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Luminescence properties of thick InGaN quantum-wells
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Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography
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Diode Lasers and Photonic Integrated Circuits
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book
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Multidimensional quantum well laser and temperature dependence of its threshold current
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Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation
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Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes
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Auger recombination in low-dimensional structures
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Growth kinetics and optical properties of self-organized GaN quantum dots
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Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
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Coupled strained-layer InGaAs quantum-well improvement of an InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure laser
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Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics
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Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots
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High-power 2.8 W blue-violet laser diode for white light sources
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Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
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High-Efficient and High-Power GaN-Based 405 nm Laser Diodes [高効率・高出力GaN系405nmレーザー]
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Advantages of III-nitride laser diodes in solid-state lighting: Advantages of III-nitride laser diodes in solid-state lighting
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Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis
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Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes
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Theory of laser gain in InGaN quantum dots
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Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition
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Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
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Auger recombination in InGaN measured by photoluminescence
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The potential of III-nitride laser diodes for solid-state lighting: The potential of III-nitride laser diodes for solid-state lighting
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Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes
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Gain comparison in polar and nonpolar\ssty{/} semipolar gallium-nitride-based laser diodes
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Low threshold, large To injection laser emission from (InGa)As quantum dots
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Efficiency droop behaviors of InGaN∕GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness
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Continuous-wave operation and differential gain of InGaN/GaN quantum dot ridge waveguide lasers (λ = 420 nm) on c-plane GaN substrate
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Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates
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Quantum Dot Research: Current State and Future Prospects
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Road to Higher Optical Output Power and Longer Wavelength of GaN Based Semiconductor Laser Diodes
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