Perspective: Extremely fine tuning of doping enabled by combinatorial molecular-beam epitaxy
Chemical doping provides an effective method to control the electric properties of complex oxides. However, the state-of-art accuracy in controlling doping is limited to about 1%. This hampers elucidation of the precise doping dependences of physical properties and phenomena of interest, such as quantum phase transitions. Using the combinatorial molecular beam epitaxy, we improve the accuracy in tuning the doping level by two orders of magnitude. We illustrate this novel method by two examples: a systematic investigation of the doping dependence of interface superconductivity, and a study of the competing ground states in the vicinity of the insulator-to-superconductor transition.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC00112704
- OSTI ID:
- 1179642
- Alternate ID(s):
- OSTI ID: 1226035; OSTI ID: 1421208
- Report Number(s):
- BNL-108324-2015-JA
- Journal Information:
- APL Materials, Journal Name: APL Materials Vol. 3 Journal Issue: 6; ISSN 2166-532X
- Publisher:
- American Institute of PhysicsCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 13 works
Citation information provided by
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