Raman shifts in electron-irradiated monolayer MoS2

Parkin, William M.; Balan, Adrian; Liang, Liangbo; Das, Paul Masih; Lamparski, Michael; Naylor, Carl H.; Rodríguez-Manzo, Julio A.; Johnson, A. T. Charlie; Meunier, Vincent; Drndic, Marija

doi:10.1021/acsnano.5b07388

Title: Raman shifts in electron-irradiated monolayer MoS₂

Journal Article · Mon Mar 21 00:00:00 EDT 2016 · ACS Nano

DOI:https://doi.org/10.1021/acsnano.5b07388· OSTI ID:1250414

Parkin, William M. ^[1]; Balan, Adrian ^[1]; Liang, Liangbo ^[2]; Das, Paul Masih ^[1]; Lamparski, Michael ^[3]; Naylor, Carl H. ^[1]; Rodríguez-Manzo, Julio A. ^[1]; Johnson, A. T. Charlie ^[1]; Meunier, Vincent ^[3]; Drndic, Marija ^[1]

Univ. of Pennsylvania, Philadelphia, PA (United States)
Rensselaer Polytechnic Inst., Troy, NY (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Rensselaer Polytechnic Inst., Troy, NY (United States)

Here, we report how the presence of electron-beam-induced sulfur vacancies affects first-order Raman modes and correlate the effects with the evolution of the in situ transmission-electron microscopy (TEM) two-terminal conductivity of monolayer MoS₂ under electron irradiation. We observe a redshift in the E Raman peak and a less pronounced blueshift in the A'₁ peak with increasing electron dose. Using energy-dispersive X-ray spectroscopy (EDS), we show that irradiation causes partial removal of sulfur and correlate the dependence of the Raman peak shifts with S vacancy density (a few %), which is confirmed by first-principles density functional theory calculations. In situ device current measurements show exponential decrease in channel current upon irradiation. Our analysis demonstrates that the observed frequency shifts are intrinsic properties of the defective systems and that Raman spectroscopy can be used as a quantitative diagnostic tool to characterize MoS₂-based transport channels.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1250414

Journal Information:: ACS Nano, Vol. 10, Issue 4; ISSN 1936-0851

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 287 works

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References (43)

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712 https://doi.org/10.1038/nnano.2012.193	journal	November 2012
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides Jariwala, Deep; Sangwan, Vinod K.; Lauhon, Lincoln J. ACS Nano, Vol. 8, Issue 2 https://doi.org/10.1021/nn500064s	journal	January 2014
Influence of quantum confinement on the electronic structure of the transition metal sulfide $T$ S $_{2}$ Kuc, A.; Zibouche, N.; Heine, T. Physical Review B, Vol. 83, Issue 24 https://doi.org/10.1103/PhysRevB.83.245213	journal	June 2011
Atomically Thin ${MoS}_{2}$ A New Direct-Gap Semiconductor Mak, Kin Fai; Lee, Changgu; Hone, James Physical Review Letters, Vol. 105, Issue 13, Article No.136805 https://doi.org/10.1103/PhysRevLett.105.136805	journal	September 2010
Single-layer MoS₂ transistors Radisavljevic, B.; Radenovic, A.; Brivio, J. Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150 https://doi.org/10.1038/nnano.2010.279	journal	January 2011
Emerging Photoluminescence in Monolayer MoS₂ Splendiani, Andrea; Sun, Liang; Zhang, Yuanbo Nano Letters, Vol. 10, Issue 4, p. 1271-1275 https://doi.org/10.1021/nl903868w	journal	April 2010
Electroluminescence in Single Layer MoS₂ Sundaram, R. S.; Engel, M.; Lombardo, A. Nano Letters, Vol. 13, Issue 4, p. 1416-1421 https://doi.org/10.1021/nl400516a	journal	March 2013
Synthesis of Large-Area MoS₂ Atomic Layers with Chemical Vapor Deposition Lee, Yi-Hsien; Zhang, Xin-Quan; Zhang, Wenjing Advanced Materials, Vol. 24, Issue 17, p. 2320-2325 https://doi.org/10.1002/adma.201104798	journal	March 2012
Integrated Circuits Based on Bilayer MoS₂ Transistors Wang, Han; Yu, Lili; Lee, Yi-Hsien Nano Letters, Vol. 12, Issue 9, p. 4674-4680 https://doi.org/10.1021/nl302015v	journal	January 2012
Integrated Circuits and Logic Operations Based on Single-Layer MoS ₂ Radisavljevic, Branimir; Whitwick, Michael Brian; Kis, Andras ACS Nano, Vol. 5, Issue 12 https://doi.org/10.1021/nn203715c	journal	November 2011
DNA Base Detection Using a Single-Layer MoS ₂ Farimani, Amir Barati; Min, Kyoungmin; Aluru, Narayana R. ACS Nano, Vol. 8, Issue 8 https://doi.org/10.1021/nn5029295	journal	July 2014
Intrinsic Structural Defects in Monolayer Molybdenum Disulfide Zhou, Wu; Zou, Xiaolong; Najmaei, Sina Nano Letters, Vol. 13, Issue 6, p. 2615-2622 https://doi.org/10.1021/nl4007479	journal	May 2013
Defect-Dominated Doping and Contact Resistance in MoS ₂ McDonnell, Stephen; Addou, Rafik; Buie, Creighton ACS Nano, Vol. 8, Issue 3 https://doi.org/10.1021/nn500044q	journal	February 2014
Impact of intrinsic atomic defects on the electronic structure of MoS ₂ monolayers Kc, Santosh; Longo, Roberto C.; Addou, Rafik Nanotechnology, Vol. 25, Issue 37 https://doi.org/10.1088/0957-4484/25/37/375703	journal	August 2014
Seeded growth of highly crystalline molybdenum disulphide monolayers at controlled locations Han, Gang Hee; Kybert, Nicholas J.; Naylor, Carl H. Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms7128	journal	January 2015
Sub-10 nm Device Fabrication in a Transmission Electron Microscope Fischbein, Michael D.; Drndić, Marija Nano Letters, Vol. 7, Issue 5 https://doi.org/10.1021/nl0703626	journal	May 2007
First-principles Raman spectra of MoS2, WS2 and their heterostructures Liang, Liangbo; Meunier, Vincent Nanoscale, Vol. 6, Issue 10 https://doi.org/10.1039/c3nr06906k	journal	January 2014
Anomalous Lattice Vibrations of Single- and Few-Layer MoS ₂ Lee, Changgu; Yan, Hugen; Brus, Louis E. ACS Nano, Vol. 4, Issue 5 https://doi.org/10.1021/nn1003937	journal	March 2010
From Bulk to Monolayer MoS2: Evolution of Raman Scattering Li, Hong; Zhang, Qing; Yap, Chin Chong Ray Advanced Functional Materials, Vol. 22, Issue 7 https://doi.org/10.1002/adfm.201102111	journal	January 2012
Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping Komsa, Hannu-Pekka; Kotakoski, Jani; Kurasch, Simon Physical Review Letters, Vol. 109, Issue 3 https://doi.org/10.1103/PhysRevLett.109.035503	journal	July 2012
From point to extended defects in two-dimensional MoS $_{2}$ : Evolution of atomic structure under electron irradiation Komsa, Hannu-Pekka; Kurasch, Simon; Lehtinen, Ossi Physical Review B, Vol. 88, Issue 3 https://doi.org/10.1103/PhysRevB.88.035301	journal	July 2013
Accurate Measurement of Electron Beam Induced Displacement Cross Sections for Single-Layer Graphene Meyer, Jannik C.; Eder, Franz; Kurasch, Simon Physical Review Letters, Vol. 108, Issue 19 https://doi.org/10.1103/PhysRevLett.108.196102	journal	May 2012
Exploring atomic defects in molybdenum disulphide monolayers Hong, Jinhua; Hu, Zhixin; Probert, Matt Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms7293	journal	February 2015
Effect of disorder on Raman scattering of single-layer $Mo S_{2}$ Mignuzzi, Sandro; Pollard, Andrew J.; Bonini, Nicola Physical Review B, Vol. 91, Issue 19 https://doi.org/10.1103/PhysRevB.91.195411	journal	May 2015
The origin of specimen contamination in the electron microscope Ennos, A. E. British Journal of Applied Physics, Vol. 4, Issue 4 https://doi.org/10.1088/0508-3443/4/4/302	journal	April 1953
The sources of electron-induced contamination in kinetic vacuum systems Ennos, A. E. British Journal of Applied Physics, Vol. 5, Issue 1 https://doi.org/10.1088/0508-3443/5/1/307	journal	January 1954
Correlations between ionization radiation damage and charging effects in transmission electron microscopy Cazaux, J. Ultramicroscopy, Vol. 60, Issue 3 https://doi.org/10.1016/0304-3991(95)00077-1	journal	October 1995
Symmetry-dependent phonon renormalization in monolayer MoS $_{2}$ transistor Chakraborty, Biswanath; Bera, Achintya; Muthu, D. V. S. Physical Review B, Vol. 85, Issue 16 https://doi.org/10.1103/PhysRevB.85.161403	journal	April 2012
Atomic Healing of Defects in Transition Metal Dichalcogenides Lu, Junpeng; Carvalho, Alexandra; Chan, Xinhui Kim Nano Letters, Vol. 15, Issue 5 https://doi.org/10.1021/acs.nanolett.5b00952	journal	April 2015
Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS ₂ Kim, In Soo; Sangwan, Vinod K.; Jariwala, Deep ACS Nano, Vol. 8, Issue 10 https://doi.org/10.1021/nn503988x	journal	September 2014
Hopping transport through defect-induced localized states in molybdenum disulphide Qiu, Hao; Xu, Tao; Wang, Zilu Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms3642	journal	October 2013
Defect-induced conductivity anisotropy in MoS $_{2}$ monolayers Ghorbani-Asl, Mahdi; Enyashin, Andrey N.; Kuc, Agnieszka Physical Review B, Vol. 88, Issue 24 https://doi.org/10.1103/PhysRevB.88.245440	journal	December 2013
Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers Najmaei, Sina; Liu, Zheng; Zhou, Wu Nature Materials, Vol. 12, Issue 8, p. 754-759 https://doi.org/10.1038/nmat3673	journal	June 2013
Baseline correction using adaptive iteratively reweighted penalized least squares Zhang, Zhi-Min; Chen, Shan; Liang, Yi-Zeng The Analyst, Vol. 135, Issue 5 https://doi.org/10.1039/b922045c	journal	January 2010
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Kresse, G.; Furthmüller, J. Physical Review B, Vol. 54, Issue 16, p. 11169-11186 https://doi.org/10.1103/PhysRevB.54.11169	journal	October 1996
Interlayer Breathing and Shear Modes in Few-Trilayer MoS ₂ and WSe ₂ Zhao, Yanyuan; Luo, Xin; Li, Hai Nano Letters, Vol. 13, Issue 3 https://doi.org/10.1021/nl304169w	journal	February 2013
Probing the Interlayer Coupling of Twisted Bilayer MoS ₂ Using Photoluminescence Spectroscopy Huang, Shengxi; Ling, Xi; Liang, Liangbo Nano Letters, Vol. 14, Issue 10 https://doi.org/10.1021/nl5014597	journal	September 2014
Phonons in single-layer and few-layer MoS $_{2}$ and WS $_{2}$ Molina-Sánchez, A.; Wirtz, L. Physical Review B, Vol. 84, Issue 15 https://doi.org/10.1103/PhysRevB.84.155413	journal	October 2011
Low-Frequency Raman Fingerprints of Two-Dimensional Metal Dichalcogenide Layer Stacking Configurations Puretzky, Alexander A.; Liang, Liangbo; Li, Xufan ACS Nano, Vol. 9, Issue 6 https://doi.org/10.1021/acsnano.5b01884	journal	May 2015
Special points for Brillouin-zone integrations Monkhorst, Hendrik J.; Pack, James D. Physical Review B, Vol. 13, Issue 12, p. 5188-5192 https://doi.org/10.1103/PhysRevB.13.5188	journal	June 1976
First-principles calculations of the ferroelastic transition between rutile-type and ${CaCl}_{2}$ -type ${SiO}_{2}$ at high pressures Togo, Atsushi; Oba, Fumiyasu; Tanaka, Isao Physical Review B, Vol. 78, Issue 13 https://doi.org/10.1103/PhysRevB.78.134106	journal	October 2008
Low-Frequency Interlayer Breathing Modes in Few-Layer Black Phosphorus Ling, Xi; Liang, Liangbo; Huang, Shengxi Nano Letters, Vol. 15, Issue 6 https://doi.org/10.1021/acs.nanolett.5b01117	journal	May 2015
A Supernodal Approach to Sparse Partial Pivoting Demmel, James W.; Eisenstat, Stanley C.; Gilbert, John R. SIAM Journal on Matrix Analysis and Applications, Vol. 20, Issue 3 https://doi.org/10.1137/S0895479895291765	journal	January 1999

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77 NANOSCIENCE AND NANOTECHNOLOGY
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
MoS2
two-dimensional material
Raman
in situ transmission electron microscopy
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Title: Raman shifts in electron-irradiated monolayer MoS2

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Title: Raman shifts in electron-irradiated monolayer MoS₂