III-nitride quantum dots for ultra-efficient solid-state lighting

Wierer, Jr., Jonathan J.; Tansu, Nelson; Fischer, Arthur J.; Tsao, Jeffrey Y.

doi:10.1002/lpor.201500332

III-nitride quantum dots for ultra-efficient solid-state lighting

Journal Article · Mon May 23 00:00:00 EDT 2016 · Laser & Photonics Reviews

DOI:https://doi.org/10.1002/lpor.201500332· OSTI ID:1259487

Wierer, Jr., Jonathan J. ^[1]; Tansu, Nelson ^[1]; Fischer, Arthur J. ^[2]; Tsao, Jeffrey Y. ^[2]

Lehigh Univ., Bethlehem, PA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

III-nitride light-emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III-nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD-based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD-based LEDs achieve higher efficiencies at higher currents because of higher spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. In conclusion, if constructed properly, III-nitride light-emitting devices with QD active regions have the potential to outperform quantum well light-emitting devices, and enable an era of ultra-efficient solidstate lighting.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1259487

Alternate ID(s):: OSTI ID: 1401676

Report Number(s):: SAND2016-4540J; 640185

Journal Information:: Laser & Photonics Reviews, Journal Name: Laser & Photonics Reviews Journal Issue: 4 Vol. 10; ISSN 1863-8880

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

References (49)

Diode Lasers and Photonic Integrated Circuits Coldren, Larry A.; Corzine, Scott W.; Mašanović, Milan L. John Wiley & Sons, Inc. https://doi.org/10.1002/9781118148167	book	January 2012
Toward Smart and Ultra-efficient Solid-State Lighting Tsao, Jeffrey Y.; Crawford, Mary H.; Coltrin, Michael E. Advanced Optical Materials, Vol. 2, Issue 9 https://doi.org/10.1002/adom.201400131	journal	June 2014
Comparison between blue lasers and light-emitting diodes for future solid-state lighting Comparison between blue lasers and light-emitting diodes Wierer, Jonathan J.; Tsao, Jeffrey Y.; Sizov, Dmitry S. Laser & Photonics Reviews, Vol. 7, Issue 6, p. 963-993 https://doi.org/10.1002/lpor.201300048	journal	August 2013
Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates Vampola, Kenneth J.; Fellows, Natalie N.; Masui, Hisashi physica status solidi (a), Vol. 206, Issue 2 https://doi.org/10.1002/pssa.200880411	journal	February 2009
Efficiency droop suppression in InGaN-based blue LEDs: Experiment and numerical modelling Zakheim, D. A.; Pavluchenko, A. S.; Bauman, D. A. physica status solidi (a), Vol. 209, Issue 3 https://doi.org/10.1002/pssa.201100317	journal	January 2012
Advantages of III-nitride laser diodes in solid-state lighting: Advantages of III-nitride laser diodes in solid-state lighting Wierer, Jonathan J.; Tsao, Jeffrey Y. physica status solidi (a), Vol. 212, Issue 5 https://doi.org/10.1002/pssa.201431700	journal	January 2015
Luminescence properties of thick InGaN quantum-wells Laubsch, Ansgar; Bergbauer, Werner; Sabathil, Matthias physica status solidi (c), Vol. 6, Issue S2 https://doi.org/10.1002/pssc.200880893	journal	January 2009
The potential of III-nitride laser diodes for solid-state lighting: The potential of III-nitride laser diodes for solid-state lighting Wierer, Jonathan J.; Tsao, Jeffrey Y.; Sizov, Dmitry S. physica status solidi (c), Vol. 11, Issue 3-4 https://doi.org/10.1002/pssc.201300422	journal	February 2014
High-power 2.8 W blue-violet laser diode for white light sources Hashimoto, Rei; Hung, Hung; Hwang, Jongil Optical Review, Vol. 19, Issue 6 https://doi.org/10.1007/s10043-012-0068-9	journal	November 2012
Auger recombination in low-dimensional structures Abram, R. A.; Kelsall, R. W.; Taylor, R. I. Journal of Physics and Chemistry of Solids, Vol. 49, Issue 6 https://doi.org/10.1016/0022-3697(88)90191-6	journal	January 1988
Formation of uniform 10-nm-scale InGaN quantum dots by selective MOCVD growth and their micro-photoluminescence intensity images Tachibana, K.; Someya, T.; Ishida, S. Journal of Crystal Growth, Vol. 221, Issue 1-4 https://doi.org/10.1016/S0022-0248(00)00781-8	journal	December 2000
Photoelectrochemical etching of epitaxial InGaN thin films: self-limited kinetics and nanostructuring Xiao, Xiaoyin; Fischer, Arthur J.; Coltrin, Michael E. Electrochimica Acta, Vol. 162 https://doi.org/10.1016/j.electacta.2014.10.085	journal	April 2015
Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire Ee, Yik-Khoon; Li, Xiao-Hang; Biser, Jeff Journal of Crystal Growth, Vol. 312, Issue 8 https://doi.org/10.1016/j.jcrysgro.2009.10.029	journal	April 2010
Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics Guo, Wei; Zhang, Meng; Bhattacharya, Pallab Nano Letters, Vol. 11, Issue 4 https://doi.org/10.1021/nl103649d	journal	April 2011
Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots Xiao, Xiaoyin; Fischer, Arthur J.; Wang, George T. Nano Letters, Vol. 14, Issue 10 https://doi.org/10.1021/nl502151k	journal	September 2014
Low threshold, large To injection laser emission from (InGa)As quantum dots Grundmann, M.; Richter, U.; Ustinov, V. M. Electronics Letters, Vol. 30, Issue 17 https://doi.org/10.1049/el:19940939	journal	August 1994
Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition Tachibana, K.; Someya, T.; Arakawa, Y. Applied Physics Letters, Vol. 74, Issue 3 https://doi.org/10.1063/1.123078	journal	January 1999
Discrete energy level separation and the threshold temperature dependence of quantum dot lasers Shchekin, Oleg B.; Park, Gyoungwon; Huffaker, Diana L. Applied Physics Letters, Vol. 77, Issue 4 https://doi.org/10.1063/1.127012	journal	July 2000
High-power AlGaInN flip-chip light-emitting diodes Wierer, J. J.; Steigerwald, D. A.; Krames, M. R. Applied Physics Letters, Vol. 78, Issue 22 https://doi.org/10.1063/1.1374499	journal	May 2001
Coupled strained-layer InGaAs quantum-well improvement of an InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure laser Chung, T.; Walter, G.; Holonyak, N. Applied Physics Letters, Vol. 79, Issue 27 https://doi.org/10.1063/1.1430025	journal	December 2001
Theory of laser gain in InGaN quantum dots Chow, W. W.; Schneider, H. C. Applied Physics Letters, Vol. 81, Issue 14 https://doi.org/10.1063/1.1509476	journal	September 2002
Current injection efficiency of InGaAsN quantum-well lasers Tansu, Nelson; Mawst, Luke J. Journal of Applied Physics, Vol. 97, Issue 5 https://doi.org/10.1063/1.1852697	journal	March 2005
High performance thin-film flip-chip InGaN–GaN light-emitting diodes Shchekin, O. B.; Epler, J. E.; Trottier, T. A. Applied Physics Letters, Vol. 89, Issue 7 https://doi.org/10.1063/1.2337007	journal	August 2006
Auger recombination in InGaN measured by photoluminescence Shen, Y. C.; Mueller, G. O.; Watanabe, S. Applied Physics Letters, Vol. 91, Issue 14 https://doi.org/10.1063/1.2785135	journal	October 2007
Efficiency droop behaviors of InGaN∕GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness Li, Y. -L.; Huang, Y. -R.; Lai, Y. -H. Applied Physics Letters, Vol. 91, Issue 18 https://doi.org/10.1063/1.2805197	journal	October 2007
Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2 Gardner, N. F.; Müller, G. O.; Shen, Y. C. Applied Physics Letters, Vol. 91, Issue 24 https://doi.org/10.1063/1.2807272	journal	December 2007
Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis David, Aurélien; Grundmann, Michael J. Applied Physics Letters, Vol. 96, Issue 10 https://doi.org/10.1063/1.3330870	journal	March 2010
InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop Zhang, Meng; Bhattacharya, Pallab; Guo, Wei Applied Physics Letters, Vol. 97, Issue 1 https://doi.org/10.1063/1.3460921	journal	July 2010
Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes David, Aurélien; Grundmann, Michael J. Applied Physics Letters, Vol. 97, Issue 3 https://doi.org/10.1063/1.3462916	journal	July 2010
Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes Kioupakis, Emmanouil; Rinke, Patrick; Delaney, Kris T. Applied Physics Letters, Vol. 98, Issue 16 https://doi.org/10.1063/1.3570656	journal	April 2011
Growth kinetics and optical properties of self-organized GaN quantum dots Widmann, F.; Daudin, B.; Feuillet, G. Journal of Applied Physics, Vol. 83, Issue 12 https://doi.org/10.1063/1.367878	journal	June 1998
Optimal number of quantum wells for blue InGaN/GaN light-emitting diodes Xia, Chang Sheng; Simon Li, Z. M.; Li, Z. Q. Applied Physics Letters, Vol. 100, Issue 26 https://doi.org/10.1063/1.4731625	journal	June 2012
Continuous-wave operation and differential gain of InGaN/GaN quantum dot ridge waveguide lasers (λ = 420 nm) on c-plane GaN substrate Banerjee, Animesh; Frost, Thomas; Stark, Ethan Applied Physics Letters, Vol. 101, Issue 4 https://doi.org/10.1063/1.4738499	journal	July 2012
Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes Kioupakis, Emmanouil; Yan, Qimin; Van de Walle, Chris G. Applied Physics Letters, Vol. 101, Issue 23 https://doi.org/10.1063/1.4769374	journal	December 2012
Efficient and stable laser-driven white lighting Denault, Kristin A.; Cantore, Michael; Nakamura, Shuji AIP Advances, Vol. 3, Issue 7 https://doi.org/10.1063/1.4813837	journal	July 2013
Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation Hurni, Christophe A.; David, Aurelien; Cich, Michael J. Applied Physics Letters, Vol. 106, Issue 3 https://doi.org/10.1063/1.4905873	journal	January 2015
Multidimensional quantum well laser and temperature dependence of its threshold current Arakawa, Y.; Sakaki, H. Applied Physics Letters, Vol. 40, Issue 11 https://doi.org/10.1063/1.92959	journal	June 1982
Quantum Dot Research: Current State and Future Prospects Bukowski, Tracie J.; Simmons, Joseph H. Critical Reviews in Solid State and Materials Sciences, Vol. 27, Issue 3-4 https://doi.org/10.1080/10408430208500496	journal	July 2002
Gain comparison in polar and nonpolar\ssty{/} semipolar gallium-nitride-based laser diodes Melo, T.; Hu, Y-L; Weisbuch, C. Semiconductor Science and Technology, Vol. 27, Issue 2 https://doi.org/10.1088/0268-1242/27/2/024015	journal	January 2012
Universal Size-Dependent Trend in Auger Recombination in Direct-Gap and Indirect-Gap Semiconductor Nanocrystals Robel, István; Gresback, Ryan; Kortshagen, Uwe Physical Review Letters, Vol. 102, Issue 17, Article No. 177404 https://doi.org/10.1103/PhysRevLett.102.177404	journal	May 2009
Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop Iveland, Justin; Martinelli, Lucio; Peretti, Jacques Physical Review Letters, Vol. 110, Issue 17 https://doi.org/10.1103/PhysRevLett.110.177406	journal	April 2013
Tunneling-injection quantum-dot laser: ultrahigh temperature stability Asryan, L. V.; Luryi, S. IEEE Journal of Quantum Electronics, Vol. 37, Issue 7 https://doi.org/10.1109/3.929590	journal	July 2001
Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes Zhao, Hongping; Liu, Guangyu; Zhang, Jing Journal of Display Technology, Vol. 9, Issue 4 https://doi.org/10.1109/JDT.2013.2250252	journal	April 2013
InGaN/GaN Quantum Dot Red $(\lambda=630~{\rm nm})$ Laser Frost, Thomas; Banerjee, Animesh; Sun, Kai IEEE Journal of Quantum Electronics, Vol. 49, Issue 11 https://doi.org/10.1109/JQE.2013.2281062	journal	November 2013
Analysis of temperature-dependent optical gain in GaN-InGaN quantum-well structures Witzigmann, B.; Laino, V.; Luisier, M. IEEE Photonics Technology Letters, Vol. 18, Issue 15 https://doi.org/10.1109/LPT.2006.879565	journal	August 2006
High-speed tunnel-injection quantum well and quantum dot lasers Bhattacharya, Pallab; Zhang, Xiangkun; Yuan, Yahsing Optoelectronics and High-Power Lasers & Applications, SPIE Proceedings https://doi.org/10.1117/12.316722	conference	July 1998
Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography Liu, Guangyu; Zhao, Hongping; Zhang, Jing Nanoscale Research Letters, Vol. 6, Issue 1 https://doi.org/10.1186/1556-276X-6-342	journal	April 2011
High-Efficient and High-Power GaN-Based 405 nm Laser Diodes [高効率・高出力GaN系405nmレーザー] Kuramoto, Kyosuke; Ohno, Akihito; Yamada, Tomoo The Review of Laser Engineering, Vol. 35, Issue 2 https://doi.org/10.2184/lsj.35.69	journal	January 2007
Road to Higher Optical Output Power and Longer Wavelength of GaN Based Semiconductor Laser Diodes Masui, Shingo; Nagahama, Shin-ichi The Review of Laser Engineering, Vol. 41, Issue 11 https://doi.org/10.2184/lsj.41.11_899	journal	January 2013

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