skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Substitutional Doping in Nanocrystal Superlattices

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1229419
Report Number(s):
BNL-111495-2015-JA
Journal ID: ‎ISSN 0028-0836
DOE Contract Number:
SC00112704
Resource Type:
Journal Article
Resource Relation:
Journal Name: Nature (London); Journal Volume: 524
Country of Publication:
United States
Language:
English

Citation Formats

Cargnello, M, Johnston-Peck, A, Diroll, B, Wong, E, Datta, B, Damodhar, D, Doan-Nguyen, V, Herzing, A, Kagan, C, and Murray, C. Substitutional Doping in Nanocrystal Superlattices. United States: N. p., 2015. Web. doi:10.1038/nature14872.
Cargnello, M, Johnston-Peck, A, Diroll, B, Wong, E, Datta, B, Damodhar, D, Doan-Nguyen, V, Herzing, A, Kagan, C, & Murray, C. Substitutional Doping in Nanocrystal Superlattices. United States. doi:10.1038/nature14872.
Cargnello, M, Johnston-Peck, A, Diroll, B, Wong, E, Datta, B, Damodhar, D, Doan-Nguyen, V, Herzing, A, Kagan, C, and Murray, C. Wed . "Substitutional Doping in Nanocrystal Superlattices". United States. doi:10.1038/nature14872.
@article{osti_1229419,
title = {Substitutional Doping in Nanocrystal Superlattices},
author = {Cargnello, M and Johnston-Peck, A and Diroll, B and Wong, E and Datta, B and Damodhar, D and Doan-Nguyen, V and Herzing, A and Kagan, C and Murray, C},
abstractNote = {},
doi = {10.1038/nature14872},
journal = {Nature (London)},
number = ,
volume = 524,
place = {United States},
year = {Wed Aug 26 00:00:00 EDT 2015},
month = {Wed Aug 26 00:00:00 EDT 2015}
}
  • Local structures around Mn in In{sub 1{minus}{ital x}}Mn{sub {ital x}}As films grown by molecular-beam epitaxy have been studied by using Mn {ital K}-edge extended x-ray-absorption fine-structure (EXAFS) technique. Substitution of Mn atoms for the In sites is found in samples either grown at low substrate temperatures (near 200{degree}C) or with a low Mn concentration (about 1 at.{percent}). This result represents a significant extension of an earlier EXAFS study and serves as direct experimental evidence for III-V diluted magnetic semiconductors obtained by substitutional doping of Mn impurities in InAs. {copyright} {ital 1996 The American Physical Society.}
  • We studied L1(0) ordered Fe50Pt50-xNdx alloy films, which showed a large enhancement (similar to 18.4% at room temperature and similar to 11.7% at 10 K) of magnetic moment with 6 atomic % of Nd. Analysis of the x-ray magnetic circular dichroism spectra at the Fe L-3,L-2 edges and Nd M-5,M-4 edges in Fe50Pt44Nd6 films indicated a significant contribution of the Nd orbital moment. The origin of the large enhancement of magnetic moment was attributed to the effect of ferromagnetic coupling of the total magnetic moments between Fe and Nd. Density functional theory based first principles calculations supported the experimental observationsmore » of increasing moment due to Nd substitution of Pt.« less
  • A numerical study of electronic transport properties of doped silicene is presented. By means of ab initio calculations a self-consistent scattering potential is derived for boron, nitrogen, aluminium, and phosphorus substitutions in silicene, and the quantum-mechanical Landauer-Büttiker approach is used to evaluate the conductivities of doped silicene ribbons with various impurity concentrations. An individual defect introduces asymmetric electronhole conductivities that depend both on the type of doping and the position of the foreign atom with respect to the edges. Quantum interference effects at zero temperature are modeled to show that randomly distributed defects over 1 mm long and realistically widemore » silicon nanoribbons widen the intrinsic electr onic gap that arises from quantum confinement. Mobility gaps created at low doping rates may lead to greater efficiency in the design of new silicon-based devices, providing the ability for suitable control of silicon ribbons band gap.« less