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Title: 2D and 3D all dielectric metamaterials made from III-V semiconductors.

Abstract

Abstract not provided.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1239357
Report Number(s):
SAND2016-0861C
618986
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the CLEO 2016 in San Jose.
Country of Publication:
United States
Language:
English

Citation Formats

Liu, Sheng, Brener, Igal, Reno, John L., Sinclair, Michael B., and Keeler, Gordon Arthur. 2D and 3D all dielectric metamaterials made from III-V semiconductors.. United States: N. p., 2016. Web. doi:10.1364/CLEO_QELS.2016.FTh3D.5.
Liu, Sheng, Brener, Igal, Reno, John L., Sinclair, Michael B., & Keeler, Gordon Arthur. 2D and 3D all dielectric metamaterials made from III-V semiconductors.. United States. doi:10.1364/CLEO_QELS.2016.FTh3D.5.
Liu, Sheng, Brener, Igal, Reno, John L., Sinclair, Michael B., and Keeler, Gordon Arthur. Mon . "2D and 3D all dielectric metamaterials made from III-V semiconductors.". United States. doi:10.1364/CLEO_QELS.2016.FTh3D.5. https://www.osti.gov/servlets/purl/1239357.
@article{osti_1239357,
title = {2D and 3D all dielectric metamaterials made from III-V semiconductors.},
author = {Liu, Sheng and Brener, Igal and Reno, John L. and Sinclair, Michael B. and Keeler, Gordon Arthur},
abstractNote = {Abstract not provided.},
doi = {10.1364/CLEO_QELS.2016.FTh3D.5},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Feb 01 00:00:00 EST 2016},
month = {Mon Feb 01 00:00:00 EST 2016}
}

Conference:
Other availability
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