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Title: A kinetic model for stress generation in thin films grown from energetic vapor fluxes

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4946039· OSTI ID:1470756
 [1];  [1];  [2]; ORCiD logo [3]; ORCiD logo [3];  [2]
  1. Brown Univ., Providence, RI (United States). School of Engineering
  2. Univ. of Poitiers and National School of Mechanics and Aerotechnics (ENSMA), CNRS, Chasseneuil-du-Poitou (France). Inst. P (Pprime) and Dept. of Physics and Mechanics of Materials
  3. Linkoping Univ. (Sweden). Nanoscale Engineering Division and Dept. of Physics, Chemistry and Biology

We have developed a kinetic model for residual stress generation in thin films grown from energetic vapor fluxes, encountered, e.g., during sputter deposition. This new analytical model considers sub-surface point defects created by atomic peening, along with processes treated in already existing stress models for non-energetic deposition, i.e., thermally activated diffusion processes at the surface and the grain boundary. According to the new model, ballistically induced subsurface defects can get incorporated as excess atoms at the grain boundary, remain trapped in the bulk, or annihilate at the free surface, resulting in a complex dependence of the steady-state stress on the grain size, the growth rate, as well as the energetics of the incoming particle flux. We compare calculations from the model with in situ stress measurements performed on a series of Mo films sputter-deposited at different conditions and having different grain sizes. The model is able to reproduce the observed increase of compressive stress with increasing growth rate, behavior that is the opposite of what is typically seen under non-energetic growth conditions. On a grander scale, this study is a step towards obtaining a comprehensive understanding of stress generation and evolution in vapor deposited polycrystalline thin films.

Research Organization:
Brown Univ., Providence, RI (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0008799
OSTI ID:
1470756
Alternate ID(s):
OSTI ID: 1247217
Journal Information:
Journal of Applied Physics, Vol. 119, Issue 14; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 50 works
Citation information provided by
Web of Science

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Cited By (8)

Effect of an electric field during the deposition of silicon dioxide thin films by plasma enhanced atomic layer deposition: an experimental and computational study journal January 2020
Tutorial: Understanding residual stress in polycrystalline thin films through real-time measurements and physical models journal May 2016
Investigation for the structural stress of SiO 2 thin films and its distribution on the large-wafer created by plasma enhanced chemical vapor deposition journal August 2018
The effect of kinetics on intrinsic stress generation and evolution in sputter-deposited films at conditions of high atomic mobility journal January 2020
Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties journal February 2019
Thin-film coating; historical evolution, conventional deposition technologies, stress-state micro/nano-level measurement/models and prospects projection: a critical review journal November 2019
Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies journal March 2018
Epitaxial growth of Cu(001) thin films onto Si(001) using a single-step HiPIMS process journal May 2017

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