Hybrid quantum dot-tin disulfide field-effect transistors with improved photocurrent and spectral responsivity

Cotlet, Mircea; Huang, Yuan Zang; Chen, Jia -Shiang; Sutter, Eli A.; Sutter, Peter W.; Nam, Chang -Yong

doi:10.1063/1.4944781

Title: Hybrid quantum dot-tin disulfide field-effect transistors with improved photocurrent and spectral responsivity

Journal Article · Thu Mar 24 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4944781· OSTI ID:1245395

Cotlet, Mircea ^[1]; Huang, Yuan Zang ^[2]; Chen, Jia -Shiang ^[1]; Sutter, Eli A. ^[3]; Sutter, Peter W. ^[3]; Nam, Chang -Yong ^[2]

Brookhaven National Lab. (BNL), Upton, NY (United States); Stony Brook Univ., Stony Brook, NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)
Univ. of Nebraska, Lincoln, NE (United States)

We report an improved photosensitivity in few-layer tin disulfide (SnS₂) field-effect transistors(FETs) following doping with CdSe/ZnS core/shell quantum dots(QDs). The hybrid QD-SnS₂ FET devices achieve more than 500% increase in the photocurrent response compared with the starting SnS₂-only FET device and a spectral responsivity reaching over 650 A/W at 400 nm wavelength. The negligible electrical conductance in a control QD-only FET device suggests that the energy transfer between QDs and SnS₂ is the main mechanism responsible for the sensitization effect, which is consistent with the strong spectral overlap between QDphotoluminescence and SnS₂ optical absorption as well as the large nominal donor-acceptor interspacing between QD core and SnS₂. Furthermore, we also find enhanced charge carrier mobility in hybrid QD-SnS₂ FETs which we attribute to a reduced contact Schottky barrier width due to an elevated background charge carrier density.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC00112704; SC0012704

OSTI ID:: 1245395

Alternate ID(s):: OSTI ID: 1243145

Report Number(s):: BNL-111989-2016-JA; APPLAB; KC0403020

Journal Information:: Applied Physics Letters, Vol. 108, Issue 12; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 4 works

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References (25)

Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids Das, Saptarshi; Robinson, Joshua A.; Dubey, Madan Annual Review of Materials Research, Vol. 45, Issue 1 https://doi.org/10.1146/annurev-matsci-070214-021034	journal	July 2015
Two-dimensional transition metal dichalcogenide (TMD) nanosheets Chhowalla, Manish; Liu, Zhongfan; Zhang, Hua Chemical Society Reviews, Vol. 44, Issue 9 https://doi.org/10.1039/C5CS90037A	journal	January 2015
Chip-integrated ultrafast graphene photodetector with high responsivity Gan, Xuetao; Shiue, Ren-Jye; Gao, Yuanda Nature Photonics, Vol. 7, Issue 11 https://doi.org/10.1038/nphoton.2013.253	journal	September 2013
Layered Graphene/Quantum Dots for Photovoltaic Devices Guo, Chun Xian; Yang, Hong Bin; Sheng, Zhao Min Angewandte Chemie International Edition, Vol. 49, Issue 17, p. 3014-3017 https://doi.org/10.1002/anie.200906291	journal	March 2010
Large, Solution-Processable Graphene Quantum Dots as Light Absorbers for Photovoltaics Yan, Xin; Cui, Xiao; Li, Binsong Nano Letters, Vol. 10, Issue 5 https://doi.org/10.1021/nl101060h	journal	May 2010
Gate-controlled nonvolatile graphene-ferroelectric memory Zheng, Yi; Ni, Guang-Xin; Toh, Chee-Tat Applied Physics Letters, Vol. 94, Issue 16 https://doi.org/10.1063/1.3119215	journal	April 2009
Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors Liu, Leitao; Kumar, S. Bala; Ouyang, Yijian IEEE Transactions on Electron Devices, Vol. 58, Issue 9, p. 3042-3047 https://doi.org/10.1109/TED.2011.2159221	journal	September 2011
Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions Ross, Jason S.; Klement, Philip; Jones, Aaron M. Nature Nanotechnology, Vol. 9, Issue 4 https://doi.org/10.1038/nnano.2014.26	journal	March 2014
Ultrafast graphene photodetector Xia, Fengnian; Mueller, Thomas; Lin, Yu-ming Nature Nanotechnology, Vol. 4, Issue 12, p. 839-843 https://doi.org/10.1038/nnano.2009.292	journal	October 2009
Complete Optical Absorption in Periodically Patterned Graphene Thongrattanasiri, Sukosin; Koppens, Frank H. L.; García de Abajo, F. Javier Physical Review Letters, Vol. 108, Issue 4 https://doi.org/10.1103/PhysRevLett.108.047401	journal	January 2012
Velocity saturation in few-layer MoS ₂ transistor Fiori, Gianluca; Szafranek, Bartholomäus N.; Iannaccone, Giuseppe Applied Physics Letters, Vol. 103, Issue 23 https://doi.org/10.1063/1.4840175	journal	December 2013
How Good Can Monolayer MoS ₂ Transistors Be? Yoon, Youngki; Ganapathi, Kartik; Salahuddin, Sayeef Nano Letters, Vol. 11, Issue 9 https://doi.org/10.1021/nl2018178	journal	September 2011
Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors Peralta, X. G.; Allen, S. J.; Wanke, M. C. Applied Physics Letters, Vol. 81, Issue 9 https://doi.org/10.1063/1.1497433	journal	August 2002
Tin Disulfide—An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics Huang, Yuan; Sutter, Eli; Sadowski, Jerzy T. ACS Nano, Vol. 8, Issue 10 https://doi.org/10.1021/nn504481r	journal	September 2014
Atomically Thin ${MoS}_{2}$ A New Direct-Gap Semiconductor Mak, Kin Fai; Lee, Changgu; Hone, James Physical Review Letters, Vol. 105, Issue 13, Article No.136805 https://doi.org/10.1103/PhysRevLett.105.136805	journal	September 2010
Chemical Vapor Deposition of Thin Crystals of Layered Semiconductor SnS ₂ for Fast Photodetection Application Su, Guoxiong; Hadjiev, Viktor G.; Loya, Phillip E. Nano Letters, Vol. 15, Issue 1 https://doi.org/10.1021/nl503857r	journal	December 2014
Hybrid 2D-0D MoS ₂ -PbS Quantum Dot Photodetectors Kufer, Dominik; Nikitskiy, Ivan; Lasanta, Tania Advanced Materials, Vol. 27, Issue 1 https://doi.org/10.1002/adma.201402471	journal	November 2014
Improved Electrical Conductivity of Graphene Films Integrated with Metal Nanowires Kholmanov, Iskandar N.; Magnuson, Carl W.; Aliev, Ali E. Nano Letters, Vol. 12, Issue 11, p. 5679-5683 https://doi.org/10.1021/nl302870x	journal	October 2012
Graphene/h-BN Moiré superlattice Acta Physica Sinica, Vol. 64, Issue 7 https://doi.org/10.7498/aps.64.077305	journal	January 2015
Energy Transfer from Individual Semiconductor Nanocrystals to Graphene Chen, Zheyuan; Berciaud, Stéphane; Nuckolls, Colin ACS Nano, Vol. 4, Issue 5 https://doi.org/10.1021/nn1005107	journal	March 2010
Reduced Dielectric Screening and Enhanced Energy Transfer in Single- and Few-Layer MoS ₂ Prins, Ferry; Goodman, Aaron J.; Tisdale, William A. Nano Letters, Vol. 14, Issue 11 https://doi.org/10.1021/nl5019386	journal	October 2014
Graphene field-effect transistors with self-aligned gates Farmer, Damon B.; Lin, Yu-Ming; Avouris, Phaedon Applied Physics Letters, Vol. 97, Issue 1 https://doi.org/10.1063/1.3459972	journal	July 2010
Nature of Electronic States in Atomically Thin MoS₂ Field-Effect Transistors Ghatak, Subhamoy; Pal, Atindra Nath; Ghosh, Arindam ACS Nano, Vol. 5, Issue 10, p. 7707-7712 https://doi.org/10.1021/nn202852j	journal	October 2011
Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors Li, Song-Lin; Wakabayashi, Katsunori; Xu, Yong Nano Letters, Vol. 13, Issue 8 https://doi.org/10.1021/nl4010783	journal	July 2013
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform Cui, Xu; Lee, Gwan-Hyoung; Kim, Young Duck Nature Nanotechnology, Vol. 10, Issue 6 https://doi.org/10.1038/nnano.2015.70	journal	April 2015

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Locally Gated SnS2/hBN Thin Film Transistors with a Broadband Photoresponse Chu, Dongil; Pak, Sang Woo; Kim, Eun Kyu Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-018-28765-4	journal	July 2018
A SnS ₂ -based photomemristor driven by sun Dragoman, Mircea; Batiri, Mihail; Dinescu, Adrian Journal of Applied Physics, Vol. 123, Issue 2 https://doi.org/10.1063/1.5001275	journal	January 2018
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