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Title: Effect of composition on phase formation and morphology in Ti--Si{sub 1{minus}{ital x}}Ge{sub {ital x}} solid phase reactions

Journal Article · · Journal of Materials Research
; ; ;  [1]; ;  [2]
  1. Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202 (United States)
  2. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911 (United States)

The effects of Si{sub 1{minus}{ital x}}Ge{sub {ital x}} alloy composition on the Ti--Si{sub 1{minus}{ital x}}Ge{sub {ital x}} solid phase reaction have been examined. Specifically, effects on the titanium germanosilicide phase formation sequence, C54 Ti(Si{sub 1{minus}{ital y}}Ge{sub {ital y}}), nucleation temperature, and C54 (TiSi{sub 1{minus}{ital y}}Ge{sub {ital y}}), morphology were examined. It was determined that the Ti--Si{sub 1{minus}{ital x}}Ge{sub {ital x}} reaction follows a ``Ti--Si like`` reaction path for Si rich Si{sub 1{minus}{ital x}}Ge{sub {ital x}} alloys and follows a ``Ti--Ge like`` reaction path for Ge rich Si{sub 1{minus}{ital x}}Ge{sub {ital x}} alloys. The coexistence of multiple titanium germanosilicide phases were observed during Ti--Si{sub 1{minus}{ital x}}Ge{sub {ital x}} reactions for Si{sub 1{minus}{ital x}}Ge{sub {ital x}} alloys in an intermediate composition range. The morphology and stability of the resulting C54 germanosilicides were directly correlated to the Ti--Si{sub 1{minus}{ital x}}Ge{sub {ital x}} reaction path. Smooth continuous C54 titanium germanosilicde was formed for samples with Si{sub 1{minus}{ital x}}Ge{sub {ital x}} compositions in the ``Ti--Si-like`` regime. Discontinuous islanded C54 germanosilicides were formed for samples with Si{sub 1{minus}{ital x}}Ge{sub {ital x}} compositions in the mixed phase and ``Ti--Ge-like`` regimes. Using rapid thermal annealing techniques, it was found that the C54 titanium germanosilicides were stable to higher temperatures. This indicated that the morphological degradation occurs after C54 phase formation. The C54 Ti(Si{sub 1{minus}{ital x}}Ge{sub {ital x}}){sub 2} formation temperature was examined as a function of alloy composition and was found to decrease by {approx}70 {degree}C as the composition approached x{approx}0.5. (Abstract Truncated)

Sponsoring Organization:
USDOE
DOE Contract Number:
FG05-89ER45384
OSTI ID:
123626
Journal Information:
Journal of Materials Research, Vol. 10, Issue 11; Other Information: PBD: Nov 1995
Country of Publication:
United States
Language:
English