Engineered unique elastic modes at a BaTiO3/2x1-Ge(001) interface
- Yale Univ., New Haven, CT (United States)
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
In this study, the strong interaction at an interface between a substrate and thin film leads to epitaxy and provides a means of inducing structural changes in the epitaxial film. These induced material phases often exhibit technologically relevant electronic, magnetic, and functional properties. The 2 x 1 surface of a Ge(001) substrate applies a unique type of epitaxial constraint on thin films of the perovskite oxide BaTiO3 where a change in bonding and symmetry at the interface leads to a non-bulk-like crystal structure of the BaTiO3. While the complex crystal structure is predicted using first-principles theory, it is further shown that the details of the structure are a consequence of hidden phases found in the bulk elastic response of the BaTiO3 induced by the symmetry of forces exerted by the germanium substrate.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC00112704; AC02-06CH11357; AC02-98CH10886; AC05-00OR22725
- OSTI ID:
- 1246789
- Alternate ID(s):
- OSTI ID: 1240486; OSTI ID: 1334459
- Report Number(s):
- BNL-111940-2016-JA; PRLTAO; R&D Project: 16060; KC0403020
- Journal Information:
- Physical Review Letters, Vol. 116, Issue 10; ISSN 0031-9007
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices
|
journal | July 2019 |
Picoscale materials engineering
|
journal | September 2017 |
Interfacial structure of SrZr x Ti 1− x O 3 films on Ge
|
journal | November 2018 |
Interfacial Structure of SrZr$_{x}$Ti$_{1-x}$O$_3$ films on Ge | text | January 2018 |
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