Hybridization-Induced Carrier Localization at the C60/ZnO Interface

Kelly, Leah L.; Racke, David A.; Kim, Hyungchul; Ndione, Paul; Sigdel, Ajaya K.; Berry, Joseph J.; Graham, Samuel; Nordlund, Dennis; Monti, Oliver L. A.

doi:10.1002/adma.201503694

Hybridization-Induced Carrier Localization at the C60/ZnO Interface

Journal Article · Wed May 25 04:00:00 EDT 2016 · Advanced Materials

DOI:https://doi.org/10.1002/adma.201503694· OSTI ID:1254922

Kelly, Leah L.; Racke, David A.; Kim, Hyungchul; Ndione, Paul; Sigdel, Ajaya K.; Berry, Joseph J.; Graham, Samuel; Nordlund, Dennis; Monti, Oliver L. A.

Electronic coupling and ground-state charge transfer at the C60/ZnO hybrid interface is shown to localize carriers in the C60 phase. This effect, revealed by resonant X-ray photoemission, arises from interfacial hybridization between C60 and ZnO. Such localization at carrier-selective electrodes and interlayers may lead to severely reduced carrier harvesting efficiencies and increased recombination rates in organic electronic devices.

Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Interface Science: Solar Electric Materials (CISSEM)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

DOE Contract Number:: AC36-08GO28308; SC0001084

OSTI ID:: 1254922

Report Number(s):: NREL/JA-5K00-65818

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Journal Issue: 20 Vol. 28; ISSN 0935-9648

Publisher:: Wiley

Country of Publication:: United States

Language:: English

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14 SOLAR ENERGY
36 MATERIALS SCIENCE
charge transfer
hybrid organic/inorganic interfaces
hybridization
resonant photoemission spectroscopy
ultrafast carrier dynamics

Hybridization-Induced Carrier Localization at the C60/ZnO Interface

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