High-mobility BaSnO 3 grown by oxide molecular beam epitaxy

Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne

doi:10.1063/1.4939657

Title: High-mobility BaSnO ₃ grown by oxide molecular beam epitaxy

Journal Article · Fri Jan 01 00:00:00 EST 2016 · APL Materials

DOI:https://doi.org/10.1063/1.4939657· OSTI ID:1236408

Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne

High-mobility perovskite BaSnO₃ films are of significant interest as newwide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO₃ films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO_x. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO₃. We demonstrate room temperature electron mobilities of 150 cm² V^-1 s^-1 in films grown on PrScO₃. Lastly, the results open up a wide range of opportunities for future electronic devices.

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Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: DEFG02-02ER45994; FG02-02ER45994

OSTI ID:: 1236408

Alternate ID(s):: OSTI ID: 1242969; OSTI ID: 1420607

Journal Information:: APL Materials, Journal Name: APL Materials Vol. 4 Journal Issue: 1; ISSN 2166-532X

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 149 works

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