Neutron-irradiation creep of silicon carbide materials beyond the initial transient
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Japan Atomic Energy Agency, Aomori (Japan)
- Kyoto Univ., Kyoto (Japan)
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Irradiation creep beyond the transient regime was investigated for various silicon carbide (SiC) materials. Here, the materials examined included polycrystalline or monocrystalline high-purity SiC, nanopowder sintered SiC, highly crystalline and near-stoichiometric SiC fibers (including Hi-Nicalon Type S, Tyranno SA3, isotopically-controlled Sylramic and Sylramic-iBN fibers), and a Tyranno SA3 fiber–reinforced SiC matrix composite fabricated through a nano-infiltration transient eutectic phase process. Neutron irradiation experiments for bend stress relaxation tests were conducted at irradiation temperatures ranging from 430 to 1180 °C up to 30 dpa with initial bend stresses of up to ~1 GPa for the fibers and ~300 MPa for the other materials. Initial bend stress in the specimens continued to decrease from 1 to 30 dpa. Analysis revealed that (1) the stress exponent of irradiation creep above 1 dpa is approximately unity, (2) the stress normalized creep rate is ~1 × 10–7 [dpa–1 MPa–1] at 430–750 °C for the range of 1–30 dpa for most polycrystalline SiC materials, and (3) the effects on irradiation creep of initial microstructures—such as grain boundary, crystal orientation, and secondary phases—increase with increasing irradiation temperature.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Fusion Energy Sciences (FES); USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC05-00OR22725; C05-00OR22725
- OSTI ID:
- 1256813
- Alternate ID(s):
- OSTI ID: 1325376
- Journal Information:
- Journal of Nuclear Materials, Vol. 478, Issue C; ISSN 0022-3115
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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