Determination of shape anisotropy in embedded low contrast submonolayer quantum dot structures
- Queens College of CUNY, Queens, NY (United States); CUNY, New York, NY (United States)
- Columbia Univ., New York, NY (United States)
- Queens College of CUNY, Queens, NY (United States)
- CUNY, New York, NY (United States); City College of New York, NY (United States)
We describe a procedure for the morphological characterization of hard-to-image submonolayer quantum dot structures. This procedure employs high resolution x-ray diffraction based reciprocal space mapping, accompanied by rigorous diffraction modeling for precise determination of the morphology of submonolayer quantum dots. Our modelling results and experimental data clearly show that the investigated quantum dots are anisotropically elongated along the [110] orientation. Complementary polarization dependent photoluminescence measurements, combined with our previously reported magneto-photoluminescence data, confirm this conclusion. Here, our formalism enables direct extraction of structural information of complex embedded three-dimensional structures, which, due to their low electron density contrast with respect to the surrounding host matrix, cannot be readily investigated by traditional electron diffraction techniques.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- Grant/Contract Number:
- SC00112704; SC003739; AC02-98CH10886
- OSTI ID:
- 1354325
- Alternate ID(s):
- OSTI ID: 1234094
- Report Number(s):
- BNL-112841-2016-JA
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 25; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Similar Records
Long spin-flip time and large Zeeman splitting of holes in type-II ZnTe/ZnSe submonolayer quantum dots
CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor