Enhanced conversion efficiency in wide-bandgap GaNP solar cells

Sukrittanon, Supanee; Liu, Ren; Ro, Yun Goo; Pan, Janet L.; Jungjohann, Katherine Leigh; Tu, Charles W.; Dayeh, Shadi A.

doi:10.1063/1.4933317

Enhanced conversion efficiency in wide-bandgap GaNP solar cells

Journal Article · Mon Oct 12 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4933317· OSTI ID:1236231

Sukrittanon, Supanee ^[1]; Liu, Ren ^[1]; Ro, Yun Goo ^[1]; Pan, Janet L. ^[1]; Jungjohann, Katherine Leigh ^[2]; Tu, Charles W. ^[1]; Dayeh, Shadi A. ^[1]

Univ. of California, San Diego, La Jolla, CA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

In this study, we demonstrate –2.05 eV dilute nitride GaNP solar cells on GaP substrates for potential use as the top junction in dual-junction integrated cells on Si. By adding a small amount of N into indirect-bandgap GaP, GaNP has several extremely important attributes: a direct-bandgap that is also tunable, and easily attained lattice-match with Si. Our best GaNP solar cell ([N] –1.8%, E_g –2.05 eV) achieves an efficiency of 7.9%, even in the absence of a window layer. This GaNP solar cell's efficiency is 3× higher than the most efficient GaP solar cell to date and higher than other solar cells with similar direct bandgap (InGaP, GaAsP). Through a systematic study of the structural, electrical, and optical properties of the device, efficient broadband optical absorption and enhanced solar cell performance are demonstrated.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1236231

Alternate ID(s):: OSTI ID: 1420525

Report Number(s):: SAND--2015-6907J; 599097

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 107; ISSN APPLAB; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes Alburaih, H. A.; Albalawi, H.; Henini, M. Semiconductor Science and Technology, Vol. 34, Issue 10 https://doi.org/10.1088/1361-6641/ab3671	journal	September 2019

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