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Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

Patent ·
OSTI ID:1234679
;
Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.
Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-99GO10337
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Number(s):
9,231,135
Application Number:
14/285,468
OSTI ID:
1234679
Country of Publication:
United States
Language:
English

References (10)

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conference January 2002
Wafer bonding and layer transfer processes for 4-junction high efficiency solar cells conference January 2002
High performance anti-reflection coatings for broadband multi-junction solar cells journal November 2000
Computer modeling of a two-junction, monolithic cascade solar cell journal January 1980

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