Enhanced thermoelectric properties of n-type NbCoSn half-Heusler by improving phase purity
In this paper, we report the thermoelectric properties of NbCoSn-based n-type half-Heuslers (HHs) that were obtained through arc melting, ball milling, and hot pressing process. With 10% Sb substitution at the Sn site, we obtained enhanced n-type properties with a maximum power factor reaching ~35 μW cm-1 K-2 and figure of merit (ZT) value ~0.6 in NbCoSn0.9Sb0.1. The ZT is doubled compared to the previous report. In addition, the specific power cost ($ W-1) is decreased by ~68% comparing to HfNiSn-based n-type HH because of the elimination of Hf.
- Research Organization:
- Univ. of Houston, TX (United States); Xihua Univ., Chengdu (China)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation of China (NSFC) (China); Youth Science Innovation Program of Sichuan Province (China); Science and Technology Support Program of Sichuan Province (China); Chunhui Program from Education Ministry of China (China); Xihua Univ. (China)
- Contributing Organization:
- Chinese Academy of Sciences (CAS), Beijing (China); Robert Bosch LLC, Cambridge, MA (United States)
- Grant/Contract Number:
- SC0010831; 51372208; 51472207; 51572226; 2015TD0017; 2015GZ0060; Z2014042; SZJJ2013-034; DOE DE-SC0010831
- OSTI ID:
- 1255315
- Alternate ID(s):
- OSTI ID: 1360094; OSTI ID: 1416460
- Journal Information:
- APL Materials, Journal Name: APL Materials Vol. 4 Journal Issue: 10; ISSN 2166-532X
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 49 works
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