Strain Enhanced Doping in Semiconductors: Effects of Dopant Size and Charge State

Zhu, J.; Liu, F.; Stingfellow, G. B.; Wei, S. H.

doi:10.1103/PhysRevLett.105.195503

Title: Strain Enhanced Doping in Semiconductors: Effects of Dopant Size and Charge State

Journal Article · Fri Jan 01 00:00:00 EST 2010 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.105.195503· OSTI ID:1253447

Zhu, J.; Liu, F.; Stingfellow, G. B.; Wei, S. H.

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Science, Office of Basic Energy Sciences

DOE Contract Number:: AC36-08GO28308

OSTI ID:: 1253447

Report Number(s):: NREL/JA-590-48799

Journal Information:: Physical Review Letters, Vol. 105, Issue 19; Related Information: Physical Review Letters; ISSN 0031-9007

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

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Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set Kresse, G.; Furthmüller, J. Computational Materials Science, Vol. 6, Issue 1, p. 15-50 https://doi.org/10.1016/0927-0256(96)00008-0	journal	July 1996
New Set of Tetrahedral Covalent Radii Van Vechten, J. A.; Phillips, J. C. Physical Review B, Vol. 2, Issue 6 https://doi.org/10.1103/PhysRevB.2.2160	journal	September 1970
The effect of biaxial strain on impurity diffusion in Si and SiGe Larsen, Arne Nylandsted; Zangenberg, Nikolaj; Fage-Pedersen, Jacob Materials Science and Engineering: B, Vol. 124-125 https://doi.org/10.1016/j.mseb.2005.08.078	journal	December 2005
Simple generic method for predicting the effect of strain on surface diffusion Shu, D. J.; Liu, Feng; Gong, X. G. Physical Review B, Vol. 64, Issue 24 https://doi.org/10.1103/PhysRevB.64.245410	journal	November 2001
Stress effects on impurity solubility in crystalline materials: A general model and density-functional calculations for dopants in silicon Ahn, Chihak; Bennett, Nick; Dunham, Scott T. Physical Review B, Vol. 79, Issue 7 https://doi.org/10.1103/PhysRevB.79.073201	journal	February 2009
Large enhancement of boron solubility in silicon due to biaxial stress Sadigh, Babak; Lenosky, Thomas J.; Caturla, Maria-Jose Applied Physics Letters, Vol. 80, Issue 25 https://doi.org/10.1063/1.1484557	journal	June 2002
Atmospheric In situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised-Extension N-type Metal–Oxide–Semiconductor Field-Effect Transistor Ikuta, Tetsuya; Miyanami, Yuki; Fujita, Shigeru Japanese Journal of Applied Physics, Vol. 46, Issue 4B https://doi.org/10.1143/JJAP.46.1916	journal	April 2007
From ultrasoft pseudopotentials to the projector augmented-wave method Kresse, G.; Joubert, D. Physical Review B, Vol. 59, Issue 3, p. 1758-1775 https://doi.org/10.1103/PhysRevB.59.1758	journal	January 1999
Dual-Surfactant Effect to Enhance $p$ -Type Doping in III-V Semiconductor Thin Films Zhu, J. Y.; Liu, Feng; Stringfellow, G. B. Physical Review Letters, Vol. 101, Issue 19, Article No. 196103 https://doi.org/10.1103/PhysRevLett.101.196103	journal	November 2008
Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium Kresse, G.; Hafner, J. Physical Review B, Vol. 49, Issue 20, p. 14251-14269 https://doi.org/10.1103/PhysRevB.49.14251	journal	May 1994
Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic? Bennett, N. S.; Smith, A. J.; Gwilliam, R. M. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 26, Issue 1 https://doi.org/10.1116/1.2816929	journal	January 2008
Achievement of well conducting wide band-gap semiconductors: Role of solubility and of nonequilibrium impurity incorporation Neumark, G. F. Physical Review Letters, Vol. 62, Issue 15 https://doi.org/10.1103/PhysRevLett.62.1800	journal	April 1989
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