; Lee, J. S. Applied Physics Letters, Vol. 98, Issue 18 https://doi.org/10.1063/1.3587809	journal	May 2011
Origin of the OFF state variability in ReRAM cells Salaoru, Iulia; Khiat, Ali; Li, Qingjiang Journal of Physics D: Applied Physics, Vol. 47, Issue 14 https://doi.org/10.1088/0022-3727/47/14/145102	journal	March 2014
Understanding of the Switching Mechanism of a Pt/Ni-Doped SrTiO ₃ Junction via Current–Voltage and Capacitance–Voltage Measurements Seong, Dong-jun; Lee, Dongsoo; Pyun, Myungbum Japanese Journal of Applied Physics, Vol. 47, Issue 12 https://doi.org/10.1143/JJAP.47.8749	journal	December 2008
Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour Aoki, Yoshitaka; Wiemann, Carsten; Feyer, Vitaliy Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms4473	journal	March 2014
Impact of Defect Distribution on Resistive Switching Characteristics of Sr₂TiO₄ Thin Films Shibuya, Keisuke; Dittmann, Regina; Mi, Shaobo Advanced Materials, Vol. 22, Issue 3, p. 411-414 https://doi.org/10.1002/adma.200901493	journal	January 2010
Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells Sun, Xianwen; Li, Guoqiang; Chen, Li Nanoscale Research Letters, Vol. 6, Issue 1 https://doi.org/10.1186/1556-276X-6-599	journal	January 2011
Physics gets its hands dirty Nature Materials, Vol. 14, Issue 4, p. 361-361 https://doi.org/10.1038/nmat4268	journal	March 2015
Observation of two resistance switching modes in TiO ₂ memristive devices electroformed at low current Miao, Feng; Joshua Yang, J.; Borghetti, Julien Nanotechnology, Vol. 22, Issue 25 https://doi.org/10.1088/0957-4484/22/25/254007	journal	May 2011
Device scaling limits of Si MOSFETs and their application dependencies Frank, D. J.; Dennard, R. H.; Nowak, E. Proceedings of the IEEE, Vol. 89, Issue 3 https://doi.org/10.1109/5.915374	journal	March 2001
Recent progress in resistive random access memories: Materials, switching mechanisms, and performance Pan, F.; Gao, S.; Chen, C. Materials Science and Engineering: R: Reports, Vol. 83 https://doi.org/10.1016/j.mser.2014.06.002	journal	September 2014
Complementary resistive switches for passive nanocrossbar memories Linn, Eike; Rosezin, Roland; Kügeler, Carsten Nature Materials, Vol. 9, Issue 5 https://doi.org/10.1038/nmat2748	journal	April 2010
Highly Uniform Bipolar Resistive Switching With $ \hbox{Al}_{2}\hbox{O}_{3}$ Buffer Layer in Robust NbAlO-Based RRAM IEEE Electron Device Letters, Vol. 31, Issue 4 https://doi.org/10.1109/LED.2010.2041183	journal	April 2010
Bottom Electrode Modification of ZrO ₂ Resistive Switching Memory Device with Au Nanodots Lee, Dai-Ying; Yao, I-Chuan; Tseng, Tseung-Yuen Japanese Journal of Applied Physics, Vol. 51, Issue 2S https://doi.org/10.7567/JJAP.51.02BJ04	journal	February 2012
Flash Memories Cappelletti, Paulo; Golla, Carla; Olivo, Piero https://doi.org/10.1007/978-1-4615-5015-0	book	January 1999
Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications Lee, Joonmyoung; Bourim, El Mostafa; Lee, Wootae Applied Physics Letters, Vol. 97, Issue 17 https://doi.org/10.1063/1.3491803	journal	October 2010
Highly uniform and reliable resistance switching properties in bilayer WOx/NbOx RRAM devices Sadaf, Sharif Md.; Liu, Xinjun; Son, Myungwoo physica status solidi (a), Vol. 209, Issue 6 https://doi.org/10.1002/pssa.201127659	journal	March 2012
Microstructure, vertical strain control and tunable functionalities in self-assembled, vertically aligned nanocomposite thin films Chen, Aiping; Bi, Zhenxing; Jia, Quanxi Acta Materialia, Vol. 61, Issue 8 https://doi.org/10.1016/j.actamat.2012.09.072	journal	May 2013
Self-Assembled Heteroepitaxial Oxide Nanocomposite Thin Film Structures: Designing Interface-Induced Functionality in Electronic Materials MacManus-Driscoll, Judith L. Advanced Functional Materials, Vol. 20, Issue 13 https://doi.org/10.1002/adfm.201000373	journal	June 2010
Resistive switching and data reliability of epitaxial (Ba,Sr)TiO3 thin films Oligschlaeger, R.; Waser, R.; Meyer, R. Applied Physics Letters, Vol. 88, Issue 4 https://doi.org/10.1063/1.2162860	journal	January 2006
High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm Alibart, Fabien; Gao, Ligang; Hoskins, Brian D. Nanotechnology, Vol. 23, Issue 7 https://doi.org/10.1088/0957-4484/23/7/075201	journal	January 2012
Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory Bai, Yue; Wu, Huaqiang; Wu, Riga Scientific Reports, Vol. 4, Issue 1 https://doi.org/10.1038/srep05780	journal	July 2014
Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament Balatti, S.; Larentis, S.; Gilmer, D. C. Advanced Materials, Vol. 25, Issue 10, p. 1474-1478 https://doi.org/10.1002/adma.201204097	journal	January 2013
Multilevel Resistive Switching in Planar Graphene/SiO ₂ Nanogap Structures He, Congli; Shi, Zhiwen; Zhang, Lianchang ACS Nano, Vol. 6, Issue 5 https://doi.org/10.1021/nn300735s	journal	April 2012
Using binary resistors to achieve multilevel resistive switching in multilayer NiO/Pt nanowire arrays Huang, Yen-Chun; Chen, Po-Yuan; Huang, Kuo-Feng NPG Asia Materials, Vol. 6, Issue 2 https://doi.org/10.1038/am.2013.81	journal	February 2014
Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory Yu, Shimeng; Wu, Yi; Wong, H. -S. Philip Applied Physics Letters, Vol. 98, Issue 10 https://doi.org/10.1063/1.3564883	journal	March 2011
Investigation for Resistive Switching by Controlling Overflow Current in Resistance Change Nonvolatile Memory Ahn, Seung-Eon; Lee, Myoung-Jae; Kang, Bo Soo IEEE Transactions on Nanotechnology, Vol. 11, Issue 6 https://doi.org/10.1109/TNANO.2012.2214788	journal	November 2012
A Defect-Tolerant Computer Architecture: Opportunities for Nanotechnology Heath, J. R. Science, Vol. 280, Issue 5370 https://doi.org/10.1126/science.280.5370.1716	journal	June 1998
The crossbar latch: Logic value storage, restoration, and inversion in crossbar circuits Kuekes, Philip J.; Stewart, Duncan R.; Williams, R. Stanley Journal of Applied Physics, Vol. 97, Issue 3 https://doi.org/10.1063/1.1823026	journal	February 2005
Nanoelectronics from the bottom up Lu, Wei; Lieber, Charles M. Nature Materials, Vol. 6, Issue 11 https://doi.org/10.1038/nmat2028	journal	November 2007
Behavior Characteristics of Nano-Stage According to Hinge Structure Oh, Hyun-Seong; Lee, Sung-Jun; Kim, Yong-Woo Journal of Nanoscience and Nanotechnology, Vol. 7, Issue 11 https://doi.org/10.1166/jnn.2007.013	journal	November 2007
ZnO _{1– x} Nanorod Arrays/ZnO Thin Film Bilayer Structure: From Homojunction Diode and High-Performance Memristor to Complementary 1D1R Application Huang, Chi-Hsin; Huang, Jian-Shiou; Lin, Shih-Ming ACS Nano, Vol. 6, Issue 9 https://doi.org/10.1021/nn303233r	journal	August 2012
High Current Density and Nonlinearity Combination of Selection Device Based on TaO _x /TiO ₂ /TaO _x Structure for One Selector–One Resistor Arrays Lee, Wootae; Park, Jubong; Kim, Seonghyun ACS Nano, Vol. 6, Issue 9 https://doi.org/10.1021/nn3028776	journal	August 2012
Engineering nonlinearity into memristors for passive crossbar applications Joshua Yang, J.; Zhang, M.-X.; Pickett, Matthew D. Applied Physics Letters, Vol. 100, Issue 11, Article No. 113501 https://doi.org/10.1063/1.3693392	journal	March 2012
High-Density Crossbar Arrays Based on a Si Memristive System Jo, Sung Hyun; Kim, Kuk-Hwan; Lu, Wei Nano Letters, Vol. 9, Issue 2 https://doi.org/10.1021/nl8037689	journal	February 2009
A Pt/TiO ₂ /Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays Park, Woo Young; Kim, Gun Hwan; Seok, Jun Yeong Nanotechnology, Vol. 21, Issue 19 https://doi.org/10.1088/0957-4484/21/19/195201	journal	April 2010
RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study Deng, Yexin; Huang, Peng; Chen, Bing IEEE Transactions on Electron Devices, Vol. 60, Issue 2 https://doi.org/10.1109/TED.2012.2231683	journal	February 2013
Crossbar RRAM Arrays: Selector Device Requirements During Read Operation IEEE Transactions on Electron Devices, Vol. 61, Issue 5 https://doi.org/10.1109/TED.2014.2310200	journal	May 2014
Diode-less bilayer oxide (WO _x –NbO _x ) device for cross-point resistive memory applications Liu, Xinjun; Sadaf, Sharif Md; Son, Myungwoo Nanotechnology, Vol. 22, Issue 47 https://doi.org/10.1088/0957-4484/22/47/475702	journal	November 2011
Self-Selective Characteristics of Nanoscale $ \hbox{VO}_{x}$ Devices for High-Density ReRAM Applications Son, Myungwoo; Liu, Xinjun; Sadaf, Sharif Md. IEEE Electron Device Letters, Vol. 33, Issue 5 https://doi.org/10.1109/LED.2012.2188989	journal	May 2012
Resistive Switches and Memories from Silicon Oxide Yao, Jun; Sun, Zhengzong; Zhong, Lin Nano Letters, Vol. 10, Issue 10 https://doi.org/10.1021/nl102255r	journal	October 2010
Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$ Guan, Weihua; Long, Shibing; Liu, Qi IEEE Electron Device Letters, Vol. 29, Issue 5 https://doi.org/10.1109/LED.2008.919602	journal	May 2008
Spatial Redistribution of Oxygen Ions in Oxide Resistance Switching Device after Forming Process Yajima, Takeshi; Fujiwara, Kohei; Nakao, Aiko Japanese Journal of Applied Physics, Vol. 49, Issue 6 https://doi.org/10.1143/JJAP.49.060215	journal	June 2010
Resistance Switching in Electroformed Pt/FeO x/Pt Structures Lee, S. B.; Chae, S. C.; Chang, S. H. Journal of the Korean Physical Society, Vol. 51, Issue 12 https://doi.org/10.3938/jkps.51.96	journal	October 2007
32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory Kim, Gun Hwan; Lee, Jong Ho; Ahn, Youngbae Advanced Functional Materials, Vol. 23, Issue 11 https://doi.org/10.1002/adfm.201202170	journal	October 2012
The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device Liu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming Microelectronics Reliability, Vol. 50, Issue 5 https://doi.org/10.1016/j.microrel.2010.02.006	journal	May 2010
Synthesis and Characterization of Pt/Co–O/Pt Trilayer Exhibiting Large Reproducible Resistance Switching Shima, Hisashi; Takano, Fumiyoshi; Tamai, Yukio Japanese Journal of Applied Physics, Vol. 46, Issue No. 3 https://doi.org/10.1143/JJAP.46.L57	journal	January 2007
Bipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$ Schindler, Christina; Thermadam, Sarath Chandran Puthen; Waser, Rainer IEEE Transactions on Electron Devices, Vol. 54, Issue 10 https://doi.org/10.1109/TED.2007.904402	journal	October 2007
Theory of Fractal Growth Pietronero, L.; Erzan, A.; Evertsz, C. Universalities in Condensed Matter https://doi.org/10.1007/978-3-642-51005-2_24	book	January 1988
Dielectric breakdown I: a review of oxide breakdown : J.P. Verweij and J.H. Klootwijk. Microelectronics Journal, 1996, 611 Microelectronics Reliability, Vol. 37, Issue 8, p. 1276 https://doi.org/10.1016/s0026-2714(97)82485-7	journal	August 1997
Random Circuit Breaker Network Model for Unipolar Resistance Switching Chae, Seung Chul; Lee, Jae Sung; Kim, Sejin Advanced Materials, Vol. 20, Issue 12 https://doi.org/10.1002/adma.200890049	journal	June 2008
Electrochemical metallization memories—fundamentals, applications, prospects Valov, Ilia; Waser, Rainer; Jameson, John R. Nanotechnology, Vol. 22, Issue 28 https://doi.org/10.1088/0957-4484/22/28/289502	journal	June 2011
Scaling behaviors of RESET voltages and currents in unipolar resistance switching Lee, S. B.; Chae, S. C.; Chang, S. H. arXiv https://doi.org/10.48550/arxiv.0810.4043	text	January 2008
Memory effects in complex materials and nanoscale systems Pershin, Yuriy V.; Di Ventra, Massimiliano arXiv https://doi.org/10.48550/arxiv.1011.3053	text	January 2010
A ferroelectric memristor Chanthbouala, André; Garcia, Vincent; Cherifi, Ryan O. arXiv https://doi.org/10.48550/arxiv.1206.3397	text	January 2012
Two opposite hysteresis curves in semiconductors with mobile dopants Lee, Jae Sung; Lee, Shin Buhm; Kahng, Byungnam arXiv https://doi.org/10.48550/arxiv.1208.2476	text	January 2012
Electrical current distribution across a metal-insulator-metal structure during bistable switching Rossel, C.; Meijer, G. I.; Bremaud, D. arXiv https://doi.org/10.48550/arxiv.cond-mat/0104452	text	January 2001

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Self-adaptive STDP-based learning of a spiking neuron with nanocomposite memristive weights Emelyanov, A. V.; Nikiruy, K. E.; Serenko, A. V. Nanotechnology, Vol. 31, Issue 4 https://doi.org/10.1088/1361-6528/ab4a6d	journal	October 2019
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Transport, Magnetic, and Memristive Properties of a Nanogranular (CoFeB) x (LiNbO y )100–x Composite Material Rylkov, V. V.; Nikolaev, S. N.; Demin, V. A. Journal of Experimental and Theoretical Physics, Vol. 126, Issue 3 https://doi.org/10.1134/s1063776118020152	journal	March 2018
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Atomic-Force Microscopy of Resistive Nonstationary Signal Switching in ZrO2(Y) Films Filatov, D. O.; Koryazhkina, M. N.; Antonov, D. A. Technical Physics, Vol. 64, Issue 11 https://doi.org/10.1134/s1063784219110082	journal	November 2019
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