Impact of the modulation doping layer on the ν = 5/2 anisotropy

Shi, X.; Pan, W.; Baldwin, K. W.; West, K. W.; Pfeiffer, L. N.; Tsui, D. C.

doi:10.1103/PhysRevB.91.125308

Impact of the modulation doping layer on the ν = 5/2 anisotropy

Journal Article · Mon Mar 30 00:00:00 EDT 2015 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.91.125308· OSTI ID:1237354

Shi, X. ^[1]; Pan, W. ^[1]; Baldwin, K. W. ^[2]; West, K. W. ^[2]; Pfeiffer, L. N. ^[2]; Tsui, D. C. ^[2]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Princeton Univ., Princeton, NJ (United States)

We have carried out a systematic study of the tilted magnetic field induced anisotropy at the Landau level filling factor ν = 5/2 in a series of high quality GaAs quantum wells, where the setback distance (d) between the modulation doping layer and the GaAs quantum well is varied from 33 to 164 nm. We have observed that in the sample of the smallest d, electronic transport is anisotropic when the in-plane magnetic field (B_ip) is parallel to the [1–10] crystallographic direction, but remains more or less isotropic when B_ip // [110]. In contrast, in the sample of largest d, electronic transport is anisotropic in both crystallographic directions. Lastly, our results clearly show that the modulation doping layer plays an important role in the tilted field induced ν = 5/2 anisotropy.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1237354

Alternate ID(s):: OSTI ID: 1181149

Report Number(s):: SAND--2015-20725J; 555992

Journal Information:: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 12 Vol. 91; ISSN 1098-0121; ISSN PRBMDO

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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