On the thermal stability of physical vapor deposited oxide-hardened nanocrystalline gold thin films

Argibay, Nicolas; Mogonye, J. E.; Michael, Joseph R.; Goeke, Ronald S.; Kotula, Paul G.; Scharf, T. W.; Dugger, Michael Thomas; Prasad, Somuri V.

doi:10.1063/1.4915922

On the thermal stability of physical vapor deposited oxide-hardened nanocrystalline gold thin films

Journal Article · Wed Apr 08 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4915922· OSTI ID:1237469

Argibay, Nicolas ^[1]; Mogonye, J. E. ^[1]; Michael, Joseph R. ^[1]; Goeke, Ronald S. ^[1]; Kotula, Paul G. ^[1]; Scharf, T. W. ^[1]; Dugger, Michael Thomas ^[1]; Prasad, Somuri V. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

We describe a correlation between electrical resistivity and grain size for PVD synthesized polycrystalline oxide-hardened metal-matrix thin films in oxide-dilute (<5 vol. % oxide phase) compositions. The correlation is based on the Mayadas-Shatzkes (M-S) electron scattering model, predictive of grain size evolution as a function of composition in the oxide-dilute regime for 2 μm thick Au-ZnO films. We describe a technique to investigate grain boundary (GB) mobility and the thermal stability of GBs based on in situelectrical resistivity measurements during annealing experiments, interpreted using a combination of the M-S model and the Michels et al. model describing solute drag stabilized grain growth kinetics. Using this technique, activation energy and pre-exponential Arrhenius parameter values of E_a = 21.6 kJ/mol and A_o = 2.3 × 10^-17 m²/s for Au-1 vol. % ZnO and E_a =12.7 kJ/mol and A_o = 3.1 × 10^-18 m²/s for Au-2 vol.% ZnO were determined. In the oxide-dilute regime, the grain size reduction of the Au matrix yielded a maximum hardness of 2.6 GPa for 5 vol. % ZnO. A combined model including percolation behavior and grain refinement is presented that accurately describes the composition dependent change in electrical resistivity throughout the entire composition range for Au-ZnO thin films. As a result, the proposed correlations are supported by microstructural characterization using transmission electron microscopy and electron diffraction mapping for grain size determination.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1237469

Alternate ID(s):: OSTI ID: 1228212
OSTI ID: 22402849

Report Number(s):: SAND--2015-1707J; 579736

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 14 Vol. 117; ISSN JAPIAU; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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