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Title: Theory of multiple quantum dot formation in strained-layer heteroepitaxy

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4955409· OSTI ID:1467833

For this, we develop a theory for the experimentally observed formation of multiple quantum dots (QDs) in strained-layer heteroepitaxy based on surface morphological stability analysis of a coherently strained epitaxial thin film on a crystalline substrate. Using a fully nonlinear model of surface morphological evolution that accounts for a wetting potential contribution to the epitaxial film's free energy as well as surface diffusional anisotropy, we demonstrate the formation of multiple QD patterns in self-consistent dynamical simulations of the evolution of the epitaxial film surface perturbed from its planar state. The simulation predictions are supported by weakly nonlinear analysis of the epitaxial film surface morphological stability. We find that, in addition to the Stranski-Krastanow instability, long-wavelength perturbations from the planar film surface morphology can trigger a nonlinear instability, resulting in the splitting of a single QD into multiple QDs of smaller sizes, and predict the critical wavelength of the film surface perturbation for the onset of the nonlinear tip-splitting instability. The theory provides a fundamental interpretation for the observations of “QD pairs” or “double QDs” and other multiple QDs reported in experimental studies of epitaxial growth of semiconductor strained layers and sets the stage for precise engineering of tunable-size nanoscale surface features in strained-layer heteroepitaxy by exploiting film surface nonlinear, pattern forming phenomena.

Research Organization:
Univ. of Massachusetts, Amherst, MA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
Grant/Contract Number:
FG02-07ER46407
OSTI ID:
1467833
Alternate ID(s):
OSTI ID: 1261224
Journal Information:
Applied Physics Letters, Vol. 109, Issue 2; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 18 works
Citation information provided by
Web of Science

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Cited By (6)

Optimization of electrical treatment strategy for surface roughness reduction in conducting thin films journal September 2018
Design of semiconductor surface pits for fabrication of regular arrays of quantum dots and nanorings journal January 2019
On the origin of ‘fuzz’ formation in plasma-facing materials journal July 2019
Modeling of quantum dot and nanoring pattern formation on pit-patterned semiconductor substrates journal July 2018
On the formation of multiple quantum dots inside elongated pits on semiconductor films deposited epitaxially on pit-patterned substrates journal June 2019
Electromigration-guided composition patterns in thin alloy films: A computational study journal August 2020