Intrinsic Point Defects and Complexes in the Quaternary Kesterite Semiconductor Cu2ZnSnS4

Chen, S.; Yang, J. H.; Gong, X. G.; Walsh, A.; Wei, S. H.

doi:10.1103/PhysRevB.81.245204

Intrinsic Point Defects and Complexes in the Quaternary Kesterite Semiconductor Cu2ZnSnS4

Journal Article · Thu Dec 31 23:00:00 EST 2009 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.81.245204· OSTI ID:1253467

Chen, S.; Yang, J. H.; Gong, X. G.; Walsh, A.; Wei, S. H.

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC36-08GO28308

OSTI ID:: 1253467

Report Number(s):: NREL/JA-590-48851

Journal Information:: Physical Review B, Journal Name: Physical Review B Journal Issue: 24 Vol. 81; ISSN 2469-9950

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

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