Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection

Chava, Venkata S. N.; Omar, Sabih U.; Brown, Gabriel; Shetu, Shamaita S.; Andrews, J.; Sudarshan, T. S.; Chandrashekhar, M. V. S.

doi:10.1063/1.4940385

Title: Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection

Journal Article · Tue Jan 26 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4940385· OSTI ID:1235974

Chava, Venkata S. N. ^[1]; Omar, Sabih U. ^[1]; Brown, Gabriel ^[1]; Shetu, Shamaita S. ^[1]; Andrews, J. ^[1]; Sudarshan, T. S. ^[1]; Chandrashekhar, M. V. S. ^[1]

Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, USA

View Accepted Manuscript (Publisher)

Cite

Export

Save

Sponsoring Organization:: USDOE

Grant/Contract Number:: 12-3834

OSTI ID:: 1235974

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 108 Journal Issue: 4; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 19 works

Citation information provided by
Web of Science

References (26)

Wide-bandgap semiconductor ultraviolet photodetectors Monroy, E.; Omn s., F.; Calle, F. Semiconductor Science and Technology, Vol. 18, Issue 4 https://doi.org/10.1088/0268-1242/18/4/201	journal	March 2003
Thickness determination of low doped SiC epi-films on highly doped SiC substrates Macmillan, M. F.; Henry, A.; Janzén, E. Journal of Electronic Materials, Vol. 27, Issue 4 https://doi.org/10.1007/s11664-998-0404-9	journal	April 1998
Investigation of the Epitaxial Graphene/p-SiC Heterojunction Anderson, T. J.; Hobart, K. D.; Nyakiti, L. O. IEEE Electron Device Letters, Vol. 33, Issue 11 https://doi.org/10.1109/LED.2012.2211562	journal	November 2012
Minority carrier injection of metal-silicon contacts Yu, A. Y. C.; Snow, E. H. Solid-State Electronics, Vol. 12, Issue 3 https://doi.org/10.1016/0038-1101(69)90027-6	journal	March 1969
Bipolar-mode Schottky contact and applications to high-speed diodes Amemiya, Y.; Mizushima, Y. IEEE Transactions on Electron Devices, Vol. 31, Issue 1, p. 35-42 https://doi.org/10.1109/T-ED.1984.21471	journal	January 1984
Short-wavelength solar-blind detectors-status, prospects, and markets Razeghi, M. Proceedings of the IEEE, Vol. 90, Issue 6 https://doi.org/10.1109/JPROC.2002.1021565	journal	June 2002
The Transistor, A Semi-Conductor Triode Bardeen, J.; Brattain, W. H. Physical Review, Vol. 74, Issue 2 https://doi.org/10.1103/PhysRev.74.230	journal	July 1948
Ultraviolet detector based on graphene/SiC heterojunction Anderson, Travis J.; Hobart, Karl D.; Greenlee, Jordan D. Applied Physics Express, Vol. 8, Issue 4 https://doi.org/10.7567/APEX.8.041301	journal	March 2015
Comparison of SiC Epitaxial Growth from Dichlorosilane and Tetrafluorosilane Precursors Song, H.; Rana, T.; Chandrashekhar, M. V. S. ECS Transactions, Vol. 58, Issue 4 https://doi.org/10.1149/05804.0097ecst	journal	August 2013
Emitter and base transit time of polycrystalline silicon emitter contact bipolar transistors Suzuki, K. IEEE Transactions on Electron Devices, Vol. 38, Issue 11 https://doi.org/10.1109/16.97416	journal	January 1991
4H–SiC ultraviolet avalanche photodetectors with low breakdown voltage and high gain Zhu, Huili; Chen, Xiaping; Cai, Jiafa Solid-State Electronics, Vol. 53, Issue 1 https://doi.org/10.1016/j.sse.2008.09.002	journal	January 2009
Polariton enhanced infrared reflection of epitaxial graphene Daas, B. K.; Daniels, K. M.; Sudarshan, T. S. Journal of Applied Physics, Vol. 110, Issue 11, Article No. 113114 https://doi.org/10.1063/1.3666069	journal	December 2011
Comparison of Epitaxial Graphene Growth on Polar and Nonpolar 6H-SiC Faces: On the Growth of Multilayer Films Daas, B. K.; Omar, Sabih U.; Shetu, S. Crystal Growth & Design, Vol. 12, Issue 7 https://doi.org/10.1021/cg300456v	journal	June 2012
High-performance 4H-SiC-based ultraviolet p-i-n photodetector Chen, Xiaping; Zhu, Huili; Cai, Jiafa Journal of Applied Physics, Vol. 102, Issue 2 https://doi.org/10.1063/1.2747213	journal	July 2007
Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study Coletti, C.; Forti, S.; Principi, A. Physical Review B, Vol. 88, Issue 15, Article No. 155439 https://doi.org/10.1103/PhysRevB.88.155439	journal	October 2013
Visible blind GaN p-i-n photodiodes Walker, D.; Saxler, A.; Kung, P. Applied Physics Letters, Vol. 72, Issue 25 https://doi.org/10.1063/1.121631	journal	June 1998
Epitaxial graphene contact electrode for silicon carbide based ultraviolet photodetector Kus¸demir, Erdi; Özkendir, Dilce; Fırat, Volkan Journal of Physics D: Applied Physics, Vol. 48, Issue 9 https://doi.org/10.1088/0022-3727/48/9/095104	journal	February 2015
Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H–SiC epilayers Kimoto, Tsunenobu; Hiyoshi, Toru; Hayashi, Toshihiko Journal of Applied Physics, Vol. 108, Issue 8 https://doi.org/10.1063/1.3498818	journal	October 2010
Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers Schoen, K. P.; Woodall, J. M.; Cooper, J. A. IEEE Transactions on Electron Devices, Vol. 45, Issue 7 https://doi.org/10.1109/16.701494	journal	July 1998
High gain GaN/AlGaN heterojunction phototransistor Yang, Wei; Nohava, Thomas; Krishnankutty, Subash Applied Physics Letters, Vol. 73, Issue 7 https://doi.org/10.1063/1.122058	journal	August 1998
High-performance GaN p-n junction photodetectors for solar ultraviolet applications Monroy, E.; Muñoz, E.; Sánchez, F. J. Semiconductor Science and Technology, Vol. 13, Issue 9 https://doi.org/10.1088/0268-1242/13/9/013	journal	September 1998
Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å Sridhara, S. G.; Devaty, R. P.; Choyke, W. J. Journal of Applied Physics, Vol. 84, Issue 5 https://doi.org/10.1063/1.368403	journal	September 1998
Fundamentals of Power Semiconductor Devices Baliga, B. Jayant https://doi.org/10.1007/978-0-387-47314-7	book	January 2008
Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible Dawlaty, Jahan M.; Shivaraman, Shriram; Strait, Jared Applied Physics Letters, Vol. 93, Issue 13 https://doi.org/10.1063/1.2990753	journal	September 2008
Avalanche InP/InGaAs heterojunction phototransistor Campbell, J.; Dentai, A.; Qua, G. IEEE Journal of Quantum Electronics, Vol. 19, Issue 6 https://doi.org/10.1109/JQE.1983.1071966	journal	June 1983
On the minority charge storage for an epitaxial Schottky-barrier diode Chuang, C. T. IEEE Transactions on Electron Devices, Vol. 30, Issue 6 https://doi.org/10.1109/T-ED.1983.21192	journal	June 1983

Similar Records

Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection

Journal Article · Mon Jan 25 00:00:00 EST 2016 · Applied Physics Letters · OSTI ID:1235974

Chava, Venkata S. N.,; Omar, Sabih U.; Brown, Gabriel; +4 more

Optically switched graphene/4H-SiC junction bipolar transistor

Patent · Tue May 08 00:00:00 EDT 2018 · OSTI ID:1235974

Chandrashekhar, MVS; Sudarshan, Tangali S.; Omar, Sabih U.; +2 more

Direct experimental evidence for the reversal of carrier type upon hydrogen intercalation in epitaxial graphene/SiC(0001)

Journal Article · Mon Jan 27 00:00:00 EST 2014 · Applied Physics Letters · OSTI ID:1235974

Li, Y. Y.; Li, L.

Title: Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection

Citation Formats

References (26)

Similar Records

Related Subjects