Enhanced conversion efficiency in wide-bandgap GaNP solar cells
- Univ. of California, San Diego, La Jolla, CA (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
In this study, we demonstrate –2.05 eV dilute nitride GaNP solar cells on GaP substrates for potential use as the top junction in dual-junction integrated cells on Si. By adding a small amount of N into indirect-bandgap GaP, GaNP has several extremely important attributes: a direct-bandgap that is also tunable, and easily attained lattice-match with Si. Our best GaNP solar cell ([N] –1.8%, Eg –2.05 eV) achieves an efficiency of 7.9%, even in the absence of a window layer. This GaNP solar cell's efficiency is 3× higher than the most efficient GaP solar cell to date and higher than other solar cells with similar direct bandgap (InGaP, GaAsP). Through a systematic study of the structural, electrical, and optical properties of the device, efficient broadband optical absorption and enhanced solar cell performance are demonstrated.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000; AC52-06NA25396
- OSTI ID:
- 1236231
- Alternate ID(s):
- OSTI ID: 1420525
- Report Number(s):
- SAND-2015-6907J; APPLAB; 599097
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 15; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Radial direct bandgap p-i-n GaNP microwire solar cells with enhanced short circuit current
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journal | August 2016 |
Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes
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journal | September 2019 |
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