First principles calculations of point defect diffusion in CdS buffer layers: Implications for Cu(In,Ga)(Se,S)2 and Cu2ZnSn(Se,S)4-based thin-film photovoltaics
Journal Article
·
· Journal of Applied Physics
- Lawrence Livermore National Laboratory, Livermore, California 94550, USA
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 1234270
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 119 Journal Issue: 2; ISSN 0021-8979
- Publisher:
- American Institute of PhysicsCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 16 works
Citation information provided by
Web of Science
Web of Science
Similar Records
First principles calculations of point defect diffusion in CdS buffer layers: Implications for Cu(In,Ga)(Se,S){sub 2} and Cu{sub 2}ZnSn(Se,S){sub 4}-based thin-film photovoltaics
Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S){sub 2} and Cu{sub 2}ZnSn(Se,S){sub 4} devices
Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S)2 and Cu2ZnSn(Se,S)4 devices
Journal Article
·
Thu Jan 14 00:00:00 EST 2016
· Journal of Applied Physics
·
OSTI ID:1234270
+1 more
Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S){sub 2} and Cu{sub 2}ZnSn(Se,S){sub 4} devices
Journal Article
·
Thu Aug 14 00:00:00 EDT 2014
· Journal of Applied Physics
·
OSTI ID:1234270
Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S)2 and Cu2ZnSn(Se,S)4 devices
Journal Article
·
Fri Aug 08 00:00:00 EDT 2014
· Journal of Applied Physics
·
OSTI ID:1234270