skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells

Authors:
 [1];  [1];  [2];  [2]; ORCiD logo [1]
  1. Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA
  2. NanoPower Research Laboratory, Rochester Institute of Technology, Rochester, New York 14623, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1253224
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 119 Journal Issue: 19; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Sellers, D. G., Chen, E. Y., Polly, S. J., Hubbard, S. M., and Doty, M. F. Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells. United States: N. p., 2016. Web. doi:10.1063/1.4948954.
Sellers, D. G., Chen, E. Y., Polly, S. J., Hubbard, S. M., & Doty, M. F. Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells. United States. doi:10.1063/1.4948954.
Sellers, D. G., Chen, E. Y., Polly, S. J., Hubbard, S. M., and Doty, M. F. Mon . "Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells". United States. doi:10.1063/1.4948954.
@article{osti_1253224,
title = {Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells},
author = {Sellers, D. G. and Chen, E. Y. and Polly, S. J. and Hubbard, S. M. and Doty, M. F.},
abstractNote = {},
doi = {10.1063/1.4948954},
journal = {Journal of Applied Physics},
number = 19,
volume = 119,
place = {United States},
year = {Mon May 16 00:00:00 EDT 2016},
month = {Mon May 16 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4948954

Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
journal, March 1961

  • Shockley, William; Queisser, Hans J.
  • Journal of Applied Physics, Vol. 32, Issue 3, p. 510-519
  • DOI: 10.1063/1.1736034