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Raman spectroscopy measurement of bilayer graphene's twist angle to boron nitride

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4926918· OSTI ID:1226778
 [1];  [1];  [1];  [1];  [1];  [2];  [2];  [1];  [1]
  1. Department of Physics and Astronomy, University of California, Riverside, California 92521, USA
  2. Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

Not Available

Sponsoring Organization:
USDOE
OSTI ID:
1226778
Alternate ID(s):
OSTI ID: 22486353
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 107; ISSN APPLAB; ISSN 0003-6951
Publisher:
American Institute of PhysicsCopyright Statement
Country of Publication:
United States
Language:
English

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Raman Fingerprint of Aligned Graphene/h-BN Superlattices journal October 2013
Direct observation of a widely tunable bandgap in bilayer graphene journal June 2009
Hofstadter’s butterfly and the fractal quantum Hall effect in moiré superlattices journal May 2013
Cloning of Dirac fermions in graphene superlattices journal May 2013
Van der Waals heterostructures journal July 2013
Gate-induced insulating state in bilayer graphene devices journal December 2007
Boron nitride substrates for high-quality graphene electronics journal August 2010
Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics journal December 2012
Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures journal September 2014
Emergence of superlattice Dirac points in graphene on hexagonal boron nitride journal March 2012
Commensurate–incommensurate transition in graphene on hexagonal boron nitride journal April 2014
Intercalation compounds of graphite journal January 2002
Reduction of Fermi velocity in folded graphene observed by resonance Raman spectroscopy journal June 2008
Raman spectra of misoriented bilayer graphene journal September 2008
Raman Spectroscopy Study of Rotated Double-Layer Graphene: Misorientation-Angle Dependence of Electronic Structure journal June 2012
Raman Spectrum of Graphene and Graphene Layers journal October 2006
Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect journal November 2007
Broken-Symmetry States in Doubly Gated Suspended Bilayer Graphene journal October 2010
Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures journal February 2012
Massive Dirac Fermions and Hofstadter Butterfly in a van der Waals Heterostructure journal May 2013
Tunable fractional quantum Hall phases in bilayer graphene journal July 2014

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Raman spectroscopy measurement of bilayer graphene's twist angle to boron nitride
Journal Article · Mon Jul 20 00:00:00 EDT 2015 · Applied Physics Letters · OSTI ID:22486353

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