Mechanisms of nonequilibrium electron-phonon coupling and thermal conductance at interfaces

Giri, Ashutosh; Gaskins, John T.; Donovan, Brian F.; Szwejkowski, Chester; Warzoha, Ronald J.; Rodriguez, Mark A.; Ihlefeld, Jon; Hopkins, Patrick E.

doi:10.1063/1.4914867

Mechanisms of nonequilibrium electron-phonon coupling and thermal conductance at interfaces

Journal Article · Fri Mar 13 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4914867· OSTI ID:1228564

Giri, Ashutosh ^[1]; Gaskins, John T. ^[1]; Donovan, Brian F. ^[1]; Szwejkowski, Chester ^[1]; Warzoha, Ronald J. ^[2]; Rodriguez, Mark A. ^[3]; Ihlefeld, Jon ^[3]; Hopkins, Patrick E. ^[1]

Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
Department of Mechanical Engineering, United States Naval Academy, Annapolis, Maryland 21401, USA
Sandia National Laboratories, Albuquerque, New Mexico 87123, USA

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Sponsoring Organization:: USDOE

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1228564

Alternate ID(s):: OSTI ID: 22399269

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 117; ISSN JAPIAU; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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