Near 1 V Open Circuit Voltage InAs/GaAs Quantum Dot Solar Cells

Bailey, C. G.; Forbes, D. V.; Raffaelle, R. P.; Hubbard, S. M.

doi:10.1063/1.3580765

Near 1 V Open Circuit Voltage InAs/GaAs Quantum Dot Solar Cells

Journal Article · Mon Apr 18 04:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3580765· OSTI ID:1256407

Bailey, C. G.; Forbes, D. V.; Raffaelle, R. P.; Hubbard, S. M.

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC36-08GO28308

OSTI ID:: 1256407

Report Number(s):: NREL/JA-5200-51869

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 98; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

References (17)

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Theoretical and experimental examination of the intermediate-band concept for strain-balanced (In,Ga)As/Ga(As,P) quantum dot solar cells Popescu, Voicu; Bester, Gabriel; Hanna, Mark C. Physical Review B, Vol. 78, Issue 20 https://doi.org/10.1103/PhysRevB.78.205321	journal	November 2008
Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight Guter, Wolfgang; Schöne, Jan; Philipps, Simon P. Applied Physics Letters, Vol. 94, Issue 22 https://doi.org/10.1063/1.3148341	journal	June 2009
Production of Photocurrent due to Intermediate-to-Conduction-Band Transitions: A Demonstration of a Key Operating Principle of the Intermediate-Band Solar Cell Martí, A.; Antolín, E.; Stanley, C. R. Physical Review Letters, Vol. 97, Issue 24 https://doi.org/10.1103/PhysRevLett.97.247701	journal	December 2006
Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage Guimard, Denis; Morihara, Ryo; Bordel, Damien Applied Physics Letters, Vol. 96, Issue 20 https://doi.org/10.1063/1.3427392	journal	May 2010
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Characteristics of InAs/GaNAs strain-compensated quantum dot solar cell Okada, Yoshitaka; Oshima, Ryuji; Takata, Ayami Journal of Applied Physics, Vol. 106, Issue 2 https://doi.org/10.1063/1.3176903	journal	July 2009
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Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels Luque, Antonio; Martí, Antonio Physical Review Letters, Vol. 78, Issue 26 https://doi.org/10.1103/PhysRevLett.78.5014	journal	June 1997
Improved device performance of InAs∕GaAs quantum dot solar cells with GaP strain compensation layers Laghumavarapu, R. B.; El-Emawy, M.; Nuntawong, N. Applied Physics Letters, Vol. 91, Issue 24 https://doi.org/10.1063/1.2816904	journal	December 2007
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Forty three per cent composite split-spectrum concentrator solar cell efficiency Green, Martin A.; Ho-Baillie, Anita Progress in Photovoltaics: Research and Applications, Vol. 18, Issue 1 https://doi.org/10.1002/pip.924	journal	January 2010
Nanostructured photovoltaics for space power Hubbard, Seth M. Journal of Nanophotonics, Vol. 3, Issue 1 https://doi.org/10.1117/1.3266502	journal	January 2009
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Evaluation of strain balancing layer thickness for InAs/GaAs quantum dot arrays using high resolution x-ray diffraction and photoluminescence Bailey, Christopher G.; Hubbard, Seth M.; Forbes, David V. Applied Physics Letters, Vol. 95, Issue 20 https://doi.org/10.1063/1.3264967	journal	November 2009
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