Characterization of electronic structure of periodically strained graphene

Aslani, Marjan; Garner, C. Michael; Kumar, Suhas; Nordlund, Dennis; Pianetta, Piero; Nishi, Yoshio

doi:10.1063/1.4934701

Characterization of electronic structure of periodically strained graphene

Journal Article · Tue Nov 03 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4934701· OSTI ID:1263395

Aslani, Marjan ^[1]; Garner, C. Michael ^[1]; Kumar, Suhas ^[2]; Nordlund, Dennis ^[3]; Pianetta, Piero ^[4]; Nishi, Yoshio ^[1]

Stanford Univ., Stanford, CA (United States)
Stanford Univ., Stanford, CA (United States); Hewlett-Packard Lab., Palo Alto, CA (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)

We induced periodic biaxial tensile strain in polycrystalline graphene by wrapping it over a substrate with repeating pillar-like structures with a periodicity of 600 nm. Using Raman spectroscopy, we determined to have introduced biaxial strains in graphene in the range of 0.4% to 0.7%. Its band structure was characterized using photoemission from valance bands, shifts in the secondary electron emission, and x-ray absorption from the carbon 1s levels to the unoccupied graphene conduction bands. It was observed that relative to unstrained graphene, strained graphene had a higher work function and higher density of states in the valence and conduction bands. Furthermore, we measured the conductivity of the strained and unstrained graphene in response to a gate voltage and correlated the changes in their behavior to the changes in the electronic structure. From these sets of data, we propose a simple band diagram representing graphene with periodic biaxial strain.

View Accepted Manuscript (DOE)

Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC)

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1263395

Alternate ID(s):: OSTI ID: 1224928
OSTI ID: 22486019

Report Number(s):: SLAC-PUB--16639; arXiv:1511.01921

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 107; ISSN APPLAB; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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