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Self-duality and a Hall-insulator phase near the superconductor-to-insulator transition in indium-oxide films

Journal Article · · Proceedings of the National Academy of Sciences of the United States of America

We combine measurements of the longitudinal ( ρ x x ) and Hall ( ρ x y ) resistivities of disordered 2D amorphous indium-oxide films to study the magnetic-field tuned superconductor-to-insulator transition (H-SIT) in the T 0 limit. At the critical field, H c , the full resistivity tensor is T independent with ρ x x ( H c ) = h / 4 e 2 and ρ x y ( H c ) = 0 within experimental uncertainty in all films (i.e., these appear to be “universal” values); this is strongly suggestive that there is a particle–vortex self-duality at H = H c . The transition separates the (presumably) superconducting state at H < H c from a “Hall-insulator” phase in which ρ x x as T 0 whereas ρ x y approaches a nonzero value smaller than its “classical value” H / n e c ; i.e., 0 < ρ x y < H / n e c . A still higher characteristic magnetic field, H c * > H c , at which the Hall resistance is T independent and roughly equal to its classical value, ρ x y H / n e c , marks an additional crossover to a high-field regime (probably to a Fermi insulator) in which ρ x y > H / n e c and possibly diverges as T 0 . We also highlight a profound analogy between the H-SIT and quantum-Hall liquid-to-insulator transitions (QHIT).

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Organization:
National Science Foundation; National Science Foundation (NSF); USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Grant/Contract Number:
AC02-76SF00515; AC36-08GO28308
OSTI ID:
1235511
Alternate ID(s):
OSTI ID: 1236160
OSTI ID: 2530203
Report Number(s):
NREL/JA--5J00-65695
Journal Information:
Proceedings of the National Academy of Sciences of the United States of America, Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Issue: 2 Vol. 113; ISSN 0027-8424
Publisher:
National Academy of SciencesCopyright Statement
Country of Publication:
United States
Language:
English

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