Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells

Sellers, D. G.; Chen, E. Y.; Polly, S. J.; Hubbard, S. M.; Doty, M. F.

doi:10.1063/1.4948954

Title: Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells

Journal Article · Mon May 16 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4948954· OSTI ID:1253224

Sellers, D. G. ^[1]; Chen, E. Y. ^[1]; Polly, S. J. ^[2]; Hubbard, S. M. ^[2];

^[1]

Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA
NanoPower Research Laboratory, Rochester Institute of Technology, Rochester, New York 14623, USA

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Sponsoring Organization:: USDOE

OSTI ID:: 1253224

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 119 Journal Issue: 19; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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References (28)

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