Local residual stress monitoring of aluminum nitride MEMS using UV micro-Raman spectroscopy

Choi, Sukwon; Griffin, Benjamin A.

doi:10.1088/0960-1317/26/2/025009

Local residual stress monitoring of aluminum nitride MEMS using UV micro-Raman spectroscopy

Journal Article · Tue Jan 05 23:00:00 EST 2016 · Journal of Micromechanics and Microengineering. Structures, Devices and Systems

DOI:https://doi.org/10.1088/0960-1317/26/2/025009· OSTI ID:1239984

Choi, Sukwon ^[1]; Griffin, Benjamin A. ^[2]

The Pennsylvania State Univ., University Park, PA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Localized stress variation in aluminum nitride (AlN) sputtered on patterned metallization has been monitored through the use of UV micro-Raman spectroscopy. This technique utilizing 325 nm laser excitation allows detection of the AlN E2(high) phonon mode in the presence of metal electrodes beneath the AlN layer with a high spatial resolution of less than 400 nm. The AlN film stress shifted 400 MPa from regions where AlN was deposited over a bottom metal electrode versus silicon dioxide. Thus, across wafer stress variations were also investigated showing that wafer level stress metrology, for example using wafer curvature measurements, introduces large uncertainties for predicting the impact of AlN residual stress on the device performance.

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1239984

Alternate ID(s):: OSTI ID: 22508841

Report Number(s):: SAND--2015-10886J; 617639

Journal Information:: Journal of Micromechanics and Microengineering. Structures, Devices and Systems, Journal Name: Journal of Micromechanics and Microengineering. Structures, Devices and Systems Journal Issue: 2 Vol. 26; ISSN 0960-1317

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Piezoelectric transducers
Raman scattering
aluminum nitride
microelectromechanical systems
stress measurement

Local residual stress monitoring of aluminum nitride MEMS using UV micro-Raman spectroscopy

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