Modification of Conductive Channels in TaOx Memristors Using Focused Ion Beam Irradiations.
Conference
·
OSTI ID:1242736
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1242736
- Report Number(s):
- SAND2014-20122C; 547448
- Resource Relation:
- Conference: Proposed for presentation at the Fall MRS Meeting and Exhibit held December 1-5, 2014 in Boston, MA.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Localization of Conductive Filaments in TaOx Memristor using Focused Ion Beam Irradiation.
Application of Focused Ion Beam Irradiations to Create Electroforming-Free TaOx Memristors.
Controlled irradiation of TaOx memristive devices using a focused ion beam for modification of device properties.
Conference
·
Thu May 01 00:00:00 EDT 2014
·
OSTI ID:1242736
+3 more
Application of Focused Ion Beam Irradiations to Create Electroforming-Free TaOx Memristors.
Conference
·
Wed Jun 01 00:00:00 EDT 2016
·
OSTI ID:1242736
+2 more
Controlled irradiation of TaOx memristive devices using a focused ion beam for modification of device properties.
Conference
·
Sun Nov 01 00:00:00 EDT 2015
·
OSTI ID:1242736
+2 more