In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors

Kumar, Suhas; Graves, Catherine E.; Strachan, John Paul; Kilcoyne, A. L. David; Tyliszczak, Tolek; Nishi, Yoshio; Williams, R. Stanley

doi:10.1063/1.4926477

Title: In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors

Journal Article · Wed Jul 15 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4926477· OSTI ID:1228673

Kumar, Suhas ^[1];

^[2]; Strachan, John Paul ^[2]; Kilcoyne, A. L. David ^[3]; Tyliszczak, Tolek ^[3]; Nishi, Yoshio ^[4]; Williams, R. Stanley ^[2]

Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA, Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA
Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA

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Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1228673

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 118 Journal Issue: 3; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 22 works

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References (30)

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