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Title: Theory of multiple quantum dot formation in strained-layer heteroepitaxy

Authors:
ORCiD logo;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1261224
Grant/Contract Number:
FG02-07ER46407
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 2; Related Information: CHORUS Timestamp: 2016-12-27 18:11:57; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Du, Lin, and Maroudas, Dimitrios. Theory of multiple quantum dot formation in strained-layer heteroepitaxy. United States: N. p., 2016. Web. doi:10.1063/1.4955409.
Du, Lin, & Maroudas, Dimitrios. Theory of multiple quantum dot formation in strained-layer heteroepitaxy. United States. doi:10.1063/1.4955409.
Du, Lin, and Maroudas, Dimitrios. 2016. "Theory of multiple quantum dot formation in strained-layer heteroepitaxy". United States. doi:10.1063/1.4955409.
@article{osti_1261224,
title = {Theory of multiple quantum dot formation in strained-layer heteroepitaxy},
author = {Du, Lin and Maroudas, Dimitrios},
abstractNote = {},
doi = {10.1063/1.4955409},
journal = {Applied Physics Letters},
number = 2,
volume = 109,
place = {United States},
year = 2016,
month = 7
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4955409

Citation Metrics:
Cited by: 1work
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  • We develop a theory for the experimentally observed formation of multiple quantum dots (QDs) in strained-layer heteroepitaxy based on surface morphological stability analysis of a coherently strained epitaxial thin film on a crystalline substrate. Using a fully nonlinear model of surface morphological evolution that accounts for a wetting potential contribution to the epitaxial film's free energy as well as surface diffusional anisotropy, we demonstrate the formation of multiple QD patterns in self-consistent dynamical simulations of the evolution of the epitaxial film surface perturbed from its planar state. The simulation predictions are supported by weakly nonlinear analysis of the epitaxial filmmore » surface morphological stability. We find that, in addition to the Stranski-Krastanow instability, long-wavelength perturbations from the planar film surface morphology can trigger a nonlinear instability, resulting in the splitting of a single QD into multiple QDs of smaller sizes, and predict the critical wavelength of the film surface perturbation for the onset of the nonlinear tip-splitting instability. The theory provides a fundamental interpretation for the observations of “QD pairs” or “double QDs” and other multiple QDs reported in experimental studies of epitaxial growth of semiconductor strained layers and sets the stage for precise engineering of tunable-size nanoscale surface features in strained-layer heteroepitaxy by exploiting film surface nonlinear, pattern forming phenomena.« less
  • GaAs/sub 1-//sub x/Sb/sub x//GaAs strained-layer multiple quantum wells have been grown by molecular-beam epitaxy and characterized by room-temperature photoreflectance (PR). The PR spectra denote that high-quality layers can be grown in the GaAs/sub 1-//sub x/Sb/sub x//GaAs system. The method for determining the band offset Q/sub v//sub h/ is discussed in this strained-layer system. Based on this treatment and the band-gap formula of bulk GaAs/sub 1-//sub x/Sb/sub x/ a value of the heavy-hole band offset (Q/sub v//sub h/approx.1.7) has been obtained for GaAs/sub 1-//sub x/Sb/sub x//GaAs with x = 0.1 establishing a type-II structure with electrons in GaAs layers and heavymore » and light holes in GaAs/sub 1-//sub x/Sb/sub x/ layers, respectively.« less
  • The authors have studied the effect of high-reflection facet coatings on strained-layer multiple quantum well lasers and made submilliampere-threshold lasers in the 1.5-{mu}m wavelength region with a short cavity and high-reflection-coated facets. As a result of the compressive strain, the threshold current density is loss limited instead of transparency limited. By the use of the step graded-index separate confinement heterostructure to reduce the waveguide loss, a threshold current density of 550 A/cm{sup 2} was measured on 30-{mu}m wide broad area lasers with 1-mm long cavity.
  • By using monomethylsilane (MMS:H{sub 3}Si--CH{sub 3}), we have formed a Si{sub 1-x}C{sub x} interfacial buffer layer for 3C--SiC/Si(100) heteroepitaxy at substrate temperature T{sub f} of as low as 450--650{sup o}C, which is compared to the conventional carbonization temperature of 900{sup o}C or higher. The buffer layer allows the subsequent growth of high-quality single-crystalline 3C--SiC films at 900{sup o}C without formation of voids in the Si substrate at the interface. The grown 3C--SiC films degrade for T{sub f}<450 or >>650{sup o}C. The low processing temperature as well as the suppressed Si outdiffusion can be related to the inclusion of both Si--Hmore » and Si--C bonds within the MMS molecule. {copyright} 2001 American Institute of Physics.« less
  • Data are presented on laser threshold current density and emission wavelength of strained-layer InGaAs-GaAs-Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As single quantum well lasers having confining layer aluminum compositions in the range 0.20{le}{ital x}{le}0.85. A decrease in threshold current density with increasing confining layer composition is related to the increased confinement factor of the waveguide structure. An increase in the laser emission wavelength is observed as a consequence of reduced bandfilling.