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First-principles study of roles of Cu and Cl in polycrystalline CdTe

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4940722· OSTI ID:1237018
 [1];  [2];  [3];  [3];  [4]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States); Arizona State University
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States); Soochow Univ., Suzhou (China)
  3. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  4. National Renewable Energy Lab. (NREL), Golden, CO (United States); Beijing Computational Science Research Center, Beijing (China)
In this study, Cu and Cl treatments are important processes to achieve high efficiency polycrystalline cadmium telluride (CdTe) solar cells, thus it will be beneficial to understand the roles they play in both bulk CdTe and CdTe grain boundaries (GBs). Using first-principles calculations, we systematically study Cu and Cl-related defects in bulk CdTe. We find that Cl has only a limited effect on improving p-type doping and too much Cl can induce deep traps in bulk CdTe, whereas Cu can enhance ptype doping of bulk CdTe. In the presence of GBs, we find that, in general, Cl and Cu will prefer to stay at GBs, especially for those with Te-Te wrong bonds, in agreement with experimental observations.
Research Organization:
Arizona State Univ., Tempe, AZ (United States)
Sponsoring Organization:
USDOE; USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Grant/Contract Number:
AC36-08GO28308; EE0006344
OSTI ID:
1237018
Alternate ID(s):
OSTI ID: 1421153
OSTI ID: 1238320
OSTI ID: 22494953
Report Number(s):
DOE-ASU--0006344-8
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 119; ISSN JAPIAU; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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Cited By (12)

Passivating Grain Boundaries in Polycrystalline CdTe journal September 2019
Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping journal September 2018
Self-compensation in chlorine-doped CdTe journal June 2019
Energetics and Electronic Properties of Interstitial Chlorine in CdTe journal October 2018
Point defect engineering in thin-film solar cells journal June 2018
Direct Thermal Growth of Large Scale Cl-doped CdTe Film for Low Voltage High Resolution X-ray Image Sensor journal October 2018
Defect interactions and the role of complexes in the CdTe solar cell absorber journal January 2017
A direct solution deposition approach to CdTe thin films journal January 2016
Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe journal November 2016
High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals journal May 2018
Review on first-principles study of defect properties of CdTe as a solar cell absorber journal July 2016
Assessing the Role of Fluorine in the Performance of Al x Ga 1 − x N / Ga N High-Electron-Mobility Transistors from First-Principles Calculations journal May 2019

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