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Title: Oxygen-free atomic layer deposition of indium sulfide

Abstract

A method for synthesizing an In(III) N,N'-diisopropylacetamidinate precursor including cooling a mixture comprised of diisopropylcarbodiimide and diethyl ether to approximately -30.degree. C., adding methyllithium drop-wise into the mixture, allowing the mixture to warm to room temperature, adding indium(III) chloride as a solid to the mixture to produce a white solid, dissolving the white solid in pentane to form a clear and colorless solution, filtering the mixture over a celite plug, and evaporating the solution under reduced pressure to obtain a solid In(III) N,N'-diisopropylacetamidinate precursor. This precursor has been further used to develop a novel atomic layer deposition technique for indium sulfide by dosing a reactor with the precursor, purging with nitrogen, dosing with dilute hydrogen sulfide, purging again with nitrogen, and repeating these steps to increase growth.

Inventors:
; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1260247
Patent Number(s):
9,382,618
Application Number:
14/335,745
Assignee:
UChicago Argnonne, LLC (Chicago, IL) ANL
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Jul 18
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Martinson, Alex B., Hock, Adam S., McCarthy, Robert, and Weimer, Matthew S. Oxygen-free atomic layer deposition of indium sulfide. United States: N. p., 2016. Web.
Martinson, Alex B., Hock, Adam S., McCarthy, Robert, & Weimer, Matthew S. Oxygen-free atomic layer deposition of indium sulfide. United States.
Martinson, Alex B., Hock, Adam S., McCarthy, Robert, and Weimer, Matthew S. Tue . "Oxygen-free atomic layer deposition of indium sulfide". United States. doi:. https://www.osti.gov/servlets/purl/1260247.
@article{osti_1260247,
title = {Oxygen-free atomic layer deposition of indium sulfide},
author = {Martinson, Alex B. and Hock, Adam S. and McCarthy, Robert and Weimer, Matthew S.},
abstractNote = {A method for synthesizing an In(III) N,N'-diisopropylacetamidinate precursor including cooling a mixture comprised of diisopropylcarbodiimide and diethyl ether to approximately -30.degree. C., adding methyllithium drop-wise into the mixture, allowing the mixture to warm to room temperature, adding indium(III) chloride as a solid to the mixture to produce a white solid, dissolving the white solid in pentane to form a clear and colorless solution, filtering the mixture over a celite plug, and evaporating the solution under reduced pressure to obtain a solid In(III) N,N'-diisopropylacetamidinate precursor. This precursor has been further used to develop a novel atomic layer deposition technique for indium sulfide by dosing a reactor with the precursor, purging with nitrogen, dosing with dilute hydrogen sulfide, purging again with nitrogen, and repeating these steps to increase growth.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 05 00:00:00 EDT 2016},
month = {Tue Jul 05 00:00:00 EDT 2016}
}

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Works referenced in this record:

Atomic layer deposition of zinc oxide and indium sulfide layers for Cu(In,Ga)Se2 thin-film solar cells
journal, May 2001