Suppression of thermoelectric Thomson effect in silicon microwires under large electrical bias and implications for phase-change memory devices

Bakan, Gokhan; Gokirmak, Ali; Silva, Helena

doi:10.1063/1.4904746

Title: Suppression of thermoelectric Thomson effect in silicon microwires under large electrical bias and implications for phase-change memory devices

Journal Article · Sun Dec 21 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4904746· OSTI ID:1226620

^[1]; Gokirmak, Ali ^[2]; Silva, Helena ^[2]

Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut 06269-4157, USA, National Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut 06269-4157, USA

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Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0005038

OSTI ID:: 1226620

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 116 Journal Issue: 23; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 6 works

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References (15)

Extraction of temperature dependent electrical resistivity and thermal conductivity from silicon microwires self-heated to melting temperature Bakan, Gokhan; Adnane, Lhacene; Gokirmak, Ali Journal of Applied Physics, Vol. 112, Issue 6 https://doi.org/10.1063/1.4754795	journal	September 2012
Modeling of Thermoelectric Effects in Phase Change Memory Cells Faraclas, Azer; Bakan, Gokhan; Adnane, L'Hacene IEEE Transactions on Electron Devices, Vol. 61, Issue 2 https://doi.org/10.1109/TED.2013.2296305	journal	February 2014
High-temperature thermoelectric transport at small scales: Thermal generation, transport and recombination of minority carriers Bakan, Gokhan; Khan, Niaz; Silva, Helena Scientific Reports, Vol. 3, Issue 1 https://doi.org/10.1038/srep02724	journal	September 2013
Voltage polarity effects in Ge ₂ Sb ₂ Te ₅ -based phase change memory devices Padilla, Alvaro; Burr, Geoffrey W.; Rettner, Charles T. Journal of Applied Physics, Vol. 110, Issue 5 https://doi.org/10.1063/1.3626047	journal	September 2011
Phase change materials and phase change memory Raoux, Simone; Xiong, Feng; Wuttig, Matthias MRS Bulletin, Vol. 39, Issue 8 https://doi.org/10.1557/mrs.2014.139	journal	August 2014
The impact of hole-induced electromigration on the cycling endurance of phase change memory Lee, M. H.; Cheek, R.; Chen, C. F. 2010 IEEE International Electron Devices Meeting (IEDM), 2010 International Electron Devices Meeting https://doi.org/10.1109/IEDM.2010.5703440	conference	December 2010
Electrical and optical characteristics of vacuum-sealed polysilicon microlamps Mastrangelo, C. H.; Yeh, J. H. -J.; Muller, R. S. IEEE Transactions on Electron Devices, Vol. 39, Issue 6 https://doi.org/10.1109/16.137316	journal	June 1992
Local synthesis of silicon nanowires and carbon nanotubes on microbridges Englander, Ongi; Christensen, Dane; Lin, Liwei Applied Physics Letters, Vol. 82, Issue 26 https://doi.org/10.1063/1.1587262	journal	June 2003
Heterogeneous nanometer-scale Joule and Peltier effects in sub-25 nm thin phase change memory devices Grosse, Kyle L.; Pop, Eric; King, William P. Journal of Applied Physics, Vol. 116, Issue 12 https://doi.org/10.1063/1.4896492	journal	September 2014
Polarity-dependent reversible resistance switching in Ge–Sb–Te phase-change thin films Pandian, Ramanathaswamy; Kooi, Bart J.; Palasantzas, George Applied Physics Letters, Vol. 91, Issue 15 https://doi.org/10.1063/1.2798242	journal	October 2007
Evidence of the Thermo-Electric Thomson Effect and Influence on the Program Conditions and Cell Optimization in Phase-Change Memory Cells Castro, D. Tio; Goux, L.; Hurkx, G. A. M. 2007 IEEE International Electron Devices Meeting https://doi.org/10.1109/IEDM.2007.4418934	conference	December 2007
Self-heating of silicon microwires: Crystallization and thermoelectric effects Bakan, Gokhan; Khan, Niaz; Cywar, Adam Journal of Materials Research, Vol. 26, Issue 9 https://doi.org/10.1557/jmr.2011.32	journal	April 2011
Thermography on a suspended microbridge using confocal Raman scattering Jungen, Alain; Stampfer, Christoph; Hierold, Christofer Applied Physics Letters, Vol. 88, Issue 19 https://doi.org/10.1063/1.2202095	journal	May 2006
Voltage polarity effects in GST-based phase change memory: Physical origins and implications Padilla, A.; Burr, G. W.; Virwani, K. 2010 IEEE International Electron Devices Meeting (IEDM), 2010 International Electron Devices Meeting https://doi.org/10.1109/IEDM.2010.5703444	conference	December 2010
Thermoelectric heating of Ge₂Sb₂Te₅ in phase change memory devices Suh, Dong-Seok; Kim, Cheolkyu; Kim, Kijoon H. P. Applied Physics Letters, Vol. 96, Issue 12 https://doi.org/10.1063/1.3259649	journal	March 2010

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