Direct observation of oxygen-vacancy-enhanced polarization in a SrTiO3-buffered ferroelectric BaTiO3 film on GaAs

Qiao, Q.; Zhang, Y.; Contreras-Guerrero, Rocio; Droopad, Ravi; Pantelides, S. T.; Pennycook, Stephen J.; Ogut, Serdar; Klie, Robert F.

doi:10.1063/1.4936159

Direct observation of oxygen-vacancy-enhanced polarization in a SrTiO₃-buffered ferroelectric BaTiO₃ film on GaAs

Journal Article · Mon Nov 16 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4936159· OSTI ID:1240594

Qiao, Q. ^[1]; Zhang, Y. ^[2]; Contreras-Guerrero, Rocio ^[3]; Droopad, Ravi ^[3]; Pantelides, S. T. ^[2]; Pennycook, Stephen J. ^[4]; Ogut, Serdar ^[5]; Klie, Robert F. ^[5]

Univ. of Illinois, Chicago, IL (United States); Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Texas State Univ., San Marcos, TX (United States)
National Univ. of Singapore (Singapore)
Univ. of Illinois, Chicago, IL (United States)

The integration of functional oxide thin-films on compound semiconductors can lead to a class of reconfigurable spin-based optoelectronic devices if defect-free, fully reversible active layers are stabilized. However, previous first-principles calculations predicted that SrTiO₃ thin filmsgrown on Si exhibit pinned ferroelectric behavior that is not switchable, due to the presence of interfacial vacancies. Meanwhile, piezoresponse force microscopy measurements have demonstrated ferroelectricity in BaTiO₃ grown on semiconductor substrates. The presence of interfacial oxygen vacancies in such complex-oxide/semiconductor systems remains unexplored, and their effect on ferroelectricity is controversial. We also use a combination of aberration-corrected scanning transmission electron microscopy and first-principles density functional theory modeling to examine the role of interfacial oxygen vacancies on the ferroelectricpolarization of a BaTiO₃ thin filmgrown on GaAs. Moreover, we demonstrate that interfacial oxygen vacancies enhance the polar discontinuity (and thus the single domain, out-of-plane polarization pinning in BaTiO₃), and propose that the presence of surface charge screening allows the formation of switchable domains.

View Accepted Manuscript (DOE)

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Univ. of California, Berkeley, CA (United States); Vanderbilt Univ., Nashville, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-05CH11231; AC05-00OR22725; FG02-09ER46554

OSTI ID:: 1240594

Alternate ID(s):: OSTI ID: 1226397
OSTI ID: 22486083
OSTI ID: 1265974
OSTI ID: 1597708

Report Number(s):: BNL--111795-2016-JA; KC0201010

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 107; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Epitaxial growth of (111) BaTiO3 thin films on (0002) GaN substrates with SrTiO3/TiN buffer layers Jia, Shasha; Li, Xiaomin; Li, Guanjie Journal of Materials Science: Materials in Electronics, Vol. 30, Issue 10 https://doi.org/10.1007/s10854-019-01310-3	journal	April 2019
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